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December 2013
Thermal Characteristics
FQP6N80C / FQPF6N80C
N-Channel QFET® MOSFET
800 V, 5.5 A, 2.5 Ω
Description
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
1
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V,
ID = 2.75 A
•Low Gate Charge (Typ. 21 nC)
•Low Crss (Typ. 8 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter FQP6N80C FQPF6N80C /
FQPF6N80CT Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.79 2.45 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W
TO-220
GDSTO-220F
GDS
G
S
D
* Drain current limited by maximum junction temperature.
Symbol Parameter FQP6N80C FQPF6N80C /
FQPF6N80CT Unit
VDSS Drain-Source Voltage 800 V
IDDrain Current - Continuous (TC = 25°C) 5.5 5.5 * A
- Continuous (TC = 100°C) 3.2 3.2 * A
IDM Drain Current - Pulsed (Note 1) 22 22 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 680 mJ
IAR Avalanche Current (Note 1) 5.5 A
EAR Repetitive Avalanche Energy (Note 1) 15.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C) 158 51 W
- Derate above 25°C 1.27 0.41 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.300 °C
Package Marking and Ordering Information
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
2
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
Electrical Characteristics TC = 25°C unless otherwise noted.
Part Number Top Mark Package Reel Size Tape Width Quantity
FQP6N80C
FQP6N80C TO-220 N/A N/A 50 units
Packing Method
Tube
TO-220F Tube N/A N/A 50 units
FQPF6N80C
FQPF6N80C
Tube N/A N/A 50 units
FQPF6N80CT
FQPF6N80CTTO-220F
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 42 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 5.5 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Symbol Parameter Test Conditions Min.Typ.Max.Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA800 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.97 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA
VDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 2.75 A -- 2.1 2.5 Ω
gFS Forward Transconductance VDS = 50 V, ID = 2.75 A -- 5.4 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1010 1310 pF
Coss Output Capacitance -- 90 115 pF
Crss Reverse Transfer Capacitance -- 8 11 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400 V, ID = 5.5 A,
RG = 25 Ω
(Note 4)
-- 26 60 ns
trTurn-On Rise Time -- 65 140 ns
td(off) Turn-Off Delay Time -- 47 105 ns
tfTurn-Off Fall Time -- 44 90 ns
QgTotal Gate Charge VDS = 640 V, ID = 5.5 A,
VGS = 10 V
(Note 4)
-- 21 30 nC
Qgs Gate-Source Charge -- 6 -- nC
Qgd Gate-Drain Charge -- 9 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
-- 615 -- ns
Qrr Reverse Recovery Charge -- 5.4 -- µC
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
3
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
!
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
IDR , Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 5 10 15 20 25
0
2
4
6
8
10
12
VDS = 400V
VDS = 160V
VDS = 640V
※ Note : I
D = 6.0A
VGS , Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
603 912
1
2
3
4
5
6
VGS = 20V
VGS = 10V
※ Note : TJ = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10-1 0101
10-2
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
ID, Drain Current [A]
10
VDS, Drain-Source Voltage [V]
24 810
10-1
100
101
150oC
25oC-55oC
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
ID, Drain Current [A]
6
VGS, Gate-Source Voltage [V]
10-1 0101
0
300
600
900
1200
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
10
VDS, Drain-Source Voltage [V]
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
4
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
Typical Characteristics (Continued)
100101102103
10-2
10-1
100
101
102
1 ms
100 µs
100 ms
DC
10 ms
Operation in This Area
is Limited by R DS(on)
※
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
100101102103
10-2
10-1
100
101
102
10 µs
1 ms
100 µs
100 ms
DC
10 ms
Operation in This Area
is Limited by R DS(on)
※
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP6N80C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF6N80C
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID
= 250 μA
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
T
J, Junction Temperature [o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = 10 V
2. ID
= 3.0 A
RDS(ON) , (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
1
2
3
4
5
6
ID, Drain Current [A]
TC, Case Temperature [℃
]
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
5
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
ZJC(t), Thermal Response [oC/W]
ZJC(t), Thermal Response [oC/W]
10-5 10-4 100101
10-2
10-1
100
※ N ote s :
1. Z θJC
(t) = 2.45 ℃/W M ax.
2. D uty F actor, D = t1/t2
3. T JM - T C = PDM * ZθJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
10-3 10-2 10-1
t1, S qu are W ave P ulse D ura tion [sec]
10-5 10-4 100101
10-2
10-1
100
※ Notes :
1. Z θJC
(t) = 0.79 ℃/W M a x.
2. D u ty Facto r, D =t1/t2
3. T JM - T C = PDM * ZθJC
(t)
sin g le p uls e
D=0.5
0.02
0.2
0.05
0.1
0.01
10-3 10-2 10-1
t1, S q ua re W ave P ulse D u ratio n [sec]
Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP6N80C
Figure 11-2. Transient Thermal Response Curve for FQPF6N80C
t1
PDM
t2
t1
PDM
t2
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
www.fairchildsemi.com
6
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
www.fairchildsemi.com
7
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
8
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
Mechanical Dimensions
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
9
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
10
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Rev. I66
tm
®
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET
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