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2N5886 (#23491)
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Electrical Rating Symbol Min Typ Max Unit
Collector to Emitter Saturation Voltage V 1.00 V
DC Current Gain HFE 20.00 100.00
Maximum Electrical Rating Symbol Min Typ Max Unit
Breakdown Voltage, Collector-Base (Emitter Open) V 80.00 V
Collector Current (dc) I 25.00 A
Collector-Emitter Voltage (Base Open) V 80.00 V
Emitter-Base Voltage (Collector Open) V 5.00 V
Power Dissipation, Total P 200.00 W
This part can be found in the following product categories:
Discretes Transistors BJT( BiPolar Junction Transistor) PNP Transistor
Non-Radiation Hardened Devices Transistors BJT( BiPolar Junction Transistor) NPN Transistor
CE(sat)
BR(CBO)
C
CEO
EBO
T