SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A *High Voltage : BC307 VCEO=-45V. *Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N E K *For Complementary With NPN type BC237/238/239. G J D MAXIMUM RATING (Ta=25) H F F RATING UNIT -50 L BC307 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current BC308 VCBO -30 BC309 -30 BC307 -45 BC308 VCEO -25 BC309 -20 BC307 -5 BC308 VEBO -5 BC309 -5 BC307 -100 BC308 IC -100 BC309 -50 BC307 100 BC308 IE BC309 100 V V 1. COLLECTOR TO-92 V mA mA 50 625 mW Junction Temperature Tj 150 Tstg -55150 Revision No : 0 3 3. EMITTER PC 1994. 3. 2 2 2. BASE Collector Power Dissipation Storage Temperature Range 1 C SYMBOL MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC DIM A B C D E F G H J K L M N 1/2 BC307/8/9 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION MIN. TYP. MAX. UNIT - - -15 nA 120 - 460 120 - 800 180 - 800 - - -0.6 - - -0.6 - - -0.2 - - -1.0 - - -1.0 - - -0.8 -0.55 - -0.7 V VCE=-5V, IC=-10mA, f=100MHz - 200 - MHz VCB=-10V, f=1MHz, IE=0 - - 6.0 pF - 1.0 10 - 1.0 10 - 0.2 3.0 VCB=-50V, IE=0 BC307 DC Current Gain BC308 (Note) hFE VCE=-5V, IC=-2mA BC309 BC307 IC=-100mA, IB=-5mA Collector-Emitter BC308 Saturation Voltage VCE(sat) IC=-10mA, IB=-0.5mA BC309 BC307 V IC=-100mA, IC=-5mA Base-Emitter BC308 Saturation Voltage VBE(sat) IC=-10mA, IB=-0.5mA BC309 Base-Emitter Voltage VBE(ON) Transition Frequency fT Cob Collector Output Capacitance VCE=-5V, IC=-2mA BC307 BC308 Noise Figure VCE=-6V, IC=-0.1mA NF V dB Rg=10k, f=1kHz BC309 NOTE : According to the Value of hFE the BC307, BC308, BC309 are classified as follows. CLASSIFICATION hFE 1994. 3. 2 Revision No : 0 A B C BC307 120220 180460 - BC308 120220 180460 380800 BC309 - 180460 380800 2/2