1994. 3. 2 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC307/8/9
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
·High Voltage : BC307 VCEO=-45V.
·Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)
(VCE=-6V, IC=-0.1mA, f=1kHz).
·For Complementary With NPN type BC237/238/239.
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC307
VCBO
-50
VBC308 -30
BC309 -30
Collector-Emitter Voltage
BC307
VCEO
-45
VBC308 -25
BC309 -20
Emitter-Base Voltage
BC307
VEBO
-5
VBC308 -5
BC309 -5
Collector Current
BC307
IC
-100
mABC308 -100
BC309 -50
Emitter Current
BC307
IE
100
mABC308 100
BC309 50
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
1994. 3. 2 2/2
BC307/8/9
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -15 nA
DC Current Gain
(Note)
BC307
hFE VCE=-5V, IC=-2mA
120 - 460
BC308 120 - 800
BC309 180 - 800
Collector-Emitter
Saturation Voltage
BC307
VCE(sat)
IC=-100mA, IB=-5mA - - -0.6
VBC308 - - -0.6
BC309 IC=-10mA, IB=-0.5mA - - -0.2
Base-Emitter
Saturation Voltage
BC307
VBE(sat)
IC=-100mA, IC=-5mA - - -1.0
VBC308 - - -1.0
BC309 IC=-10mA, IB=-0.5mA - - -0.8
Base-Emitter Voltage VBE(ON) VCE=-5V, IC=-2mA -0.55 - -0.7 V
Transition Frequency fTVCE=-5V, IC=-10mA, f=100MHz - 200 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - - 6.0 pF
Noise Figure
BC307
NF
VCE=-6V, IC=-0.1mA
Rg=10kΩ, f=1kHz
- 1.0 10
dB
BC308 - 1.0 10
BC309 - 0.2 3.0
NOTE : According to the Value of hFE the BC307, BC308, BC309 are classified as follows.
CLASSIFICATION A B C
hFE
BC307 120～220 180～460 -
BC308 120～220 180～460 380～800
BC309 - 180～460 380～800
