© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 7
1Publication Order Number:
BAS16HT1/D
BAS16HT1, SBAS16HT1G
Switching Diode
Features
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR75 Vdc
Peak Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient RqJA 635 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
150
°C
1. FR-4 Minimum Pad.
http://onsemi.com
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
1
CATHODE
2
ANODE
A6 = Specific Device Code
M = Date Code
Device Package Shipping†
ORDERING INFORMATION
BAS16HT1 SOD−323 3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
A6 M
BAS16HT1G SOD−323
(Pb−Free)
3000 /T ape & Reel
SBAS16HT1G SOD−323
(Pb−Free)
3000 / Tape & Reel
BAS16HT1, SBAS16HT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
IR
−
−
−
1.0
50
30
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR) 75 −Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
−
−
−
−
715
855
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD−2.0 pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR −1.75 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr −6.0 ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc,
RL = 500 W)
QS−45 pC
BAS16HT1, SBAS16HT1G
http://onsemi.com
3
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 W
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
TA = -40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
BAS16HT1, SBAS16HT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
HE
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
NOTE 3
D
12bE
A3
A1
A
CNOTE 5
L
1.60
0.063
0.63
0.025
0.83
0.033
2.85
0.112
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81−3−5817−1050
BAS16HT1/D
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