VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 1Document Number: 94288
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Schottky Rectifier, 2 x 10 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 10 A
VR35 V, 45 V
VF at IF0.57 V
IRM max. 15 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 8 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform (per device) 20 A
VRRM 35/45 V
IFRM TC = 135 °C (per leg) 20 A
IFSM tp = 5 μs sine 1060
VF10 Apk, TJ = 125 °C 0.57 V
TJRange - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR2035CTPbF VS-MBR2035CT-N3 VS-MBR2045CTPbF VS-MBR2045CT-N3 UNITS
Maximum DC reverse
voltage VR
35 35 45 45 V
Maximum working peak
reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg IF(AV) TC = 135 °C, rated VR
10
A
per device 20
Peak repetitive forward current per leg IFRM Rated VR, square wave, 20 kHz, TC = 135 °C 20
Non-repetitive peak surge current IFSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated VRRM
applied
1060
Surge applied at rated load condition half wave,
single phase, 60 Hz 150
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 2Document Number: 94288
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
20 A TJ = 25 °C 0.84
V10 A TJ = 125 °C 0.57
20 A 0.72
Maximum instantaneous reverse current IRM (1) TJ = 25 °C Rated DC voltage 0.1 mA
TJ = 125 °C 15
Threshold voltage VF(TO) TJ = TJ maximum 0.354 V
Forward slope resistance rt17.6 m
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 600 pF
Typical series inductance LSMeasured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ- 65 to 150 °C
Maximum storage temperature range TStg - 65 to 175
Maximum thermal resistance,
junction to case per leg RthJC DC operation 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS
Mounting surface, smooth and greased
(only for TO-220) 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum Non-lubricated threads 6 (5) kgf · cm
(lbf·in)
maximum 12 (10)
Marking device Case style TO-220AB MBR2035CT
MBR2045CT
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 3Document Number: 94288
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
0.81.4
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.40.2 0.6 1.0 1.61.2 1.8
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
1
10
100
0.0001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
4540302010
0.01
0.001
5152535
TJ = 150 °C
TJ = 25 °C
TJ = 50 °C
TJ = 100 °C
TJ = 125 °C
TJ = 75 °C
1000
040
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
20
100
5030
10
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20 Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
PDM
t1
t2
100
0.01
10
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 4Document Number: 94288
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
09
IF(AV) - Average Forward Current (A)
Allowable Case Temperature (°C)
130
3
See note (1)
6
150
Square wave (D = 0.50)
Rated VR applied
12 15
120
140
DC
145
135
125
0
012
4
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
2468
2
16
10
6
8
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1410
RMS limit
100 1000
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
100
10 00010
1000
At any rated load condition
and with rated VRRM applied
following surge
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 5Document Number: 94288
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBR2035CTPbF 50 1000 Antistatic plastic tube
VS-MBR2035CT-N3 50 1000 Antistatic plastic tube
VS-MBR2045CTPbF 50 1000 Antistatic plastic tube
VS-MBR2045CT-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220AB PbF www.vishay.com/doc?95225
TO-220AB -N3 www.vishay.com/doc?95028
SPICE model www.vishay.com/doc?95295
35 = 35 V
45 = 45 V
- Schottky MBR series
- Current rating (20 = 20 A)
- Voltage ratings
- CT = Essential part number
Device code
62 43 5
MBR 20 45 CT PbFVS-
1
-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
6
1
Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
13
2
D
D1
H1
Q13
2
C
C
DD
3 x b23 x b
(b, b2)
b1, b3
(H1)
D2
Detail B
C
A
B
L
e1
Lead tip
E
E2
Ø P
0.014 AB
MM
0.015 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220AB
(6)
(6)
(7)
(6)
(7)
e
2 x
L1 (2)
Detail B
Section C - C and D - D
View A - A
Base metal Plating
(4)
(4)
c1
c
(6)
Thermal pad
(E)
E1 (6)
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Revision: 12-Mar-12 1Document Number: 91000
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