MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors BFRS2ALT1 Designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface mount components. 11 suffix indicates tape and reel packaging of 3,000 units per reel. RF TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VcEo 15 Vde Collector-Base Voltage VoBo 20 Vde Emitter-Base Voltage VEBO 2.0 Vdc Collector Current Continuous le 25 mAdc Maximum Junction Temperature TJmax 150 C Power Dissipation, Tease = 75C Poymax) 0.273 Ww Derate linearly above Toase = 75C @ 3.64 mWPrC THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Storage Temperature Tstg 55 to +150 Cc Thermal Resistance Junction to Case Rac 275 CW DEVICE MARKING CASE ores TYLE6 | BFROZALT1 = P2 ] LOW PROFILE ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Coliector-Emitter Breakdown Voltage (1) ViBR)CEO 15 _- Vde (I = 10 mA) Collector-Base Breakdown Voltage V(BRyCBO 20 _ Vde (Ic = 100 WA) Emitter-Base Breakdown Voltage V(BR)EBO 2.0 -_ Vde (Ig = 100 pA) Collector Cutoff Current IcBo _ 50 nA (Vop = 10 V) ON CHARACTERISTICS DC Current Gain hee 40 _ (Ic = 14 MA, Vee = 10 V) CollectorEmitter Saturation Voltage (1) Vece(sat) _ 0.5 Vde {lc = 25 mA, Ig = 5.0 mA) BaseEmitter Saturation Voltage (1) VBE (sat) _ 1.2 Vde (Ic = 25 mA, Ip = 5.0 mA) NOTE: (continued) 1. Pulse Width < 300 ys, Duty Cycle < 2.0%. REV7 MOTOROLA RF DEVICE DATA = 6367255 0091b77 21? BFRE2ALT!ELECTRICAL CHARACTERISTICS continued (T, = 25C unless otherwise noted) Characteristic | Symbol | Typ Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 4.5 GHz (lg = 14 mA, Vog = 10 V, f = 500 MHz) Noise Figure NF 3.0 dB (Voge = 1.5 V, Io = 3.0 MA, Rg = 50 2, f = 500 MHz) Capacitance-Collector to Base Cob 0.7 pF (Vcp = 10 Vde, f= 1.0 MHz) BFR92ALT1 ore ME 6367255 0091678 153 MOTOROLA RF DEVICE DATA