UTC 2SC1815 NPN E P I T A X I A L SI L I C O N TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R201-006,A
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BVCEO=50V
*Collector current up to 150mA
* High hFE linearity
*complimentary to 2SA1015
TO-92
1
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector dissipation(Ta=25°C) Pc 400 mW
Collector current Ic 150 mA
Base current IB 50 mA
Junction Temperature Tj 125
°C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector cut-off current ICBO V
CB=60V,IE=0 100 nA
Emitter cut-off current IEBO V
EB=5V,Ic=0 100 nA
DC current gain(note) hFE1
hFE2
VCE=6V,Ic=2mA
VCE=6V,Ic=150mA
70
25
700
Collector-emitter saturation voltage VCE(sat) Ic=100mA,IB=10mA 0.1 0.25 V
Base-emitter saturation voltage VBE(sat) Ic=100mA,IB=10mA 1.0 V
Current gain bandwidth product fT V
CE=10V,Ic=50mA 80 MHz
Output capacitance Cob VCB=10V,IE=0,f=1MHz 2.0 3.0 pF
Noise Figure NF Ic=-0.1mA,VCE=6V
RG=10kΩ,f=100Hz
1.0 1.0 dB
UTC 2SC1815 NPN E P I T A X I A L SI L I C O N TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R201-006,A
CLASSIFICATION OF hFE1
RANK Y G L
RANGE 120-240 200-400 350-700
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
04 8 121620
0
20
40
60
80
100
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
, DC current Gain
102
101
100
103
103
102
101
100
10
-1
V
CE
=6V
Fig.3 Base-Emitter on Voltage
10
-1
10
0
10
1
10
2
Ic,Collector current (mA)
Base-Emitter voltage (V)
0 0.2 0.4 0.6 0.8 1.0
V
CE
=6V
Ic,Collector current (mA)
103
102
101
100
10
-1
Saturation voltage (mV)
101
102
103
104
Fig.4 Saturation voltage Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
100101102
103
Current Gain-bandwidth
product,f
T
(MHz)
100
101
102
V
CE
=6V
Collector-Base voltage (V)
Cob,Capacitance (pF)
100
101
102
100101102103
f=1MHz
I
E
=0
I
B
=50
µ
A
I
B
=100
µ
A
I
B
=150
µ
A
I
B
=200
µ
A
I
B
=250
µ
A
I
B
=300
µ
A
10
-1
10
-1
