TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices Qualified Level
2N5415
2N5415S 2N5416
2N5416S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N5415 2N5416 Units
Collector-Emitter Voltage VCEO 200 300 Vdc
Collector-Base Voltage VCBO 200 350 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 1.0 Adc
Total Power Dissipation @ TA = +250C
@ TC = +250C PT 0.75
10 W
W
Operating & Storage Temperature Range Top, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 17.5 0C/W
1) Derate linearly 4.28 mW/0C for TA > +250C
2) Derate linearly 57.1 mW/0C for TC > +250C
TO- 5*
2N5415, 2N5416
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 150 Vdc 2N5415
VCE = 200 Vdc 2N5415
VCE = 250 Vdc 2N5416
VCE = 300 Vdc 2N5416
ICEO
50
1.0
50
1.0
µAdc
mAdc
µAdc
mAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc IEBO 20 µAdc
Collector-Emitter Cutoff Current
VCE = 200 Vdc, VBE = 1.5 Vdc 2N5415
VCE = 300 Vdc, VBE = 1.5 Vdc 2N5416
ICEX
50
50
µAdc
µAdc
Collector-Base Cutoff Current
VCB = 175 Vdc 2N5415
VCB = 280 Vdc 2N5416
ICBO1
50
50
µAdc
Collector-Base Cutoff Current
VCB = 200 Vdc 2N5415
VCB = 350 Vdc 2N5416
ICBO2
500
500
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc hFE
30
15
120
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) 2.0 Vdc
Base-Emitter Voltage
IC = 50 mAdc, VCE = 10 Vdc VBE 1.5 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Forward
Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
hfe
3.0
15
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hfe 25
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 15 pF
Input Capacitance
VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc ton 1.0 µs
Turn-Off Time
VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc toff 10 µs
SAFE OPERATING AREA
DC Tests
TC = +250C; 1 Cycle; t = 0.4 s
Test 1
VCE = 10 Vdc, IC = 1.0 Adc
Test 2
VCE = 100 Vdc, IC = 100 mAdc
Test 3
VCE = 200 Vdc, IC = 24 mAdc 2N5415
Test 4
VCE = 300 Vdc, IC = 10 mAdc 2N5416
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
