RFD15P05, RFD15P05SM, RFP15P05 Data Sheet January 2002 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs Features * 15A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09833. * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol Ordering Information PART NUMBER * rDS(ON) = 0.150 D PACKAGE BRAND RFD15P05 TO-251AA D15P05 RFD15P05SM TO-252AA D15P05 RFP15P05 TO-220AB RFP15P05 G S NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD15P05SM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) JEDEC TO-252AA SOURCE DRAIN GATE GATE DRAIN (FLANGE) SOURCE JEDEC TO-220AB DRAIN (FLANGE) (c)2002 Fairchild Semiconductor Corporation SOURCE DRAIN GATE RFD15P05, RFD15P05SM, RFP15P05 Rev. B RFD15P05, RFD15P05SM, RFP15P05 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage (RG = 20K) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFD15P05, RFD15P05SM, RFP15P05 -50 -50 20 -15 Refer to Peak Current Curve Refer to UIS Curve 80 0.533 -55 to 175 UNITS V V V A W W/oC oC oC oC 300 260 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER BVDSS ID = 250A, VGS = 0V (Figure 11) -50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A -2.0 - -4.0 V - - -1 A Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance SYMBOL IDSS IGSS rDS(ON) Turn-On Time tON Turn-On Delay Time tD(ON) - - 25 A VGS = 20V - - 100 nA ID = 15A, VGS = -10V (Figure 9) - - 0.150 VDD = -25V, ID 7.5A, RG = 12.5, RL = 3.3 , VGS = -10V - - 60 ns - 16 - ns - 30 - ns tD(OFF) - 50 - ns tF - 20 - ns Fall Time Turn-Off Time VDS = 0.8 x Rated BVDSS, TC = 150oC tR Rise Time Turn-Off Delay Time VDS = Rated BVDSS - - 100 ns - - 150 nC - - 75 nC - - 3.5 nC VDS = -25V, VGS = 0V f = 1MHz (Figure 12) - 1150 - pF - 300 - pF tOFF Total Gate Charge QG(TOT) VGS = 0V to -20V Gate Charge at -10V QG(-10) VGS = 0V to -10V Threshold Gate Charge QG(TH) VGS = 0V to -2V VDD = -40V, ID = 15A, RL = 2.67, IG(REF) = -0.65mA Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS - 56 - pF Thermal Resistance Junction to Case RJC TO-220AB, TO-251AA, TO-252AA - - 1.875 oC/W Thermal Resistance Junction to Ambient RJA TO-251AA, TO-252AA - - 100 oC/W TO-220AB - - 62.5 oC/W Source to Drain Diode Specifications MIN TYP MAX UNITS Source to Drain Diode Voltage PARAMETER SYMBOL VSD ISD = -15A TEST CONDITIONS - - -1.5 V Reverse Recovery Time tRR ISD = -15A, dISD/dt = -100A/s - - 125 ns NOTES: 2. Pulse test: pulse duration 300ms, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). (c)2002 Fairchild Semiconductor Corporation RFD15P05, RFD15P05SM, RFP15P05 Rev. B RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves -16 POWER DISSIPATION MULTIPLIER 1.2 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 -12 -8 -4 0.2 0 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 25 175 150 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 THERMAL IMPEDANCE ZJC, NORMALIZED TRANSIENT 2 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = 25oC TJ = MAX RATED 100s -10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms 100ms DC -1 -1 -10 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA (c)2002 Fairchild Semiconductor Corporation -100 -200 IDM , PEAK CURRENT CAPABILITY (A) ID , DRAIN CURRENT (A) -100 VGS = -20V -100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 - T C I = I 25 --------------------- 150 VGS = -10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -10 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY RFD15P05, RFD15P05SM, RFP15P05 Rev. B RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves (Continued) -40 -50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC STARTING TJ = 25oC ID , DRAIN CURRENT (A) IAS , AVALANCHE CURRENT (A) STARTING TJ = 150oC -10 If R = 0 tAV = (L) (IAS) / (1.3RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -1 0.1 1 10 tAV , TIME IN AVALANCHE (ms) VGS = -20V VGS = -7V -20 VGS = -6V -10 VGS = -4.5V 0 -3.0 -4.5 -6.0 -7.5 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 7. SATURATION CHARACTERISTICS 2.5 VDD = -15V PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX -32 25oC -55oC -24 175oC -16 -8 0 -2 -4 -6 -8 NORMALIZED DRAIN TO SOURCE ON RESISTANCE IDS(ON) , DRAIN TO SOURCE CURRENT (A) -1.5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -10V, ID = -15A 2.0 1.5 1.0 0.5 0 -80 -10 -40 FIGURE 8. TRANSFER CHARACTERISTICS 40 80 120 160 200 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = -250A 1.5 1.0 0.5 0 -80 0 TJ , JUNCTION TEMPERATURE (oC) VGS , GATE TO SOURCE VOLTAGE (V) NORMALIZED GATE VGS = -5V 0 100 -40 THRESHOLD VOLTAGE VGS = -8V -30 FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 0 VGS = -10V -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE (c)2002 Fairchild Semiconductor Corporation ID = -250A 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE RFD15P05, RFD15P05SM, RFP15P05 Rev. B RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves (Continued) VDS , DRAIN TO SOURCE VOLTAGE (V) CISS 1200 C, CAPACITANCE (pF) -10.0 -50 VDD = BVDSS VDD = BVDSS -7.5 -37.5 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 800 600 COSS 400 RL = 3.33 IG(REF) = -0.65mA VGS = -10V -25 0.25 BVDSS 0.25 BVDSS -12.5 200 CRSS -5.0 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS -2.5 0.0 0 0 0 -5 -10 -15 -20 -25 20 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) 1400 IG(REF) t, TIME (ms) IG(ACT) 80 IG(REF) IG(ACT) NOTE: Refer to Fairchild Application Notes AN7254 and AN7260 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN REQUIRED PEAK IAS - RG + 0V VGS VDD DUT VDD tP IAS IAS VDS tP 0.01 BVDSS FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(OFF) td(ON) tr 0 RL DUT VGS RG VDD + tf 10% 10% VDS VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 16. SWITCHING TIME TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation FIGURE 17. RESISTIVE SWITCHING WAVEFORMS RFD15P05, RFD15P05SM, RFP15P05 Rev. B RFD15P05, RFD15P05SM, RFP15P05 Test Circuits and Waveforms (Continued) VDS RL VDS Qg(TH) 0 VGS = -2V VGS - Qg(-10) + DUT VGS = -10V -VGS VDD VGS = -20V VDD Ig(REF) Qg(TOT) 0 Ig(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation FIGURE 19. GATE CHARGE WAVEFORMS RFD15P05, RFD15P05SM, RFP15P05 Rev. B RFD15P05, RFD15P05SM, RFP15P05 PSPICE Electrical Model .SUBCKT RFP15P05 2 1 3 REV 9/06/94 CA 12 8 1.6e-9 CB 15 14 1.47e-9 CIN 6 8 1.09e-9 LDRAIN 5 10 2 DRAIN DPLCAP DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD 5 51 LDRAIN 2 5 1e-9 LGATE 1 9 6.73e-9 LSOURCE 3 7 6.69e-9 ESG + RGATE 9 1 VTO - EBREAK 17 18 + - 16 DBODY MOS2 21 - 18 20 8 LGATE RDRAIN 6 8 EVTO + GATE ESCL + EBREAK 5 11 17 18 -73.0 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 RSCL1 RSCL2 RIN 11 MOS1 6 DBREAK CIN 8 RSOURCE LSOURCE 3 SOURCE MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 63.6e-3 RGATE 9 20 7.37 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 46.5e-3 RVTO 18 19 RVTOMOD 1 S1A 12 14 13 13 8 S1B 7 S2A 13 15 17 RBREAK S2B 18 RVTO CB CA IT + 6 EGS 8 - + EDS - 14 19 - 5 8 VBAT + S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.65 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))} .MODEL DBDMOD D (IS = 1.27e-13 RS = 1.62e-2 TRS1 = 1.35e-3 TRS2 = -4.33e-6 CJO = 1.25e-9 TT = 7.97e-8) .MODEL DBKMOD D (RS = 2.54e-1 TRS1 = 4.54e-3 TRS2 = -1.12e-5) .MODEL DPLCAPMOD D (CJO = 285e-12 IS = 1e-30 N = 10) .MODEL MOSMOD PMOS (VTO = -3.78 KP = 6.97 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = -4.0e-7) .MODEL RDSMOD RES (TC1 = 5.47e-3 TC2 = 1.37e-5) .MODEL RSCLMOD RES (TC1 = 1.9e-3 TC2 = -7.5e-6) .MODEL RVTOMOD RES (TC1 = -3.71e-3 TC2 = -2.41e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.65 VOFF = 1.65) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = 3.65) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.60 VOFF = -4.40) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.40 VOFF = 0.60) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. (c)2002 Fairchild Semiconductor Corporation RFD15P05, RFD15P05SM, RFP15P05 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4