2007. 3. 28 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3206
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
BLACK AND WHITE TV VIDEO OUTPUT APLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
FEATURES
High Breakdown Voltage : VCEO=150V(Min.).
Low Output Capacitance : Cob=5.0pF(Max.).
High Transition Frequency : fT=120MHz(Typ.).
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE Classification 0:70 140, Y:120 240
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 200 V
Collector-Emitter Voltage VCEO 150 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC50 mA
Emitter Current IE-50 mA
Base Current IB5 mA
Collector Power Dissipation PC1 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=200V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=5V, IC=10mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA - - 1.0 V
Transition Frequency fTVCE=30V, IC=10mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 3.5 5.0 pF