EN 2S C1623,2SC1623R Audio Frequency and 455 kHz IF Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in mitiimeters (inches) 2583 @ High DC Current Gain: hpe=200 TYP. (Vc_E=6.0V, I=1.0mA) @ High Voltage: Voce g=50V 0 98) O5S 7(G 02) 1 5 05]'3 7200 02) 5 (9 0591 ~ ge of FH n 3 8@|/3 6 5 =] siecle co S PEs) d= ETT: 5 ABSOLUTE MAXIMUM RATINGS 22] 8! of B zoe =/| 212 c =e : Maximum Voltages and Current (Ta=25C} Collector to Base Voltage Vcso 60 Vv 38 van Collector to Emitter Voltage VoEo 50 Vv ~ / " Emitter to Base Voltage Veao 5.0 Vv ne t Collector Current (DC} lc 100 mA oe 8 Maximum Power Dissipation 2 | oc g ee +t +3 8 Total Power Dissipation mR zo . ees 01-025 at 25C Ambient Temperature Pr 150 mW = (0.006 9 O11 . 2SC 1623 2SC.1623R Maximum Temperatures 1. Emitter 1. Base Junction Temperature Tj 125 c . 2. Emitter 2. actor 3. Collector Storage Temperature Range Tstg 5510+125 C ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS | Collector Cutoff Current lesbo 0.1 uA Vep=60V, Ie=0 Emitter Cutoff Current lEBO 0.1 uA Veg=5.0V, Ic=0 OC Current Gain hee 60 200 600 | VcE=6.OV, Ic=1.0ma* Collector Saturation Voltage VCE(sat) 0.15 0.3 v te=100mA, Ig=10mA | Base Saturation Voitage VBE(sat) 0.86 1.0 1c=100mA, Ip=10mMA Base Emitter Voltage VBE 0.55 0.62 0.65 Vc|Ee=6.0V, Ic=1.0mA Gain Bandwidth Product fr 250 MHz Vce=6.0V, le=10mA | Output Capacitance Cob 3.0 pF Vcpz6.0V, i=0, f= 1. OMHz * Pulsed: PWS 350us. duty cycle S 2% hee Classification 28C1623 L3 L4 L5 L6 L? MARK 28C01623R 3L 4b SL 6L 7L hee 60 120 90 180 135 270 200 400 300 600 28C1623, 25C1623R TYPICAL CHARACTERISTICS (Ta = 25C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE Free air z < 5 5 3 gE z i 3 6 2 5 8 zo = I 3 =o = L 0 0 a 7 a =200 20 40 60 80 100 120 140 160 180 Vpp-Base to Emitter Voltage-V . Ta-Amtient Temperature "C COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE 100 3 80 = 6 ~ 0 E : E60 5 a 3 3 g z 3 2 20 0 0 10 20 30 40 50 0 4 08 12 16 0 . + Collector to Emitter VoltageV Vc pCollector to Emitter ValtageV BASE AND COLLECTOR SATURATION DC CURRENT GAIN vs. VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT Pulsed i > : 29 gs 5 aa uv as e 33 3 & yg ae oa \ ue \cCollector CurrentmA a1 1, Collector Current mA 95 28C1623, 2SC1623R OC CURRENT GAIN vs, NORMALIZED h PARAMETER vs, COLLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE Vee=6.0V Pulsed h-~Paramaters Referential Ven =6.0V, Io = 1 OmA, f= LkH2 he = 649, he = 6.5% 10* 6 = 220, he = 20u8 _ te Vee) RVR = OV) He Normalized h Parameter her - DC Current Gain Ve -Collector to Emitter Voltage - 4, ~ Collector Current --mA NORMALIZED h PARAMETER vs. COLLECTOR CURRENT hParametars Referential Vatues: en =6.0, le = 1.0m, he =6 OQ, tae = 220, Boe = He= RU =1 Oma) He- Normalized h Parameter he I. --Collector Current -mA 96