ELECTRICAL CHARACTERISTICS (continued)
VCC =±15V,Tamb =25
o
C (unless otherwise specified)
Symbol Parameter TL061AC,AI,AM TL061BC,BI,BM Unit
Min. Typ. Max. Min. Typ. Max.
Vio Input Offset Voltage (Rs=50Ω)
T
amb =25
o
C
T
min.≤Tamb ≤Tmax. 36
7.5 23
5
mV
DVio Temperature Coefficient of Input Offset Voltage
(Rs=50Ω)1010
µV/oC
Iio Input OffsetCurrent *
Tamb =25
o
C
T
min.≤Tamb ≤Tmax. 5 100
35 100
3pA
nA
Iib Input Bias Current *
Tamb =25
o
C
T
min.≤Tamb ≤Tmax. 30 200
730 200
7pA
nA
Vicm Input Common Mode Voltage Range ±11.5 +15
-12 ±11.5 +15
-12 V
VOPP Output Voltage Swing (RL= 10kΩ)
Tamb =25
o
C
T
min.≤Tamb ≤Tmax.20
20 27 20
20 27 V
Avd Large Signal VoltageGain (RL= 10kΩ,V
o=±10V)
Tamb =25
o
C
T
min.≤Tamb ≤Tmax. 4
464
4
6
V/mV
GBP Gain Bandwidth Product
(Tamb =25
o
C, RL= 10kΩ,C
L= 100pF) 1 1 MHz
RiInput Resistance 1012 1012 Ω
CMR Common Mode Rejection Ratio
(Rs=50Ω,T
amb =25
o
C) 80 86 80 86 dB
SVR Supply Voltage Rejection Ratio
(Rs=50Ω,T
amb =25
o
C) 80 95 80 95 dB
Icc Supply Current, no Load
(Tamb =25
o
C, no load, no signal) 200 250 200 250 µA
PDTotal Power Consumption
(Tamb =25
o
C, no load, no signal) 6 7.5 6 7.5 mW
SR Slew Rate (Vi= 10V, RL= 10kΩ,C
L= 100pF, AV= 1) 1.5 3.5 1.5 3.5 V/µs
trRise Time(Vi= 20mV, RL= 10kΩ,C
L= 100pF, AV= 1) 0.2 0.2 µs
KOV Overshoot Factor (Vi= 20mV, RL= 10kΩ,C
L= 100pF,
AV= 1) - (see figure 1) 10 10 %
enEquivalent Input Noise Voltage
(Rs= 100Ω, f = 1KHz) 42 42 nV
√Hz
* The input bias currents of a FET-inputoperational amplifier are normal junction reverse currents, which are temperature sensitive.
Pulse techniques must beused that will maintain the junction temperature as close to the ambient temperature as possible.
TL061 - TL061A - TL061B
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