PD - 97683 AUTOMOTIVE GRADE AUIRFR1010Z HEXFET(R) Power MOSFET Features Advanced Process Technology Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 55V 5.8m 7.5m 91A 42A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S G D-Pak AUIRFR1010Z G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current c Power Dissipation VGS EAS EAS (tested ) IAR EAR Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range h c d g j W W/C V mJ A mJ -55 to + 175 C 300 Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient (PCB mount) A 0.9 20 110 220 See Fig.12a, 12b, 15, 16 Soldering Temperature, for 10 seconds (1.6mm from case ) RJC RJA RJA Units 91 65 42 360 140 i Junction-to-Ambient Typ. Max. Units --- --- --- 1.11 40 110 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 06/16/11 AUIRFR1010Z Static Electrical @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- 2.0 31 --- --- --- --- --- 0.051 5.8 --- --- --- --- --- --- --- --- 7.5 4.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 42A V VDS = VGS, ID = 100A S VDS = 25V, ID = 42A A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V e Dynamic Electrical @ TJ = 25C (unless otherwise specified) Symbol Qg Qgs Qgd td(on) tr td(off) tf LD Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units --- --- --- --- --- --- --- --- 63 17 23 17 76 42 48 4.5 95 --- --- --- --- --- --- --- nC ns nH Conditions ID = 42A VDS = 44V VGS = 10V VDD = 28V ID = 42A RG = 7.6 VGS = 10V Between lead, e e D LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 2840 470 250 1630 360 560 --- --- --- --- --- --- S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V pF G f Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 42 ISM (Body Diode) Pulsed Source Current --- --- 360 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 24 20 1.3 36 30 c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.13mH RG = 25, IAS = 42A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25C, IS = 42A, VGS = 0V TJ = 25C, IF = 42A, VDD = 28V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C www.irf.com AUIRFR1010Z Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK MSL1 Class M4 (+/- 700V) AEC-Q101-002 Class H1C (+/- 1500V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRFR1010Z 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM 10 4.5V 1 0.1 100 BOTTOM 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C 1 Tj = 175C 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 120 Gfs , Forward Transconductance (S) ID, Drain-to-Source Current() 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 100 TJ = 175C 10 TJ = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 TJ = 25C 100 80 TJ = 175C 60 40 20 VDS = 10V 380s PULSE WIDTH 0 0 20 40 60 80 100 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com nce AUIRFR1010Z 5000 VGS, Gate-to-Source Voltage (V) 4000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 3000 2000 Coss 1000 Crss ID= 42A VDS = 44V VDS= 28V VDS= 11V 16 12 8 4 0 0 0 1 10 100 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.00 100.00 TJ = 175C 10.00 TJ = 25C VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 60 80 100 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.10 40 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.00 20 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100 100sec 10 1msec 10msec 1 Tc = 25C Tj = 175C Single Pulse DC 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFR1010Z 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 20 0 25 50 75 100 125 150 ID = 42A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) R3 R3 3 C 3 Ri (C/W) 0.3854 0.3138 i (sec) 0.000251 0.001092 0.4102 0.015307 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFR1010Z DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) 15V 500 I D 7.6A 11A BOTTOM 42A TOP 400 300 200 100 0 tp 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD Charge Fig 13a. Basic Gate Charge Waveform VGS(th) Gate threshold Voltage (V) 4.0 VG ID = 1.0mA 3.5 ID = 250A ID = 100A 3.0 2.5 2.0 1.5 L DUT 0 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRFR1010Z 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 42A 100 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRFR1010Z D.U.T Driver Gate Drive + - * D.U.T. ISD Waveform Reverse Recovery Current + RG * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRFR1010Z D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Part Number AUFR1010Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 10 www.irf.com AUIRFR1010Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRFR1010Z Ordering Information Base part number AUIRFR1010Z 12 Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRFR1010Z AUIRFR1010ZTR AUIRFR1010ZTRL AUIRFR1010ZTRR www.irf.com AUIRFR1010Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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