06/16/11
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HEXFET® Power MOSFET
PD - 97683
AUIRFR1010Z
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
Features
●Advanced Process Technology
●Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Lead-Free, RoHS Compliant
●Automotive Qualified *
GDS
Gate Drain Source
D-Pak
AUIRFR1010Z
G
S
D
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
DSS
55V
R
DS(on)
typ.
5.8m
Ω
max. 7.5m
Ω
D (Silicon Limited)
91A
D (Package Limited)
42A
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
E
AS
(tested )
Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case
j
–––
1.11
R
θJA
Junction-to-Ambient (PCB mount)
i
–––
40
°C/W
R
θJA
Junction-to-Ambient
–––
110
-55 to + 175
300
140
0.9
± 20
Max.
91
65
360
42
220
110
See Fig.12a, 12b, 15, 16
AUIRFR1010Z
2www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.13mH
RG = 25Ω, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from
0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately 90°C
Static Electrical @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
0.051
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
5.8
7.5
m
Ω
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
31
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Dynamic Electrical @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
63
95
Q
gs
Gate-to-Source Charge
–––
17
–––
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
23
–––
t
d(on)
Turn-On Delay Time
–––
17
–––
t
r
Rise Time
–––
76
–––
t
d(off)
Turn-Off Delay Time
–––
42
–––
ns
t
f
Fall Time
–––
48
–––
L
D
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
2840
–––
C
oss
Output Capacitance
–––
470
–––
C
rss
Reverse Transfer Capacitance
–––
250
–––
pF
C
oss
Output Capacitance
–––
1630
–––
C
oss
Output Capacitance
–––
360
–––
C
oss
eff.
Effective Output Capacitance
–––
560
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
–––
–––
42
(Body Diode) A
I
SM
Pulsed Source Current
–––
–––
360
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
24
36
ns
Q
rr
Reverse Recovery Charge
–––
20
30
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 20V
V
GS
= -20V
V
DS
= 44V
V
DS
= 25V, I
D
= 42A
I
D
= 42A
Conditions
Conditions
V
GS
= 10V
e
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 42A, V
DD
= 28V
di/dt = 100A/μs
e
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 42A
e
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 10V
e
V
DD
= 28V
I
D
= 42A
R
G
= 7.6
Ω
AUIRFR1010Z
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
Qualification Information
†
D-PAK MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4 (+/- 700V)
†††
AEC-Q101-002
Human Body Model Class H1C (+/- 1500V)
†††
AEC-Q101-001
AUIRFR1010Z
4www.irf.com
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 175°C
4.5V
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current
(Α)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60μs PULSE WIDTH
0 20406080100
ID,Drain-to-Source Current (A)
0
20
40
60
80
100
120
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380μs PULSE WIDTH
AUIRFR1010Z
www.irf.com 5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 20406080100
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 42A
1 10 100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
DC
nce
AUIRFR1010Z
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
ID , Drain Current (A)
LIMITED BY PACKAGE
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 42A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.3854 0.000251
0.3138 0.001092
0.4102 0.015307
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
AUIRFR1010Z
www.irf.com 7
QG
QGS QGD
VG
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
1K
VCC
DUT
0
L
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
500
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 7.6A
11A
BOTTOM 42A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
ID = 250μA
ID = 100μA
AUIRFR1010Z
8www.irf.com
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ΔTj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 42A
AUIRFR1010Z
www.irf.com 9
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRFR1010Z
10 www.irf.com
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
AUFR1010Z
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Part Number
IR Logo
Lot Code
AUIRFR1010Z
www.irf.com 11
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRFR1010Z
12 www.irf.com
Ordering Information
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFR1010Z
Dpak
Tube
75
AUIRFR1010Z
Tape and Reel
2000
AUIRFR1010ZTR
Tape and Reel Left
3000
AUIRFR1010ZTRL
Tape and Reel Right
3000
AUIRFR1010ZTRR
AUIRFR1010Z
www.irf.com 13
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