Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, S4111/S4114 series are able to detect low level light with high sensitivity. Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window (custom order products). Features Applications Large active area Multichannel spectrophotometers Low cross-talk Color analyzers S4111 series: Enhanced infrared sensitivity, low dark current S4114 series: IR sensitivity suppressed type, low terminal capacitance, high-speed response Light spectrum analyzers Light position detection General ratings / Absolute maximum ratings Type No Window material Package (mm) S4111-16R S4111-16Q S4111-35Q S4111-46Q S4114-35Q S4114-46Q Resin potting 18 pin DIP 40 48 40 48 Quartz pin pin pin pin DIP DIP DIP DIP Between Between Active area elements elements Number (per 1 element) measure pitch of elements Size Effective area (mm) (mm2) (mm) (mm) 1.45 x 0.9 1.305 (V) (C) (C) 15 -20 to +60 -20 to +80 16 0.1 4.4 x 0.9 Absolute maximum ratings Reverse Operating Storage voltage temperature temperature VR max Topr Tstg 1.0 3.96 35 46 35 46 Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 C, per 1 element, unless otherwise noted) Type No. S4111-16R S4111-16Q S4111-35Q S4111-46Q S4114-35Q S4114-46Q Peak Spectral response sensitivity range wavelength p (nm) 340 to 1100 190 to 1100 190 to 1000 (nm) 960 800 Dark Shunt Rise time Terminal current resistance tr capacitance ID Rsh RL=1 k Ct Max. VR=10 mV =655 nm 200 nm 633 nm VR=10 mV VR=10 V Min p Typ. VR=0 V VR=10 V VR=0 V VR=10 V (s) (s) (A/W) (A/W) (A/W) (pA) (pA) (G) (G) (pF) (pF) 0.39 5 25 2.0 250 200 50 0.5 0.1 0.08 0.43 0.58 10 50 1.0 30 550 120 1.2 0.3 0.08 0.43 0.50 60 300 0.15 2 35 20 0.1 0.05 Photo sensitivity S www.hamamatsu.com NEP =p VR=0 V VR=10 V (W/Hz1/2) (W/Hz1/2) 4.4 x 10-16 1.7 x 10-15 1.3 x 10-15 3.1 x 10-15 5.7 x 10-15 8.0 x 10-15 1 Si photodiode array S4111/S4114 series Photo sensitivity temperature characteristics Spectral response (Typ. Ta=25 C) 0.8 +1.2 Photo sensitivity (A/W) S4111-16Q/-35Q/-46Q 0.6 S4111-16R 0.5 0.4 0.3 0.2 S4114 SERIES Temperature coefficient (%/C) 0.7 S4111 SERIES +1.0 +0.8 S4114 SERIES +0.6 +0.4 +0.2 0 0.1 0 190 (Typ.) +1.4 400 600 800 1000 -0.2 190 1200 Wavelength (nm) 600 400 800 Wavelength (nm) KMPDB0112EB KMPDB0113EA Terminal capacitance vs. reverse voltage Dark current vs. reverse voltage Dark current 10 pA (Typ. Ta=25 C) S4114-35Q/-46Q S4111-35Q/-46Q S4111-35Q/-46Q 1 pA S4111-16Q/-16R 100 fA 10 fA 0.01 (Typ. Ta=25 C) 1 nF Terminal capacitance 100 pA 1000 1100 100 pF S4111-16Q/-16R S4114-35Q/-46Q 0.1 1 10 100 Reverse voltage (V) 10 pF 0.1 1 10 100 Reverse voltage (V) KMPDB0114EA KMPDB0115EA 2 Si photodiode array S4111/S4114 series Example of cross-talk S4111 series S4114 series (Ta=25 C, =655 mm, VR=0 V) (Ta=25 C, =655 mm, VR=0 V) 100 Relative sensitivity (%) Relative sensitivity (%) 100 10 1 10 1 0.1 0.1 Light position on active area (500 m/div.) Light position on active area (500 m/div.) KMPDB0015EA KMPDB0018EB Dimensional outline (unit: mm) S4111-16Q 7 8 0.9 0.3 Photosensitive surface 1 2 3 Index mark (4.5) Resin Photosensitive surface 4 5 6 7 8 0.46 7.62 0.3 6.5 1.45 7.62 0.3 0.25 9 0.5 0.2 7.87 0.3 6 Active area ch 16 15.9 17 16 15 14 13 12 11 10 9 22.0 Quartz window 2.2 0.3 5 18 7.49 0.2 4 ch 1 (4.5) 1 2 3 Index mark 7.87 0.3 7.49 0.2 0.5 0.2 0.5 Active area ch 16 15.9 18 17 16 15 14 13 12 11 10 Photosensitive surface 18.8 2.2 0.3 1.45 ch 1 22.86 0.3 Photosensitive surface 18.8 0.9 0.3 22.86 0.3 0.25 S4111-16R 0.46 2.54 2.54 P 2.54 x 8 = 20.32 P 2.54 x 8 = 20.32 KMPDA0136EB KMPDA0135EB 3 Si photodiode array S4111/S4114 series S4111-35Q, S4114-35Q S4111-46Q, S4114-46Q 50.8 0.6 12 Index mark 2.8 0.3 a (4.5) Quartz window Photosensitive surface 0.46 2.54 Type No. a S4111-35Q 1.45 S4114-35Q 1.35 0.25 ch 46 a Quartz window 0.46 2.54 P 2.54 x 23 = 58.42 P 2.54 x 19 = 48.26 15.24 0.25* 23 24 (4.5) Photosensitive surface 26 25 15.11 0.25 4.4 15.5 0.3 19 20 Pin no. 1 2 48 47 15.5 0.3 ch 1 15.24 0.25* 22 21 ch 35 40 39 Photosensitive surface Active area 45.9 3.0 0.3 0.25 Active area 34.9 15.11 0.25 4.4 ch 1 65.0 0.8 Photosensitive surface Type No. a S4111-46Q 1.65 S4114-46Q 1.55 KMPDA0021ED KMPDA0019ED a Details of elements (for all types) c b a b c S4111-16Q/16R 1.45 0.9 0.1 S4111-35Q/46Q S4114-35Q/46Q 4.4 0.9 0.1 c KMPDA0112EA 4 Si photodiode array Pin connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 16-element type KC 2 4 6 8 10 12 14 16 KC 15 13 11 9 7 5 3 1 S4111/S4114 series Operating circuits 35-element type KC 2 4 6 8 10 12 14 16 18 NC 20 22 24 26 28 30 32 34 NC KC 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 3 1 NC 46-element type KC 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 KC 45 43 41 39 37 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 3 1 In the most generally used circuit, operational amplifiers are con-nected to each channel to read the output in real time. The output of an operational amplifier is of low impedance and thus can be easily multiplexed. PHOTODIODE ARRAY MULTIPLEXER KMPDC0001EA In the charge storage readout method, the charge stored in the junction capacitance of each channel, which is proportional to the incident light intensity, can be read out in sequence by a multiplexer. With this method, reverse voltage must be applied to the photodiodes, so S4111 and S4114 series are suitable. One amplifier is sufficient but care should be taken regarding noise, dynamic range, etc. ADDRESS PHOTODIODE ARRAY BIAS MULTIPLEXER KMPDC0002EA HAMAMATSU also provides the C9004 driver circuit for Si photodiode arrays, that allows direct mounting of the S4111-16Q/R on the circuit board. 5 Si photodiode array S4111/S4114 series Information described in this material is current as of October, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1002E07 Oct. 2011 DN 6