HiPerFETTM Power MOSFETs IXFH 26N50Q IXFQ 26N50Q IXFT 26N50Q Q-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M 500 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 26 A IDM TC = 25C 104 A IAR TC = 25C 26 A EAR TC = 25C 30 mJ EAS TC = 25C 1.5 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 PD TC = 25C 5 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-247, TO-3P TO-268 6 4 g g Symbol Test Conditions VDSS VGS = 0 V, ID = 250 A VGS(th) V DS = VGS, ID = 4 mA IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 2 (c) 2003 IXYS All rights reserved Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25C TJ = 125C V 4.5 V 100 nA 25 1 A mA 0.20 V A ns TO-247 AD (IXFH) (TAB) TO-3P (IXFQ) G V/ns 300 = 500 = 26 = 0.20 250 C (TAB) E TO-268 (D3) (IXFT) Case Style G S G = Gate, S = Source, (TAB) D = Drain, TAB = Drain Features z IXYS advanced low Qg process z International standard packages z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Fast switching z Molding epoxies meet UL 94 V-0 flammability classification Advantages z Easy to mount z Space savings z High power density DS99128(12/03) IXFH 26N50Q IXFQ 26N50Q IXFT 26N50Q Symbol gfs Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. V DS = 10 V; ID = 0.5 * ID25, Note 2 24 S 3900 pF 500 pF Crss 130 pF td(on) 28 ns ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 14 tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 30 td(off) RG = 2 (External), 55 ns tf 16 ns Qg(on) 95 nC 27 nC 40 nC Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd RthJC RthCK 0.42 TO-247, TO-3P Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; Note1 VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr QRM IRM K/W IF = IS, -di/dt = 100 A/s, VR = 100 V 0.85 8 26 A 104 A 1.3 V 250 ns C A TO-247 Outline 1 2 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline TO-3P Outline Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFH 26N50Q IXFQ 26N50Q IXFT 26N50Q 60 50 40 40 6V 30 20 5V 10 0 0 4 8 12 16 6V 30 20 5V 10 0 20 0 4 8 VDS - Volts 20 2.4 V GS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 16 Fig.2 Output Characteristics @ Tj = 125C 2.8 TJ = 125oC 2.0 1.6 TJ = 25oC 1.2 0 10 20 30 40 50 2.0 1.6 ID = 13A 1.2 0.8 25 60 ID = 26A 50 Fig.3 RDS(on) vs. Drain Current 125 150 50 25 40 ID - Amperes 20 15 10 30 TJ = 125oC TJ = 25oC 20 10 5 -50 100 Fig.4 Temperature Dependence of Drain to Source Resistance 30 0 75 T J - Degrees C ID - Amperes ID - Amperes 12 VDS - Volts Fig.1 Output Characteristics @ Tj = 25C 0.8 VGS=10V 9V 8V 7V TJ = 125OC ID - Amperes ID - Amperes 50 VGS=10V 9V 8V 7V TJ = 25OC -25 0 25 50 75 100 125 150 TC - Degrees C Fig.5 Drain Current vs. Case Temperature (c) 2003 IXYS All rights reserved 0 0 2 4 6 8 VGS - Volts Fig.6 Drain Current vs Gate Source Voltage IXFH 26N50Q IXFQ 26N50Q IXFT 26N50Q 10000 12 f = 1MHz 10 VGS - Volts 8 Capacitance - pF VDS = 250 V ID = 13 A IG = 10 mA 6 4 Ciss Coss 1000 Crss 2 0 100 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 50 45 40 ID - Amperes 35 30 TJ = 125OC 25 20 TJ = 25OC 15 10 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.9 Drain Current vs Drain to Source Voltage 1.00 R(th)JC - K/W D=0.5 0.10 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.00 10-5 10-4 10-3 10-2 10-1 100 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 101