DATA SH EET
Product specification
Supersedes data of October 1992
File under discrete semiconductors, SC14
1995 Sep 18
DISCRETE SEMICONDUCTORS
BFR92AW
NPN 5 GHz wideband transistor
1995 Sep 18 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Marking code: P2.
Fig.1 SOT323
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−20 V
VCEO collector-emitter voltage open base −−15 V
ICcollector current (DC) −−25 mA
Ptot total power dissipation up to Ts=93°C; note 1 −−300 mW
hFE current gain IC= 15 mA; VCE =10V 40 90
C
re feedback capacitance IC= 0; VCE = 10 V; f = 1 MHz;
Tamb =25°C0.35 pF
fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 GHz
GUM maximum unilateral power
gain IC= 15 mA; VCE = 10 V; f = 1 GHz;
Tamb =25°C14 dB
IC= 15 mA; VCE = 10 V; f = 2 GHz;
Tamb =25°C8dB
F noise figure IC= 5 mA; VCE = 10 V; f = 1 GHz;
Γs=Γopt
2dB
Tjjunction temperature −−150 °C
1995 Sep 18 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2V
I
Ccollector current (DC) 25 mA
Ptot total power dissipation up to Ts=93°C; see Fig.2; note 1 300 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to
soldering point up to Ts=93°C; note 1 190 K/W
Fig.2 Power derating curve
0 50 100 200
200
0
MLB540
150T ( C)
o
s
Ptot
(mW)
300
400
100
1995 Sep 18 4
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
CHARACTERISTICS
Tj=25°C (unless otherwise specified).
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector leakage current IE= 0; VCB =10V −−50 nA
hFE DC current gain IC= 15 mA; VCE = 10 V 40 90
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz 0.6 pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz 0.9 pF
Cre feedback capacitance IC= 0; VCE = 10 V; f = 1 MHz 0.35 pF
fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 GHz
GUM maximum unilateral power
gain; note 1 IC= 15 mA; VCE =10V;
f = 1 GHz; Tamb =25°C14 dB
IC= 15 mA; VCE =10V;
f = 2 GHz; Tamb =25°C8dB
F noise figure IC= 5 mA; VCE =10V;
f = 1 GHz; Γs=Γopt
2dB
IC= 5 mA; VCE =10V;
f = 2 GHz; Γs=Γopt
3dB
GUM 10 s21 2
1s
11 2
()1s
22 2
()
------------------------------------------------------------ dB.log=
1995 Sep 18 5
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.3 DC current gain as a function of collector
current; typical values.
VCE =10V.
handbook, halfpage
0102030
120
0
40
80
MCD074
hFE
I (mA)
C
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
IC= 0; f = 1 MHz.
0
1.0
020
MGC883
48 V (V)
CB
Cre
(pF)
0.8
0.6
0.4
0.2
12 16
Fig.5 Transition frequency as a function of
collector current; typical values.
VCE = 5 V; f = 500 MHz; Tamb =25°C.
handbook, halfpage
4
2
0
MGC884
101
6
fT
(GHz)
I (mA)
C102
1995 Sep 18 6
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.6 Gain as a function of collector current;
typical values.
VCE = 10 V; f = 500 MHz.
handbook, halfpage
0
30
20
10
0510
MGC885
15 20
gain
(dB)
I (mA)
C
MSG
GUM
Fig.7 Gain as a function of collector current;
typical values.
VCE = 10 V; f = 1 GHz.
handbook, halfpage
0
30
20
10
0510
MGC886
15 20
gain
(dB)
I (mA)
C
MSG
GUM
Fig.8 Gain as a function of frequency;
typical values.
VCE =10V;I
C= 5 mA.
handbook, halfpage
50
010
MGC887
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
Gmax
MSG
Fig.9 Gain as a function of frequency;
typical values.
VCE =10V;I
C=15mA.
handbook, halfpage
50
010
MGC888
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
Gmax
MSG
1995 Sep 18 7
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.10 Minimum noise figure as a function of
collector current; typical values.
VCE =10V.
handbook, halfpage
4
2
0
MGC889
101
6
F
(dB)
I (mA)
C
f = 2 GHz
500 MHz
1 GHz
102
Fig.11 Minimum noise figure as a function of
frequency; typical values.
VCE =10V.
handbook, halfpage
4
2
0
MGC890
103
102
6
F
(dB)
f (MHz)
IC = 15 mA
5 mA
10 mA
104
Fig.12 Common emitter noise figure circles; typical values.
f = 500 MHz; VCE = 10 V; IC= 5 mA; Zo=50.
handbook, full pagewidth
MGC891
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
2 5
180o
2
0.5
0.50.2
0.2
0
0.2
1
5
F = 2 dB
opt
Γ
F = 1.6 dB
min
F = 4 dB
F = 3 dB
1995 Sep 18 8
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.13 Common emitter noise figure circles; typical values.
f = 1 GHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.
handbook, full pagewidth
MGC892
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
21 5
180o
2
5
0.5
0.2
0.2
0.5
0.2
0
(4)
(3)
(2)
(1)
(6)
(5)
(7)
(8)
(1) Γopt; Fmin = 2.1 dB.
(2) F = 2.5 dB.
(3) F = 3 dB.
(4) F = 4 dB.
(5) Γms;G
max = 15.7 dB.
(6) G = 15 dB.
(7) G = 14 dB.
(8) G = 13 dB.
Fig.14 Common emitter noise figure circles; typical values.
f = 2 GHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.
handbook, full pagewidth
MGC893
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
21 5
180o
2
5
0.5
0.5
0.2
0
0.2
0.2
(3)
(2)
(1)
(5)
(4)
(6)
(7)
(8)
(1) Γopt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5) Γms;G
max = 9.1 dB.
(6) G = 8 dB.
(7) G = 7 dB.
(8) G = 6 dB.
1995 Sep 18 9
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.15 Common emitter input reflection coefficient (s11); typical values.
VCE = 10 V; IC= 15 mA; Zo=50.
handbook, full pagewidth
MGC894
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
0.2
0.5
1
2
5
2
0.2
2
5
5
o
180 0.2 1
00.5
40 MHz
3 GHz
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
VCE = 10 V; IC=15mA.
handbook, full pagewidth
MGC895
0o
90o
135o
180o
90o
50 40 30 20 10
45o
135o45o
40 MHz 3 GHz
1995 Sep 18 10
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
VCE = 10 V; IC=15mA.
handbook, full pagewidth
MGC896
0o
90o
135o
180o
90o
0.25 0.20 0.15 0.10 0.05
45o
135o45o
40 MHz
3 GHz
Fig.18 Common emitter output reflection coefficient (s22); typical values.
VCE = 10 V; IC= 15 mA; Zo=50.
handbook, full pagewidth
MGC897
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
1
0.5
0
0.2
0.5
1
2
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
5
1995 Sep 18 11
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
PACKAGE OUTLINE
Fig.19 SOT323.
Dimensions in mm.
handbook, full pagewidth
0.25
0.10
B
0.2
0.2 A
A
M
M
12
3
0.65
1.3
2.2
1.8
0.40
0.30
B
1.35
1.15
2.2
2.0
detail X
X
1.1
max
0.1
0.0
1.0
0.8
0.3
0.1
0.2
MBC871
1995 Sep 18 12
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.