IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A 66m 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 52 A IDM TC = 25C, pulse width limited by TJM 150 A IA TC = 25C 52 A EAS TC = 25C 1 J dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 400 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ = = TL Maximum lead temperature for soldering 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. Weight PLUS220 & PLUS220SMD TO-247 4 6 g g G D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2008 IXYS CORPORATION, All rights reserved V 5.0 V 100 nA 25 A 1 mA z z z z International standard packages Fast recovery diode Avalanche rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density 66 m DS99197F(05/08) IXFH52N30P IXFV52N30P IXFV52N30PS Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 10V, ID = 0.5 * ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 52A RG = 4 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 30 S 3490 pF 550 pF 130 pF 24 ns 22 ns 60 ns 20 ns 110 nC 25 nC 53 nC 0.31 C/W RthJC RthCS (TO-247, PLUS220) 0.25 Source-Drain Diode TJ = 25C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM PLUS220 (IXFV) Outline C/W Characteristic Values Min. Typ. Max. 52 A Repetitive, pulse width limited by TJM 150 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 25A, -di/dt = 100A/s VR = 100V, VGS = 0V 160 200 ns 800 nC 7 A TO-247 (IXFH) Outline P Note 1: Pulse test, t 300s; duty cycle, d 2%. PLUS220SMD (IXFV_S) Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 150 55 VGS = 10V 8V 50 45 VGS = 10V 9V 125 7V 35 I D - Amperes I D - Amperes 40 30 25 6V 20 100 8V 75 7V 50 15 10 5V 5 5V 0 0 0.0 0.5 1.0 1.5 2.0 VD S 2.5 3.0 3.5 4.0 4.5 5.0 0 4 8 12 VD - Volts Fig. 3. Output Characteristics @ 125C 16 S 20 24 28 - Volts Fig. 4. RDS(on) Normalized to I D = 26A Value vs. Junction Temperature 3.2 55 VGS = 10V 8V 50 R D S (on) - Normalized 40 7V 35 30 25 6V 20 15 5V 10 VGS = 10V 2.8 45 I D - Amperes 6V 25 2.4 2.0 ID = 52A ID = 26A 1.6 1.2 0.8 5 0.4 0 0 1 2 3 4 5 VD S 6 7 8 9 -50 10 -25 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to I D = 26A Value vs. Drain Current 60 3.8 VGS = 10V 3.4 50 TJ = 125C 3.0 I D - Amperes R D S (on) - Normalized 0 - Volts 2.6 2.2 1.8 40 30 20 TJ = 25C 1.4 10 1.0 0.6 0 0 25 50 I 75 D 100 - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 125 150 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 8. Transconductance Fig. 7. Input Admittance 100 60 90 55 50 80 45 70 60 50 TJ = 125C 25C -40C 40 30 25C 40 g f s - Siemens I D - Amperes TJ = - 40C 35 125C 30 25 20 15 20 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 10 20 30 40 V G S - Volts I Fig. 9. Source Current vs. Source-To-Drain Voltage 50 60 70 80 90 100 - Amperes Fig. 10. Gate Charge 160 10 140 9 VDS = 150V ID = 26A IG = 10m A 8 120 7 100 VG S - Volts I S - Amperes D 80 60 6 5 4 3 TJ = 125C 40 2 TJ = 25C 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 10 20 30 40 50 60 70 80 90 V S D - Volts Q G - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 f = 1MHz TJ = 25C TJ = 150C Single Pulse C iss 1000 I D - Amperes R DS(on) Lim it Capacitance - pF 10 11 12 0 0 0 C oss 100 25s 1m s 10ms 10 100ms DC C rss 100 1 0 5 10 15 VD 20 S 25 30 35 40 - Volts 10 100 VD S 1000 - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_52N30P(6S)3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 13. Maximum Transient Thermal Impedance 0.10 Z (t h ) J C - (C /W ) 1.00 0.01 1 10 100 1000 Pulse Width - milliseconds (c) 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_52N30P(6S)3-14-06-C