IGBT MODULE PDMB100A6 Dual 100A 600V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PDMB100A6 Unit VCES VGES IC ICP PC Tj Tstg VISO 600 +/ - 20 100 200 400 -40 to +150 -40 to +125 2500 V V W C C V FTOR 2 N*m Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A Min. Typ. Max. 4.0 - 2.1 10,000 0.15 0.25 0.2 0.45 1.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic s Unit 100 200 A Symbol Test Condition Min. Typ. Max. VF trr IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=100A/s - 1.9 0.15 2.4 0.25 Unit V s Test Condition Min. Typ. Max. Unit Junction to Case - - 0.31 0.65 C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA A V V pF Symbol IGBT DIODE Rth(j-c) http://store.iiic.cc/ PDMB100A6 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 VGE =20V IC =40A 15V 10V 150 Collector Current I C (A) 16 12V 100 9V 50 8V Collector to Emitter Voltage V CE (V) 200 14 TC=25 200A 100A 12 10 8 6 4 2 7V 0 0 2 4 6 8 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 100A 12 10 8 6 4 2 0 4 8 12 16 R L=3 TC=25 16 350 300 12 250 10 200 8 VCE =300V 150 6 200V 100 4 100V 50 0 20 14 2 0 100 200 300 0 400 Total Gate Charge Qg (nC) Gate to Emitter Voltage V GE (V) Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 50000 1 V GE =0V f=1MHZ TC=25 Cies 20000 Coes Cres VCC=300V RG=7.5 VGE =15V TC=25 0.9 0.8 Switching Time t (s) 10000 Capacitance C (pF) 20 400 200A 14 0 16 5000 2000 1000 500 0.7 0.6 0.5 toff 0.4 0.3 200 0.2 ton tf 100 0.1 tr 50 0.2 0.5 1 2 5 10 20 50 100 200 0 0 Collector to Emitter Voltage V CE (V) 20 40 60 Collector Current IC (A) http://store.iiic.cc/ 80 100 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) I C=40A 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 16 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) PDMB100A6 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) Fig.7- Series Gate Impedance vs. Switching Time (Typical) 200 5 VCC=300V I C=100A VG=15V TC=25 TC=125 160 toff ton 1 Forward Current I F (A) Switching Time t (s) 2 TC=25 180 tr 0.5 tf 0.2 140 120 100 80 60 40 0.1 20 0.05 1 10 0 100 0 1 Series Gate Impedance R G () 3 1000 IF=100A TC=25 RG=7.5 VGE =15V TC125 500 200 200 Collector Current I C (A) trr 100 50 20 I RrM 10 4 Fig.10- Reverse Bias Safe Operating Area (Typical) Fig.9- Reverse Recovery Characteristics (Typical) 500 100 50 20 10 5 2 1 0.5 0.2 100 200 300 400 500 0.1 600 0 200 400 Fig.11- Transient Thermal Impedance 1 5x10 -1 FRD 2x10 -1 1x10 IGBT -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25 2x10 -3 1x10 -3 -5 10 600 Collector to Emitter Voltage V CE (V) -di/dt (A/s) (/W) 0 (J-C) 5 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 2 Forward Voltage V F (V) 1 Shot Pulse 10 -4 10 -3 10 -2 Time t (s) http://store.iiic.cc/ 10 -1 1 10 1 800