IGBT MODULE
MODULE MODULE
MODULE Dual 100A 600V
Dual 100A 600VDual 100A 600V
Dual 100A 600V
PDMB100A6
PDMB100A6PDMB100A6
PDMB100A6
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS (Tc=25°C)
Item Symbol PDMB100A6 Unit
Collector-Emitter Voltage VCES 600 V
Gate - Emitter Voltage VGES +/ - 20 V
DC IC 100
Collector Current 1 ms ICP 200
A
Collector Power Dissipation PC 400 W
Junction Temperature Range Tj -40 to +150 °C
Storage Temperature Range Tstg -40 to +125 °C
Isolation Voltage Terminal to Base AC, 1 min.) VISO 2500 V
Module Base to Heatsink
Mounting Torque Bus Bar to Main Termin als FTOR 2 N•m
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter Cut-Off Current ICES V
CE=600V,VGE=0V - - 1.0
mA
Gate-Emitter Leakage Current IGES V
GE=+/- 20V,VCE=0V - - 1.0
µA
Collector-Emitter Saturation Voltage VCE(sat) I
C=100A,VGE=15V - 2.1 2.6
V
Gate-Emitter Threshold Voltage VGE(th) V
CE=5V,IC=100mA 4.0 - 8.0
V
Input Capacitance Cies VCE=10V,VGE=0V,f=1MHz - 10,000 -
pF
Rise Time tr - 0.15 0.3
Turn-on Time ton - 0.25 0.4
Fall Time tf - 0.2 0.35
Switching Time
Turn-off Time toff
VCC= 300V
RL= 3 ohm
RG= 7.5 ohm
VGE= +/- 15V - 0.45 0.7
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item Symbol Rated Value Unit
DC IF 100
Forward Current 1 ms IFM 200
A
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Peak Forward Voltage VF I
F=100A,VGE=0V - 1.9 2.4
V
Reverse Recovery Time trr IF=100A,VGE=-10V,di/dt=100A/µs - 0.15 0.25
µs
THERMAL CHARACTERISTICS
Characteristic Symbol Test Condition Min. Typ. Max. Unit
IGBT - - 0.31
Thermal Impedance DIODE Rth(j-c) Junction to Case - - 0.65
°C/W
4- fasten- tab No 110
Dimension(mm)
A
pproximate Weight : 220g
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PDMB100A6
0246810
0
50
100
150
200
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Fig.1- Output Characteristics
(Typical)
TC=25℃
10V
9V
12V
15V
VGE =20V
8V
7V
0 4 8 121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Voltage V
CE
(V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
TC=25℃
100A
IC=40A 200A
0 4 8 12 16 20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE
(V)
Collector to Emitter Voltage V CE
(V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
TC=125℃
100A
IC=40A 200A
0
2
4
6
8
10
12
14
16
0 100 200 300 400
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg
(nC)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
VCE=300V
200V
100V
RL=3Ω
TC=25℃
0.2 0.5 1 2 5 10 20 50 100 200
50
100
200
500
1000
2000
5000
10000
20000
50000
Collector to Emitter Voltage V
CE
(V)
Capacitance C
(pF)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
Cies
Coes
Cres
VGE =0V
f=1MHZ
TC=25℃
0 20 40 60 80 100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Collector Current I
C
(A)
Switching Time t
(μs)
Fig.6- Collector Current vs. Switching Time
(Typical)
toff
VCC=300V
RG=7.5Ω
VGE =±15V
TC=25℃
ton
tr
tf
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PDMB100A6
1 10 100
0.05
0.1
0.2
0.5
1
2
5
Series Gate Impedance R
G
(Ω)
Switching Time t
(μs)
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
VCC=300V
IC=100A
VG=±15V
TC=25℃
tf
tr
ton
toff
01234
0
20
40
60
80
100
120
140
160
180
200
Forward Voltage V
F
(V)
Forward Current I
F
(A)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
TC=25℃TC=125℃
0 100 200 300 400 500 600
5
10
20
50
100
200
500
-di/dt
(A/μs)
Peak Reverse Recovery Current I RrM
(A)
Reverse R ecovery Time trr
(ns)
Fig.9- Reverse Recovery Characteristics
(Typical)
IRrM
trr
IF=100A
TC=25℃
0 200 400 600 800
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Collector to Emitter Voltage V
CE
(V)
Collector Current I C
(A)
Fig.10- Reverse Bias Safe Operating Area
(Typical)
RG=7.5Ω
VGE =±15V
TC≦125℃
10
-5
10
-4
10
-3
10
-2
10
-1
110
1
1x10
-3
2x10
-3
5x10
-3
1x10
-2
2x10
-2
5x10
-2
1x10
-1
2x10
-1
5x10
-1
1
Time t
(s)
Transient Thermal Impedance Rth
(J-C) (℃/W)
Fig.11- Transient Thermal Impedance
TC=25℃
1 Shot Pulse
FRD
IGBT
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