PD - 9.1568B IRF7317 PRELIMINARY HEXFET(R) Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V VDSS RDS(on) 0.029 0.058 P -C H AN N E L MO S FET Description N-Ch T o p V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage V DS VGS TA = 25C TA = 70C Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range ID IDM IS Maximum P-Channel N-Channel 20 6.6 5.3 26 2.5 -5.3 -4.3 -21 -2.5 2.0 1.3 PD EAS IAR EAR dv/dt TJ, TSTG -20 12 100 4.1 Units V A W 150 -2.9 0.20 mJ A mJ V/ ns 5.0 -5.0 -55 to + 150 C Symbol Limit Units RJA 62.5 C/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient 12/9/97 IRF7317 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient Min. 20 -20 -- -- -- -- -- -- 0.7 -0.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Typ. Max. -- -- -- -- 0.027 -- 0.031 -- 0.023 0.029 0.030 0.046 0.049 0.058 0.082 0.098 -- -- -- -- 20 -- 5.9 -- -- 1.0 -- -1.0 -- 5.0 -- -25 -- 100 18 27 19 29 2.2 3.3 4.0 6.1 6.2 9.3 7.7 12 8.1 12 15 22 17 25 40 60 38 57 42 63 31 47 49 73 900 -- 780 -- 430 -- 470 -- 200 -- 240 -- Units V V/C V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 4.5V, ID = 6.0A VGS = 2.7V, ID = 5.2A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 10V, ID = 6.0A VDS = -10V, ID = -1.5A VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 55C VDS = -16V, VGS = 0V, TJ = 55C VGS = 12V N-Channel ID = 6.0A, VDS = 10V, VGS = 4.5V nC P-Channel ID = -2.9A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0, RD = 10 ns P-Channel VDD = -10V, ID = -2.9A, RG = 6.0, RD = 3.4 N-Channel VGS = 0V, VDS = 15V, = 1.0MHz pF P-Channel VGS = 0V, VDS = -15V, = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 2.5 -- -- -2.5 A -- -- 26 -- -- -21 -- 0.72 1.0 TJ = 25C, IS = 1.7A, VGS = 0V V -- -0.78 -1.0 TJ = 25C, IS = -2.9A, VGS = 0V -- 52 77 N-Channel ns -- 47 71 TJ = 25C, IF =1.7A, di/dt = 100A/s -- 58 86 P-Channel nC TJ = 25C, IF = -2.9A, di/dt = 100A/s -- 49 73 Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) Surface mounted on FR-4 board, t 10sec. N-Channel ISD 4.1A, di/dt 92A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -2.9A, di/dt -77A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 12mH RG = 25, IAS = 4.1A. (See Figure 12) P-Channel Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.9A. IRF7317 N-Channel 100 100 VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP TOP 10 1.50V 10 1.50V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 VDS , Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 1 1.5 20s PULSE WIDTH TJ = 150 C 1 0.1 V DS = 10V 20s PULSE WIDTH 2.0 2.5 3.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics TJ = 150 C 10 TJ = 25 C 1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 1.6 IRF7317 RDS (on) , Drain-to-Source On Resistance () R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 N-Channel ID = 6.0A 1.5 1.0 0.5 VGS = 4.5V 0.0 -60 -40 -20 0 20 40 60 0.032 V G S = 2.7V 0.028 0.024 VG S = 4.5V 0.020 80 100 120 140 160 A 0 10 TJ , Junction Temperature( C) 30 I D , Drain C urrent (A) Fig 6. Typical On-Resistance Vs. Drain Current Fig 5. Normalized On-Resistance Vs. Temperature 0.05 300 0.04 0.03 I D = 6.6A 0.02 0.01 A 0 2 4 6 V G S , Gate-to-S ource V oltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 8 EAS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance () 20 TOP 250 BOTTOM ID 1.8A 3.3A 4.1A 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature( C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 150 IRF7317 N-Channel V GS C iss C rss C is s C oss = = = = 10 0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds + C gd -VGS , Gate-to-Source Voltage (V) C , C apacitanc e (pF ) 1600 1200 C os s 800 C rs s 400 0 A 1 10 ID = 6.0A VDS = 10V 8 6 4 2 0 0 100 5 10 15 20 25 30 Q G , Total Gate Charge (nC) V D S , D rain-to-S ource V oltage (V ) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 P DM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7317 100 P-Channel 100 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP TOP 10 -1.50V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 -1.50V 1 0.1 0.1 Fig 12. Typical Output Characteristics 10 Fig 13. Typical Output Characteristics 100 100 -ISD , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) TJ = 25 C TJ = 150 C 10 1 1.5 20s PULSE WIDTH TJ = 150 C V DS = -10V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics 5.0 TJ = 150 C 10 TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage 1.4 IRF7317 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) 2.0 RDS(on) , Drain-to-Source On Resistance ( ) P-Channel I D = -2.9A 1.5 1.0 0.5 V G S = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 0.8 0.6 V G S = -2.7V 0.4 0.2 V G S = -4.5V 0.0 A 140 160 0 4 12 Fig 17. Typical On-Resistance Vs. Drain Current 0.08 0.07 0.06 I D = -5.3A 0.05 0.04 0.03 A 4.0 6.0 V G S , Gate-to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage 8.0 EAS , Single Pulse Avalanche Energy (mJ) 400 2.0 20 -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature 0.0 16 -ID , Drain Current (A) T J , Junction T em perature (C ) RDS(on) , Drain-to-Source On Resistance ( ) 8 ID -1.3A -2.3A BOTTOM -2.9A TOP 300 200 100 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) Fig 19. Maximum Avalanche Energy Vs. Drain Current 150 A IRF7317 10 V GS C is s C rs s C oss 1200 1000 = = = = 0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd -V G S , Gate-to-Source Voltage (V) 1400 C , C apacitanc e (pF ) P-Channel C is s 800 C os s 600 400 C rs s 200 0 A 1 10 100 I D = -2.9A V D S = -16V 8 6 4 2 A 0 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) - -V D S , D rain-to-S ource V oltage (V ) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 P DM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7317 Package Outline SO8 Outline DIM D -B- 5 8 7 6 5 1 2 3 0.25 (.010) 4 e 6X M A M MAX .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 -C- 0.10 (.004) L 8X A1 B 8X C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e1 A 0.25 (.010) MIN A e K x 45 e1 6 C 8X M C A S B S MILLIMETERS MAX 5 H E -A- INCHES MIN .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 0 8 0 8 RECOMMENDED FOOTPRINT NOTES: 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6.46 ( .255 ) DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X Part Marking Information SO8 E X A M P L E : T H IS IS A N IR F 7 1 0 1 312 IN T E R N A T IO N A L R E C T IF IE R LOGO D A T E C O D E (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X F7101 TOP PART NUMBER W AFER LO T CODE (L A S T 4 D IG IT S ) BO TTO M IRF7317 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) TE R M IN AL N U M B ER 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IR EC T IO N N O TE S : 1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 8 1 & E IA -54 1 . 330.00 (12.992) M A X. 14.40 ( .566 ) 12.40 ( .488 ) N O T ES : 1. C O N T RO LL IN G D IM E N SIO N : M ILLIM ET ER . 2. O U T LIN E C O N F O R M S T O EIA-48 1 & E IA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 12/97