1165913 Complementary silicon power transistors. The 2N6609 powerbaseTM power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. Features: * * * * * (TO-3) Pb-free packages. High safe operating area (100% tested) 150W at 100V. Completely characterized for linear operation. High DC current gain and low saturation voltage hFE = 15 (minimum) at 8.0A, 4.0V VCE (sat) = 1.4V (maximum) at IC = 8.0A, IB = 0.8A. For low distortion complementary designs. Dimensions A Maximum 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.40) 0.070 (1.77) G 0.430 (10.92) BSC H 0.215 (5.46) BSC K Style 1: Pin 1. Base 2. Emitter Collector (Case) Minimum L 0.440 (11.18) 0.665 (16.89) BSC - 0.830 (21.08) Q 0.151 (3.84) 0.165 (4.19) V TO-3 Case 1-07 0.480 (12.19) N U 16A Complementary Power Transistors 140V, 150W 1.187 (30.15) BSC 0.131 (3.33) 0.188 (4.77) Dimensions : Inches (Millimetres) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 22/10/08 V1.1 1165913 Maximum Ratings (Note 1) Rating Symbol Value Collector-Emitter Voltage VCEO 140 Collector-Emitter Voltage VCEX Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 7 IC 16 30 Base Current - Continuous - Peak (Note 2) IB 4 15 Total Power Dissipation at TA = 25C Derate above 25C PD 150 0.855 W W/C TJ, Tstg -65 to +200 C Collector Current - Continuous - Peak (Note 2) Operating and Storage Junction Temperature Range Unit 160 V dc A dc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Electrical Characteristics Symbol Maximum Unit RJC 1.17 C/W (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Collector-Emitter Breakdown Voltage (Note 4) (lC = 0.2A dc, lB = 0) VEO (sus) 140 - Collector-Emitter Sustaining Voltage (Note 4) (lC = 0.1A dc, VBE (off) = 1.5V dc, RBE = 100) VCEX (sus) 160 - Collector-Emitter Sustaining Voltage (lC = 0.2A dc, RBE = 100) VCER (sus) 150 - Collector Cut off Current (Note 4) (VCE = 120V dc, IB = 0) ICEO - 10 Collector Cut off Current (Note 4) (VCE = 140V dc VBE (off) = 1.5V dc) (VCE = 140V dc VBE (off) = 1.5V dc, TC = 150C) ICEX - 2 10 Collector Cut off Current (VCB = 140V dc, IE = 0) ICBO - 2 Emitter Cut off Current (Note 4) (VBE = 7V dc, IC = 0) IEBO - 5 Unit Off Characteristics (Note 3) V dc mA dc http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 22/10/08 V1.1 1165913 Electrical Characteristics (TC = 25C unless otherwise noted) On Characteristic (Note 3) DC Current Gain (lC = 8A dc, VCE = 4V dc) (Note 4) (lC = 16A dc, VCE = 4V dc) hFE 15 5 60 - Collector-Emitter Saturation Voltage (lC = 8A dc, IB = 800mA dc) (Note 4) (lC = 16A dc, IB = 3.2A dc) VCE (sat) - 1.4 4 Base-Emitter On Voltage (Note 4) (lC = 8A dc, VCE = 4V dc) VBE (on) - 2.2 hfe 4 - - hfe 40 - - IS/b 1.5 - A dc - V dc Dynamic Characteristics Magnitude of Common-Emitter Small-Signal, Short-Circuit, Forward Current Transfer Ratio (lC = 1A, f = 50kHz) Small-Signal Current Gain (Note 4) (IC = 1A dc, VCE = 4V dc, f = 1kHz) Second Breakdown Characteristics Second Breakdown Collector Current with Base Forward Biased t = 1s (non-repetitive), VCE = 100V 3. Pulse Test : Pulse Width = 300s, Duty Cycle 2.0%. 4. Indicates JEDEC Registered Data. DC Current Gain hFE, DC Current Gain VCE, Collector-Emitter Voltage (Volts) Collector Saturation Region IC, Collector Current (Amperes) IB, Base Current (Amperes) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 22/10/08 V1.1 1165913 Forward Bias Safe Operating Area V, Voltage (Volts) IC, Collector Current (Amperes) "On" Voltage VCE, Collector-Emitter Voltage (Volts) IC, Collector Current (Amperes) Power Derating Factor (%) Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data is based on TJ (pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (pk) <200C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC, Case Temperature (C) Part Number Table Description Part Number Transistor, PNP, TO-3 MJ2955 Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2008. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <4> 22/10/08 V1.1