IXTY1N120P IXTA1N120P IXTP1N120P PolarTM Power MOSFETs VDSS ID25 RDS(on) = 1200V = 1A 20 TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 1.0 1.8 A A IA TC = 25C 1.0 A EAS TC = 25C 100 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 63 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 C C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1200 VGS(th) VDS = VGS, ID = 50A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V VGS = 10V, ID = 0.5 * ID25, Notes 1, 2 (c) 2012 IXYS CORPORATION, All Rights Reserved 4.5 V 50 nA 5 A 200 A TJ = 125C RDS(on) High Power Density Easy to Mount Space Savings 15.5 20 Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications DS99870B(06/12) IXTY1N120P IXTA1N120P IXTP1N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 0.5 * ID25, Note 1 0.55 0.92 S 445 pF 25 pF 5.4 pF 20 ns VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 28 ns 54 ns RG = 30 (External) 27 ns 17.6 nC 3.5 nC 10.6 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 2.00 C/W RthJC RthCS TO-252 AA Outline TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1.0 A ISM Repetitive, Pulse Width Limited by TJM 3.0 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1.0A, VGS = 0V,-di/dt = 100A/s VR = 100V 900 ns 1. Gate 2. Drain 3. Source 4. Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 Outline Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. On through-hole package, RDS(on) Kelvin test contact location must be 5mm or less from the package body. TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY1N120P IXTA1N120P IXTP1N120P Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Output Characteristics @ T J = 125C 1 1.4 VGS = 10V 7V 1.2 VGS = 10V 6V 0.9 0.8 0.7 6V ID - Amperes ID - Amperes 1 0.8 0.6 0.6 0.5 5V 0.4 0.3 0.4 0.2 5V 0.2 0.1 0 0 0 5 10 15 20 25 0 30 5 10 15 VDS - Volts 20 25 Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature 35 40 Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 2.4 2.8 VGS = 10V VGS = 10V 2.2 2.4 TJ = 125C I D = 1.0A R DS(on) - Normalized R DS(on) - Normalized 30 VDS - Volts 2.0 1.6 I D = 0.5A 1.2 2.0 1.8 1.6 1.4 TJ = 25C 1.2 0.8 1.0 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.1 0.8 1 0.7 0.9 0.6 ID - Amperes ID - Amperes 0.8 0.7 0.6 0.5 0.5 TJ = 125C 25C - 40C 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade (c) 2012 IXYS CORPORATION, All Rights Reserved 100 125 150 3.0 3.5 4.0 4.5 VGS - Volts 5.0 5.5 6.0 IXTY1N120P IXTA1N120P IXTP1N120P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 3 1.6 TJ = - 40C 1.4 2.5 IS - Amperes g f s - Siemens 1.2 25C 1 0.8 125C 0.6 2 1.5 TJ = 125C TJ = 25C 1 0.4 0.5 0.2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.3 0.4 0.5 0.6 ID - Amperes 0.8 0.9 1.0 1.1 1.2 Fig. 10. Capacitance Fig. 9. Gate Charge 1,000 9 VDS = 600V 8 I D = 0.5A Capacitance - PicoFarads 10 I G = 10mA 7 VGS - Volts 0.7 VSD - Volts 6 5 4 3 Ciss 100 Coss 10 2 Crss f = 1 MHz 1 1 0 0 2 4 6 8 10 12 14 16 0 18 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - C / W 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXT_1N120P (2A) 4-01-08-A