© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 1.0 A
IDM TC= 25°C, Pulse Width Limited by TJM 1.8 A
IATC= 25°C 1.0 A
EAS TC= 25°C 100 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C63 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
PolarTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTY1N120P
IXTA1N120P
IXTP1N120P
VDSS = 1200V
ID25 = 1A
RDS(on) ≤≤
≤≤
≤ 20ΩΩ
ΩΩ
Ω
DS99870B(06/12)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1200 V
VGS(th) VDS = VGS, ID = 50μA 2.5 4.5 V
IGSS VGS = ± 20V, VDS = 0V ±50 nA
IDSS VDS = VDSS, VGS = 0V 5 μA
TJ = 125°C 200 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 15.5 20 Ω
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
TO-263 AA (IXTA)
G
S
D (Tab)
TO-252 (IXTY)
G
S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
GDS
TO-220AB (IXTP)
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1N120P IXTA1N120P
IXTP1N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 30V, ID = 0.5 • ID25, Note 1 0.55 0.92 S
Ciss 445 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 25 pF
Crss 5.4 pF
td(on) 20 ns
tr 28 ns
td(off) 54 ns
tf 27 ns
Qg(on) 17.6 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 3.5 nC
Qgd 10.6 nC
RthJC 2.00 °C/W
RthCS TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 1.0 A
ISM Repetitive, Pulse Width Limited by TJM 3.0 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 900 ns
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole package, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30Ω (External)
IF = 1.0A, VGS = 0V,-di/dt = 100A/μs
VR = 100V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-252 AA Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
TO-263 Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
© 2012 IXYS CORPORATION, All Rights Reserved
IXTY1N120P IXTA1N120P
IXTP1N120P
Fig . 1. Outp u t C har act er i s ti cs @ T
J
= 25ºC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 5 10 15 20 25 30
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fi g. 2. Ou tpu t C har act er i st i cs @ T
J
= 125ºC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 5 10 15 20 25 30 35 40
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
6V
5V
Fig. 3. R
DS(on)
Normalized to I
D
= 0.5A Value vs.
Junction Tem perature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Deg rees Cen tig rade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 1.0A
I
D
= 0.5A
Fig. 4. R
DS(on)
Normalized to I
D
= 0.5A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4
I
D
- A mperes
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Input Admittance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- V olts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fi g. 5. Maximum D rai n C u r ren t vs.
Case Tempe r atu r e
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
-50 -25 0 25 50 75 100 125 150
T
C
- Deg rees Cen tig rade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1N120P IXTA1N120P
IXTP1N120P
IXYS REF: IXT_1N120P (2A) 4-01-08-A
Fig. 7. Transconductance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
I
D
- A mpere s
g f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
0.5
1
1.5
2
2.5
3
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16 18
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 600V
I
D
= 0. 5A
I
G
= 10mA
Fi g . 10. C ap aci tan ce
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 11. Maxi mu m Tran si en t Ther mal I mp ed an ce
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
