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NXP Semiconductors
BFR92A
NPN 5 GHz wideband transistor
Rev. 04 — 2 March 2009 Product data sheet
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
FEATURES
High power gain
Low noise figure
Low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector Fig.1 SOT23.
p
age
MSB003
Top view
12
3
Marking code: P2%.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage 20 V
VCEO collector-emitter voltage 15 V
ICcollector current (DC) 25 mA
Ptot total power dissipation Ts95 °C300 mW
Cre feedback capacitance IC=i
c= 0; VCE = 10 V; f = 1 MHz 0.35 pF
fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 5 GHz
GUM maximum unilateral power gain IC= 15 mA; VCE = 10 V; f = 1 GHz;
Tamb =25°C14 dB
IC= 15 mA; VCE = 10 V; f = 2 GHz;
Tamb =25°C8dB
F noise figure IC= 5 mA; VCE = 10 V; f = 1 GHz;
Γs=Γopt; Tamb =25°C2.1 dB
VOoutput voltage dim =60 dB; IC= 14 mA; VCE =10V;
R
L=75;f
p+f
qf
r= 793.25 MHz 150 mV
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2V
I
Ccollector current (DC) 25 mA
Ptot total power dissipation Ts95 °C; note 1; see Fig.3 300 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 175 °C
Rev. 04 - 2 March 2009
2 of 12
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and .
2. Measured on the same die in a SOT37 package (BFR90A).
3. dim =60 dB (DIN 45004B); IC= 14 mA; VCE = 10 V; RL=75; VSWR <2; Tamb =25°C
V
p=V
O
at dim =60 dB; fp= 795.25 MHz;
Vq=V
O6 dB; fq= 803.25 MHz;
Vr=V
O6 dB; fr= 805.25 MHz;
measured at fp+f
qf
r= 793.25 MHz.
4. IC= 14 mA; VCE = 10 V; RL=75; VSWR <2; Tamb =25°C
V
p= 60 mV at fp= 250 MHz;
Vq= 60 mV at fq= 560 MHz;
measured at fp+f
q= 810 MHz.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts95 °C; note 1 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector leakage current IE= 0; VCB =10V −−50 nA
hFE DC current gain IC= 15 mA; VCE = 10 V; see Fig.4 65 90 135
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz;
see Fig.5 0.6 pF
Ceemitter capacitance IC=i
c= 0; VEB = 10 V; f = 1 MHz 1.2 pF
Cre feedback capacitance IC=i
c= 0; VCE = 10 V; f = 1 MHz 0.35 pF
fTtransition frequency IC= 15 mA; VCE = 10 V ; f = 500 MHz;
see Fig.6 5GHz
GUM maximum unilateral power
gain (note 1) IC= 15 mA; VCE = 10 V; f = 1 GHz;
Tamb =25°C14 dB
IC= 15 mA; VCE = 10 V; f = 2 GHz;
Tamb =25°C8dB
F noise figure IC= 5 mA; VCE = 10 V; f = 1 GHz;
Γs=Γopt; Tamb =25°C;
see Figs 13 and 14
2.1 dB
IC= 5 mA; VCE = 10 V; f = 2 GHz;
Γs=Γopt; Tamb =25°C;
see Figs 13 and 14
3dB
VOoutput voltage notes 2 and 3 150 mV
d2second order intermodulation
distortion notes 2 and 4; see Fig.16 −−50 dB
GUM 10 log
S
21 2
1
S
11 2


1
S
22 2


-------------------------------------------------------------- dB
˙
=
Rev. 04 - 2 March 2009
3 of 12
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
L1=L3=5µH choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
handbook, full pagewidth
MBB269
18
2.2 nF
33 k L2
L1
1 nF
75
input
300
1 nF
L3
2.2 nF
1 nF
0.82 pF
3.3 pF
DUT 75
output
VCC
VBB
Fig.3 Power derating curve.
handbook, halfpage
0 50 100 200
400
300
100
0
200
MEA425 - 1
150
Ptot
(mW)
Ts(oC)
Fig.4 DC current gain as a function of collector
current; typical values.
VCE = 10 V; Tj=25°C.
handbook, halfpage
0102030
120
0
40
80
MCD074
hFE
I (mA)
C
Rev. 04 - 2 March 2009
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
IC=i
c= 0; f = 1 MHz; Tj=25°C.
handbook, halfpage
0 5 10 20
1
0
0.8
MBB274
15
0.6
0.4
0.2
Cc
(pF)
VCB (V)
Fig.6 Transition frequency as a function of
collector current; typical values.
VCE = 10 V; f = 500 MHz; Tamb =25°C.
handbook, halfpage
0102030
6
0
2
4
MBB275
I (mA)
C
fT
(GHz)
Fig.7 Gain as a function of collector current;
typical values.
VCE = 10 V; f = 500 MHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
handbook, halfpage
0
30
20
10
025
MBB278
510
15 20
gain
(dB)
IC (mA)
MSG
GUM
Fig.8 Gain as a function of collector current;
typical values.
VCE = 10 V; f = 1 GHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
handbook, halfpage
0
30
20
10
025
MBB279
5101520
gain
(dB)
I (mA)
C
MSG
GUM
Rev. 04 - 2 March 2009
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
Fig.9 Gain as a function of frequency;
typical values.
IC= 5 mA; VCE =10V.
G
UM = maximum unilateral power gain; MSG = maximum stable gain;
Gmax = maximum available gain.
handbook, halfpage
50
010
MBB280
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.10 Gain as a function of frequency;
typical values.
IC= 15 mA; VCE =10V.
G
UM = maximum unilateral power gain; MSG = maximum stable gain;
Gmax = maximum available gain.
handbook, halfpage
50
010
MBB281
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.11 Circles of constant noise figure;
typical values.
IC= 4 mA; VCE = 10 V; f = 800 MHz.
handbook, halfpage
02040 80
40
20
20
40
0
MBB277
60 G (mS)
S
BS
(mS)
1.8
2.5
1.7
2.0
F = 3.0 dB
Fig.12 Circles of constant noise figure;
typical values.
IC= 14 mA; VCE = 10 V; f = 800 MHz.
handbook, halfpage
0
0
10
20
30 20 40 60
MBB276
G (mS)
S
BS
(mS)
10
20
30
2.4
2.5
3.0
F = 3.5 dB
Rev. 04 - 2 March 2009
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
Fig.13 Minimum noise figure as a function of
collector current; typical values.
VCE =10V.
handbook, halfpage
4
2
1
0
MCD081
101
3
F
(dB)
I (mA)
C
f = 2 GHz
1 GHz
500 MHz
102
Fig.14 Minimum noise figure as a function of
frequency; typical values.
VCE =10V.
handbook, halfpage
4
2
1
0
MCD082
3
F
(dB)
f (MHz) 104
103
102
I = 15 mA
C
5 mA
10 mA
Fig.15 Intermodulation distortion;
typical values.
VCE = 10 V; VO= 150 mV (43.5 dBmV);
fp+f
q
f
r= 793.25 MHz; Tamb =25°C.
Measured in MATV test circuit (see Fig.2).
handbook, halfpage
10 30
45
70
65
MBB282
60
55
50
20
dim
(dB)
I (mA)
C
Fig.16 Second order intermodulation distortion;
typical values.
VCE = 10 V; VO= 60 mV; fp+f
q
f
r= 810 MHz; Tamb =25°C.
Measured in MATV test circuit (see Fig.2).
handbook, halfpage
10 30
35
60
55
MBB283
50
45
40
20
d2
(dB)
I (mA)
C
Rev. 04 - 2 March 2009
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
Fig.17 Common emitter input reflection coefficient (S11); typical values.
IC= 14 mA; VCE = 10 V; Zo=50; Tamb =25°C.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
MBB270
1200
800
500
+ j
j
10.2 10520.5
1000
200
100 MHz
Fig.18 Common emitter forward transmission coefficient (S21); typical values.
IC= 14 mA; VCE = 10 V; Tamb =25°C.
handbook, full pagewidth
MBB273
30°
60°
90°
120°
150°
180°
150°
120°
90°
60°
30°
200
500
0°
+ ϕ
ϕ
10 20 30
800
1000 1200
100
MHz
Rev. 04 - 2 March 2009
8 of 12
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
Fig.19 Common emitter reverse transmission coefficient (S12); typical values.
IC= 14 mA; VCE = 10 V; Tamb =25°C.
handbook, full pagewidth
MBB271
0°
30°
60°
90°
120°
150°
180°
150°
120°
90°
60°
30°
1200 MHz
+ ϕ
ϕ
0.150.05 0.1
200
500
800
1000
typ
100
Fig.20 Common emitter output reflection coefficient (S22); typical values.
IC= 14 mA; VCE = 10 V; Zo=50; Tamb =25°C.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
MBB272
800
0
+ j
j
10.2 10520.5
1200
1000 500
200 100
MHz
Rev. 04 - 2 March 2009
9 of 12
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
Rev. 04 - 2 March 2009
10 of 12
NXP Semiconductors BFR92A
NPN 5 GHz wideband transistor
Legal information
Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
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intellectual property rights infringement and limitation of liability, unless
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Rev. 04 - 2 March 2009
11 of 12
NXP Semiconductors BFR92A
NPN 5 GHz wideband transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 March 2009
Document identifier: BFR92A_N_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFR92A_N_4 20090302 Product data sheet - BFR92A_N_3
Modifications: Fig.1 on page 2; Figure note changed
BFR92A_N_3 20080307 Product data sheet - BFR92A_2
BFR92A_2
(9397 750 02766) 19971029 Product specification - BFR92A_1
BFR92A_1 19950901 - - -