BFR92A NPN 5 GHz wideband transistor Rev. 04 -- 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A FEATURES DESCRIPTION * High power gain NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92. * Low noise figure * Low intermodulation distortion. 3 page PINNING APPLICATIONS * RF wideband amplifiers and oscillators. PIN 1 Top view DESCRIPTION 1 base 2 emitter 3 collector 2 MSB003 Marking code: P2%. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage - 20 V VCEO collector-emitter voltage - 15 V IC collector current (DC) - 25 mA Ptot total power dissipation Ts 95 C - 300 mW Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz 0.35 - pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 5 - GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 14 - dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C 8 - dB F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt; Tamb = 25 C 2.1 - dB VO output voltage dim = -60 dB; IC = 14 mA; VCE = 10 V; RL = 75 ; fp + fq - fr = 793.25 MHz 150 - mV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector - 2 V IC collector current (DC) - 25 mA Ptot total power dissipation - 300 mW Tstg storage temperature -65 +150 C Tj junction temperature - 175 C Ts 95 C; note 1; see Fig.3 Note 1. Ts is the temperature at the soldering point of the collector pin. Rev. 04 - 2 March 2009 2 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts 95 C; note 1 VALUE UNIT 260 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - TYP. - MAX. ICBO collector leakage current IE = 0; VCB = 10 V hFE DC current gain IC = 15 mA; VCE = 10 V; see Fig.4 65 90 135 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz; see Fig.5 - 0.6 - pF Ce emitter capacitance IC = ic = 0; VEB = 10 V; f = 1 MHz - 1.2 - pF Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz - 0.35 - pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz; see Fig.6 - 5 - GHz GUM maximum unilateral power gain (note 1) IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C - 14 - dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C - 8 - dB IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt; Tamb = 25 C; see Figs 13 and 14 - 2.1 - dB IC = 5 mA; VCE = 10 V; f = 2 GHz; s = opt; Tamb = 25 C; see Figs 13 and 14 - 3 - dB F noise figure 50 UNIT nA VO output voltage notes 2 and 3 - 150 - mV d2 second order intermodulation distortion notes 2 and 4; see Fig.16 - -50 - dB Notes 2 S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB . 2 2 1 - S 11 1 - S 22 2. Measured on the same die in a SOT37 package (BFR90A). 3. dim = -60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 ; VSWR < 2; Tamb = 25 C Vp = VO at dim = -60 dB; fp = 795.25 MHz; Vq = VO -6 dB; fq = 803.25 MHz; Vr = VO -6 dB; fr = 805.25 MHz; measured at fp + fq - fr = 793.25 MHz. 4. IC = 14 mA; VCE = 10 V; RL = 75 ; VSWR < 2; Tamb = 25 C Vp = 60 mV at fp = 250 MHz; Vq = 60 mV at fq = 560 MHz; measured at fp + fq = 810 MHz. Rev. 04 - 2 March 2009 3 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A 2.2 nF handbook, full pagewidth 2.2 nF VCC VBB L3 33 k L2 1 nF 1 nF L1 1 nF 75 input 300 DUT 18 3.3 pF 75 output 0.82 pF MBB269 L1 = L3 = 5 H choke. L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm. Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit. MEA425 - 1 MCD074 120 400 handbook, halfpage handbook, halfpage Ptot (mW) h FE 300 80 200 40 100 0 0 0 50 100 150 0 200 10 Ts ( o C) 20 I C (mA) 30 VCE = 10 V; Tj = 25 C. Fig.4 DC current gain as a function of collector current; typical values. Rev. 04 - 2 March 2009 4 of 12 Fig.3 Power derating curve. NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MBB274 1 MBB275 6 handbook, halfpage handbook, halfpage Cc (pF) fT (GHz) 0.8 4 0.6 0.4 2 0.2 0 0 0 5 10 15 VCB (V) 20 0 10 20 IC = ic = 0; f = 1 MHz; Tj = 25 C. VCE = 10 V; f = 500 MHz; Tamb = 25 C. Fig.5 Fig.6 Collector capacitance as a function of collector-base voltage; typical values. MBB278 handbook,30 halfpage gain I C (mA) 30 Transition frequency as a function of collector current; typical values. MBB279 handbook,30 halfpage gain (dB) MSG (dB) 20 20 MSG G UM G UM 10 10 0 0 5 10 15 20 0 25 IC (mA) 0 5 10 15 VCE = 10 V; f = 500 MHz. MSG = maximum stable gain; GUM = maximum unilateral power gain. VCE = 10 V; f = 1 GHz. MSG = maximum stable gain; GUM = maximum unilateral power gain. Fig.7 Fig.8 Gain as a function of collector current; typical values. Rev. 04 - 2 March 2009 25 20 I C (mA) Gain as a function of collector current; typical values. 5 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor MBB280 handbook,50 halfpage BFR92A MBB281 handbook,50 halfpage gain gain (dB) (dB) 40 40 G UM G UM 30 30 MSG MSG 20 20 G max 10 10 G max 0 102 10 103 f (MHz) 0 104 IC = 5 mA; VCE = 10 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.9 10 102 103 f (MHz) 104 IC = 15 mA; VCE = 10 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Gain as a function of frequency; typical values. Fig.10 Gain as a function of frequency; typical values. MBB277 MBB276 30 40 handbook, halfpage handbook, halfpage B S (mS) BS (mS) F = 3.5 dB 20 3.0 20 F = 3.0 dB 10 2.5 2.5 0 1.8 0 2.0 2.4 10 1.7 20 20 30 40 0 20 40 60 80 G S (mS) IC = 4 mA; VCE = 10 V; f = 800 MHz. Fig.11 Circles of constant noise figure; typical values. 0 20 40 60 G S (mS) IC = 14 mA; VCE = 10 V; f = 800 MHz. Fig.12 Circles of constant noise figure; typical values. Rev. 04 - 2 March 2009 6 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MCD081 4 MCD082 4 handbook, halfpage handbook, halfpage f = 2 GHz F (dB) I C = 15 mA F (dB) 3 10 mA 3 5 mA 1 GHz 500 MHz 2 2 1 1 0 1 10 0 10 2 10 2 I C (mA) 10 3 f (MHz) 10 4 VCE = 10 V. VCE = 10 V. Fig.13 Minimum noise figure as a function of collector current; typical values. Fig.14 Minimum noise figure as a function of frequency; typical values. MBB282 -45 -50 d2 (dB) -40 -55 -45 -60 -50 -65 -55 d im (dB) -70 10 MBB283 -35 handbook, halfpage handbook, halfpage 20 I C (mA) VCE = 10 V; VO = 150 mV (43.5 dBmV); fp + fq-fr = 793.25 MHz; Tamb = 25 C. Measured in MATV test circuit (see Fig.2). Fig.15 Intermodulation distortion; typical values. 30 -60 10 20 I C (mA) 30 VCE = 10 V; VO = 60 mV; fp + fq-fr = 810 MHz; Tamb = 25 C. Measured in MATV test circuit (see Fig.2). Fig.16 Second order intermodulation distortion; typical values. Rev. 04 - 2 March 2009 7 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1200 1000 -j 1 2 5 10 800 500 10 200 5 0.2 100 MHz 2 0.5 MBB270 1 IC = 14 mA; VCE = 10 V; Zo = 50 ; Tamb = 25 C. Fig.17 Common emitter input reflection coefficient (S11); typical values. 90 handbook, full pagewidth 120 150 100 MHz 60 30 200 500 800 1200 1000 180 + 10 20 30 0 - 30 150 60 120 90 MBB273 IC = 14 mA; VCE = 10 V; Tamb = 25 C. Fig.18 Common emitter forward transmission coefficient (S21); typical values. Rev. 04 - 2 March 2009 8 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A 90 handbook, full pagewidth 120 60 1200 MHz typ 150 1000 30 800 500 + 200 100 180 0.05 0.1 0.15 0 - 30 150 60 120 MBB271 90 IC = 14 mA; VCE = 10 V; Tamb = 25 C. Fig.19 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 -j 2 5 10 1000 800 500 1200 100 200 MHz 0.2 10 5 2 0.5 1 MBB272 IC = 14 mA; VCE = 10 V; Zo = 50 ; Tamb = 25 C. Fig.20 Common emitter output reflection coefficient (S22); typical values. Rev. 04 - 2 March 2009 9 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT23 Rev. 04 - 2 March 2009 10 of 12 BFR92A NXP Semiconductors NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Rev. 04 - 2 March 2009 11 of 12 BFR92A NXP Semiconductors NPN 5 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFR92A_N_4 20090302 Product data sheet - BFR92A_N_3 Modifications: * Fig.1 on page 2; Figure note changed BFR92A_N_3 20080307 Product data sheet - BFR92A_2 BFR92A_2 (9397 750 02766) 19971029 Product specification - BFR92A_1 BFR92A_1 19950901 - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 March 2009 Document identifier: BFR92A_N_4