2SC4793
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications
Driver Stage Amplifier Applications
• High transition frequency: fT = 100 MHz (typ.)
• Complementary to 2SA1837
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 230 V
Collector-emitter voltage VCEO 230 V
Emitter-base voltage VEBO 5 V
Collector current IC 1 A
Base current IB 0.1 A
Ta = 25°C 2.0
Collector power
dissipation Tc = 25°C
PC 20
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-10R1A
Weight: 1.7 g (typ.)
2SC4793
2006-11-10
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Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 230 V, IE = 0 ― ― 1.0 μA
Emitter cut-off current IEBO V
EB = 5 V, IC = 0 ― ― 1.0 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 230 ― ― V
DC current gain hFE V
CE = 5 V, IC = 100 mA 100 ― 320
Collector-emitter saturation voltage VCE (sat) I
C = 500 mA, IB = 50 mA ― ― 1.5 V
Base-emitter voltage VBE V
CE = 5 V, IC = 500 mA ― ― 1.0 V
Transition frequency fT V
CE = 10 V, IC = 100 mA ― 100 ― MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF
Marking
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
C4793
Part No. (or abbreviation code)
2SC4793
2006-11-10
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector current IC (A)
VCE (sat) – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
fT – IC
Transition frequency fT (MHz)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
1.0
0
0
Common emitter
Tc = 25°C
0.8
0.6
0.4
0.2
2 4 6 8 10
20
IB = 2 mA
4
6
8
10
−25
1.0
0
0
Common emitter
VCE = 5 V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.2
0.4
0.6
0.8
Tc = 100°C 25
500
10
5
Common emitter
VCE = 10 V
Tc = 25°C
30
50
100
300
100010 30 100 300
1
0.003
0.01
0.03
0.05
0.1
0.3
0.5
0.01 0.03 0.1 0.3 1 3
Common emitter
IC/IB = 10
−25
Tc = 100°C
25
1000
0.003
10
30
50
100
300
500
0.01 0.03 0.1 0.3 1 3
Common emitter
VCE = 5 V
Tc = 100°C
25
−25
5
0.01
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
3 10 30 100 300
0.03
0.05
0.1
0.3
0.5
1
3
IC max (pulsed)*
IC max (continuous)
DC operation
Tc = 25°C
100 ms*
10 ms*
1 ms*
VCEO max
2SC4793
2006-11-10
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
