T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 1 of 6
1N11 84, 1N1 18 6, 1 N 1 1 88, 1N11 9 0,
1N37 66 an d 1N3 76 8 (R )
Available on
commercial
versions
High Reliability Silicon Power Rectifie r
Qualified per MIL-PRF-19500/297
Quali f i ed Lev els:
JAN , JANTX, and
JANTXV
DESCRIPTION
This series of s
ilicon power rectifier part numbers are qualified up to the JANTXV level for high
reli ability ap pli cations. They are constructed with glass pass i vated die and feature glass to
metal seal constr uc tion. They have a 500 amp surge rating and pr ovide a VRWM up t o 1000
volts.
DO-5 (DO-203AB)
Package
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
High continuous current rating.
Very low forward voltage.
Low thermal resistance.
JAN, JANTX and JANTXV qualifications are available per MIL-PRF-19500/297.
RoHS com pliant devices available (commercial grade only).
APPLICATIONS / BENE FITS
High frequency switching circuits.
Mechanically rugged DO-5 package.
MAXI MUM RATINGS @ TA = +25 ºC un less otherwise stat ed
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Case
RӨJC
0.8
oC/W
Working Peak Reverse Vol tage 1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
V
RWM
100
200
400
600
800
1000
V
Maximum Average DC Output Current @ TC = 150 oC (1)
IO
35
A
Non-Repetitive Sinusoi dal Surge Current @ 1/120 s,
TC = 150 ºC
IFSM 500 A
NOTE: 1. Derate linearly 1.4 A ºC between TC = 150 ºC to TC = 175 ºC.
T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 2 of 6
1N11 84, 1N1 18 6, 1 N 1 1 88, 1N11 9 0,
1N37 66 an d 1N3 76 8 (R )
M ECHANICAL and PACKAGING
CASE: Hermetically sealed metal and glass case body.
TERMINALS: Hot solder dip (Sn63/Pb37) on standard commercial, JAN, JANTX, and JANTXV levels. RoHS compliant matte-tin
on nickel is available on co mmerc ial grade only.
MARKING: Polarity symbol and part number.
POLARITY: Standard polarity devices are cathode to stud. Reverse polarity devices are anode to stud.
WEIGHT: Approximately 14 grams.
See P ackage Dimensions on last page.
PART NOMENCLATURE
JAN 1N1184 R e3
JAN = JAN lev el
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial
JEDEC type number
(see Electrical
Characteristics table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Polarity
R = Anode to Stud
Blank = Cathode to Stud
SYMBOL S & DEFI NITIONS
Symbol
Definition
IF
Forward Current: The forward current dc value, no alternating component.
IFSM
Maximum Forward Surge Current: The forward current, surge peak or rated forward surge current.
IO
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle.
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
VF
Maximum Forward Voltage: The maximum forward voltage the devi ce will exhibit at a specified current.
VRWM
Working Peak Reverse Vol tage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 3 of 6
1N11 84, 1N1 18 6, 1 N 1 1 88, 1N11 9 0,
1N37 66 an d 1N3 76 8 (R )
ELECTRI CAL CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Forward Voltag e
IF = 11 0 A, TC = 25 °C
(1)
VF 1.4 V
Forward Voltag e
IF = 50 0 A, TC = 150 °C (2) VF 2.3 V
Rev er se Curren t
V
RWM
= 100 V, T
J
= 25 °C
VRWM = 200 V, TJ = 25 °C
VRWM = 400 V, TJ = 25 °C
VRWM = 600 V, TJ = 25 °C
VRWM = 800 V, TJ = 25 °C
VRWM = 1000 V, TJ = 25 °C
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
IR 10 µA
Rev er se Curren t
V
RWM
= 100 V, T
J
= 150 °C
VRWM = 200 V, TJ = 150 °C
VRWM = 400 V, TJ = 150 °C
VRWM = 600 V, TJ = 150 °C
VRWM = 800 V, TJj = 150 °C
VRWM = 1000 V, TJ = 150 °C
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
IR 1 mA
NOTES:
1. tp < 8.3 ms, duty cycle ≤ 2 percent pulse.
2. VF1 shall be performed with either tp = 800 μs or tp = 8.3 ms.
T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 4 of 6
1N11 84, 1N1 18 6, 1 N 1 1 88, 1N11 9 0,
1N37 66 an d 1N3 76 8 (R )
GRAPHS
I nstant aneous F or ward V ol tage - Volts
FIGURE 1
Typic al Forward Characteristi cs
Rev er se V ol tage - Volts
FIGURE 2
Typical Reverse C haracteristi cs
Instantaneous Forward Current - Amperes
Typical Reverse Current - mA
T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 5 of 6
1N11 84, 1N1 18 6, 1 N 1 1 88, 1N11 9 0,
1N37 66 an d 1N3 76 8 (R )
GRAPHS (continued)
Max imum Allowable Case Temperature -°C
FIGURE 3
Forward Current D er ating
Time in Seconds
FIGURE 4
Transient Therm al Imp edance
Average Forward Current Amperes
Junction to Case
Thernal Impedance - °C/Watts
T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 6 of 6
1N11 84, 1N1 18 6, 1 N 1 1 88, 1N11 9 0,
1N37 66 an d 1N3 76 8 (R )
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Units must not be damaged by torque of 30 inch-pounds applied to 0.250-28 UNF-28 nut assembled on thread.
4. Diameter of unthreaded portion 0.249 inch (6.32 m m) max and .220 inch (5.59 mm) min.
5. Complete threads to extend to withi n 2.5 threads of seating plane.
6. Angular orientation of this terminal is undefined.
7. Max pitch diameter of pl ated threads shall be basic pitch diameter 0.2268 inch (5.76 m m) reference
FED-STD-H28.
8. A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating
plane. 0.600 inch (15.24 mm).
9. In accordance with ASME Y14.5M, diam eters are equivalent to Φx symbology.
Ltr Dimensions
Inch
Millimeters
Min
Max
Min
Max
OAH - 1.000 - 25.40
CH
-
0.450
-
11.43
HT
0.115
0.200
2.93
5.08
SL 0.422 0.453 10.72 11.50
HT1
0.060
-
1.53
-
B
0.250
0.375
6.35
9.52
CD
-
0.667
-
16.94
HF 0.667 0.687 16.95 17.44
J
0.156
-
3.97
-
φT
0.140
0.175
3.56
4.44
C
-
0.080
-
2.03
M
0.030
-
0.77
-