TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per M I L-PR F - 19 5 00/297
• Glass Passivated Die • Glass to Metal Seal Construction
• 500 Amps Surge Rating • VRRM to 1000 Volts
T4-LDS-0138 Rev. 1 (091729) Page 1 of 3
DEVICES LEVELS
1N1184 1N1190 1N1184R 1N1190R JAN
1N1186 1N3766 1N1186R 1N3766R JANTX
1N1188 1N3768 1N1188R 1N3768R JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Peak Reverse Voltage
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
VR
100
200
400
600
800
1000
V
Average Forward Current, TC = 150° IF 35 A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C IFSM 500 A
Thermal Resistance, Junction to Case RθJC 0.8 °C/W
Operating Case Temperature Range Tj -65°C to 175°C °C
Storage Temperature Range TSTG -65°C to 175°C °C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unle ss othe rwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Voltage
IFM = 110A, TC = 25°C* VFM 1.4 V
Forward Voltage
IFM = 500A, TC = 150°C* VFM 2.3 V
Reverse Current
VRM = 100, Tj = 25°C
VRM = 200, Tj = 25°C
VRM = 400, Tj = 25°C
VRM = 600, Tj = 25°C
VRM = 800, Tj = 25°C
VRM = 1000, Tj = 25°C
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
IRM 10
μA
Reverse Current
VRM = 100, Tj = 150°C
VRM = 200, Tj = 150°C
VRM = 400, Tj = 150°C
VRM = 600, Tj = 150°C
VRM = 800, Tj = 150°C
VRM = 1000, Tj = 150°C
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
IRM 1 mA
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
DO-203AB (DO-5)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0138 Rev. 1 (091729) Page 2 of 3
GRAPHS
FIGURE 3
FORWARD CURRENT DERATING
FIGURE 1
TYPICAL FORWARD CHARACTERISTICS
FIGURE 4
TRANSIENT THERMAL IMPEDANCE
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0138 Rev. 1 (091729) Page 3 of 3
PACKAGE DIMENSIONS
Ltr Dimensions
Inches Millimeters
Min Max Min Max
OAH 1.000 25.40
CH .450 11.43
HT .115 .200 2.93 5.08
SL .422 .453 10.72 11.50
HT1 .060 1.53
B .250 .375 6.35 9.52
CD .667 16.94
HF .667 .687 16.95 17.44
J .156 3.97
φT .140 .175 3.56 04.44
C .080 2.03
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 Units must not be damaged by torque of 30 inch-pounds applied to
.250-28 UNF-28 nut assembled on thread.
4 Diameter of unthreaded portion .249 inch (6.32 mm) max and .220 inch
(5.59 mm) min.
5 Complete threads to extend to within 2.5 threads of seating plane.
6 Angular orientation of this terminal is und efined.
7 Max pitch diameter of plated threads shall b e basic pit ch diameter .226 8
inch (5.76 mm) reference FEDSTD-H28.
8 A chamfer or undercut on one or both ends of the hex portion is optional;
minimum base diameter at seating plane. .600 inch (15.24 mm).
9 In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
M .030 0.77
Physical dimensions, (all device types) DO-5
