AAMOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and dc to de converters or inverters. FEATURES: * High Power Dissipation Pp = 150 W (T, = 25C) * High DC Current Gain and Low Saturation Voltage hFE = 15-60 @ 1, =8A, Vo. =4V Vegsat) = 1.4 V (Max.) @ I, = 8A, Ip =0.8A MAXIMUM RATINGS NPN PNP 2N3773 2N6609 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 150 WATTS Characteristic Symbol Rating Unit Coilector-Emitter Voltage Vceoisus) 140 Vv Collector-Emitter Voltage Veex 160 V Collector-Base Voltage Vepo 160 V Emitter-Base Voltage Veno 7 V Collector Current-Continuous Ie 16 A Peak (1) low 30 Base Current-Continuous lp 4.0 A Peak (1) lam 15 Total Power Dissipation @T,=25C 150 Ww Derate above 25C Pp 0.857 wc Operating and Storage Junction Ty. Tst c Temperature Range ~65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Reje 1.17 cw FIGURE -1 POWER DERATING _ = = = an oa Pp, , POWER DISSIPATION(WATTS) nN oa o oO 25 50 75 100 125 150 175 200 Tg, TEMPERATURE(C) (1) Pulse Test: Pulse width =5 ms , Duty Cycle < 10% PIN 1.BASE 2.EMITTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX Aae~TONMIVOW>Y R 8 8 o =~2N3773 NPN/ 2N6609 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vv, Vv (Ig = 200 mA, I, = 0) rears) 140 Coliector Cutoff Current lege mA (Vog = 120 V, I, = 0) 10 Collector Cutoff Current loex mA ( Veg = 140 V, Veciorr) = 1-5 V) 2.0 Collector Cutoff Current lezo mA (Veg = 140 V, Ip = 0) 2.0 Emitter Cutoff Current leno mA (Veg = 7.0 V, 1, =0) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (lp =8.0A, Vee = 4.0V) 15 60 (lp = 16 A, Veg = 4.0 V 5.0 Collector - Emitter Saturation Voltage VeE(saty Vv (1g = 8.0A, I, =800 mA) 1.4 (Ip = 16A, lg =3.2A) 4.0 Base - Emitter On Voltage Vv Vv (le=8.0A, Veg = 4.0V) Been) 2.2 * Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% ACTIVE-REGION SAFE OPERATING AREA (SOA) ~- - Bonding Wire Limit Thermal LimitedT=25C (Single Second Breakdown Limit le , COLLECTOR CURRENT (Amp) 3 5 7 10 20 50 70 = 10 us 40 us 100 us 200 us 1ms t 100 ms 100 140 200 360 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typiq=200 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided TypgS 200C, At high case temperatures, thermal limita - tion will reduce the power that can be handled to vaiues less than the limitations imposed by second breakdown.2N3773 NPN / 2N6609 PNP NPN 2N3773 PNP MJ6609 DC CURRENT GAIN DC CURRENT GAIN 200 200 Tx150C 100 Vou4.0 100 Z 7 = 7 8 50 8 50 E & 2 2 oO oO 9 9 a a 10 10 7 7 5 5 02 03 08 1 2 5 7 10 16 20 0203 08 1 2 5 7 10 16 20 Ic, COLLECTOR CURRENT (AMP) lc, COLLECTOR CURRENT (AMP) COLLECTOR SATURATION REGION COLLECTOR SATURATION REGION 2.0 Ty=28C Ty=28C > oa ~ wb 9g a Vee, COLLECTOR EMITTER VOLTAGE (VOLTS) 2 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) Qo 0.05 0.1 02 03 05 07 10 20 30 0.08 0.1 02 03 05 O07 10 20 30 le, BASE CURRENT (AMPS) ls, BASE CURRENT (AMPS) "ON" VOLTAGES ON" VOLTAGES 2.0 lellg=10 16 leflg=10 a a ri a 12 2 2 ll Ww QO Q < < 5 5 08 s $ > > V, 0.4 25C CE(set) 36C 0 Vee(sat) 02 03 O58 o7 10 20 30 50 7.0 10 20 02 03 05 O7 10 2.0 5.0 7.0 10 20 Ic , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP)