BSP129 SIPMOS(R) Small-Signal-Transistor Product Summary Features VDS * N-channel 240 V 6 W 0.05 A RDS(on),max * Depletion mode IDSS,min * dv /dt rated * Available with V GS(th) indicator on reel * Pb-free lead plating; RoHS compliant PG-SOT223 * Qualified according to AEC Q101 * Halogenfree according to IEC61249221 Type Type BSP129 Package Package PG-SOT223 Tape and Reel Tape and Reel H6327: 1000 pcs/reel Marking Packaging Marking Packaging BSP129 Non dry BSP129 BSP129 PG-SOT223 PG-SOT223 BSP129 Non dry BSP129 Non dry BSP129 PG-SOT223 L6327: 1000 pcs/reel H6906: 1000 pcs/reel 1) sorted1000 in VGS(th) bands L6906: pcs/reel soed BSP129 Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 C 0.35 T A=70 C 0.28 I D,pulse T A=25 C 1.4 Reverse diode dv /dt dv /dt I D=0.36 A, V DS=192 V, di /dt =200 A/s, T j,max=150 C Gate source voltage V GS Pulsed drain current 20 A kV/s V 1A(>250V,<500V) ESD class (JESD22-A114-HBM) Power dissipation P tot Operating and storage temperature T j, T stg T A=25 C IEC climatic category; DIN IEC 68-1 1) 6 Unit 1.8 W -55 ... 150 C 55/150/56 see table on next page and diagram 11 Rev. 1.42 page 1 2012-11-29 BSP129 Parameter Values Symbol Conditions Unit min. typ. max. - - 25 minimal footprint - - 115 6 cm2 cooling area1) - - 70 Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thJS SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 A 240 - - Gate threshold voltage V GS(th) V DS=3 V, I D=108 A -2.1 -1.4 -1 Drain-source cutoff current I D(off) V DS=240 V, V GS=-3 V, T j=25 C - - 0.1 V DS=240 V, V GS=-3 V, T j=125 C - - 10 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current I DSS V GS=0 V, V DS=10 V 50 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=25 mA - 6.5 20 V GS=10 V, I D=0.35 A - 4.2 6.0 |V DS|>2|I D|R DS(on)max, I D=0.28 A 0.18 0.36 - S V DS=3 V, I D=108 A -1.2 - -1 V K -1.35 - -1.15 L -1.5 - -1.3 M -1.65 - -1.45 N -1.8 - -1.6 Transconductance g fs W Threshold voltage V GS(th) sorted in bands3) J V GS(th) 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.42 page 2 2012-11-29 BSP129 Parameter Values Symbol Conditions Unit min. typ. max. - 82 108 - 12 16 Dynamic characteristics Input capacitance C iss V GS=-3 V, V DS=25 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 6 10 Turn-on delay time t d(on) - 4.4 6.6 Rise time tr - 4.1 6.2 Turn-off delay time t d(off) - 22 33 Fall time tf - 35 53 Gate to source charge Q gs - 0.24 0.36 Gate to drain charge Q gd - 1.7 2.6 Gate charge total Qg - 3.8 5.7 Gate plateau voltage V plateau - 0.37 - V - - 0.35 A - - 1.4 - 0.79 1.2 V - 53 80 ns - 65 97 nC V DD=120 V, V GS=-2...5 V, I D=0.2 A, R G=7.6 W ns Gate Charge Characteristics V DD=192 V, I D=0.2 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.42 T A=25 C V GS=-3 V, I F=0.35 A, T j=25 C V R=120 V, I F=0.2 A, di F/dt =100 A/s page 3 2012-11-29 BSP129 2 Drain current P tot=f(T A) I D=f(T A); V GS10 V 2 0.4 1.5 0.3 ID [A] Ptot [W] 1 Power dissipation 1 0.5 0.2 0.1 0 0 0 40 80 120 160 0 40 80 TA [C] 120 160 TA [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 limited by on-state resistance 10 s 0.5 100 100 s ZthJA [K/W] 0.2 ID [A] 1 ms 10-1 10 ms 0.1 101 0.05 single pulse 0.02 0.01 10-2 DC 10-3 100 100 101 102 103 VDS [V] Rev. 1.42 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2012-11-29 BSP129 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 0.7 20 -0.2 V 0V 0.2 V 0.5 V 10 V -0.1 V 0.1 V 0.6 15 0.5 RDS(on) [W] 1V ID [A] 0.4 0.3 0.5 V 10 1V 0.2 0.2 V 5 0.1 V 10 V 0V -0.1 V 0.1 -0.2 V 0 0 0 2 4 6 8 10 0 0.05 0.1 VDS [V] 0.15 0.2 0.25 0.3 0.35 0.50 0.60 0.70 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 1 0.6 0.5 0.8 0.4 ID [A] gfs [S] 0.6 0.3 0.4 0.2 0.2 0.1 0 -2 -1 0 1 2 3 VGS [V] Rev. 1.42 0 0.00 0.10 0.20 0.30 0.40 ID [A] page 5 2012-11-29 BSP129 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.025 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=108 A parameter: I D 40 0 -0.5 30 98 % 98 % VGS(th) [V] RDS(on) [W] -1 20 typ -1.5 -2 2% 10 typ -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 C C =f(V DS); V GS=-3 V; f =1 MHz 1 102 L K 180 J 108 A 0.1 Ciss C [pF] 103 ID [mA] 10 M 140 Tj [C] 11 Threshold voltage bands N 100 Coss 101 Crss 100 0.01 -2 -1.5 -1 -0.5 VGS [V] Rev. 1.42 0 10 20 30 VDS [V] page 6 2012-11-29 BSP129 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.2 A pulsed parameter: T j parameter: V DD 10 6 0.5 VDS(max) 5 150 C 0.2 VDS(max) 4 25 C 3 0.8 VDS(max) 1 VGS [V] IF [A] 2 150 C, 98% 1 0 0.1 -1 -2 -3 -4 0.01 0 0.5 1 1.5 2 0 1 2 3 4 Qgate [nC] VSD [V] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A VBR(DSS) [V] 280 240 200 -60 -20 20 60 100 140 180 Tj [C] Rev. 1.42 page 7 2012-11-29 BSP129 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.42 page 8 2012-11-29 BSP129 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.42 page 9 2012-11-29