SURFACE MOUNT PRODUCTS SOT 23 (continued) RF SOT-23 Transistors Pinout! 1-Base, 2-Emitter, 3-Collector NPN ft NF Mag f Device Marking |Typ (GHz)! Ic (mA) | YCF (Vv) | Typ (4B) |(@lc (ma)| VCE (V) | Typ (4B) |@lc (ma)| VCE (v) | (MHz) MMBR930 7 5.5 30 5.0 1.9 2.0 5.0 15.5 30 5.0 500 BFR92 Pi 45 14 10 3.0 3.0 1.5 _ _ _ _ BFR92A P2 5.0 14 10 1.8 4.0 10 _ _ _ BFR93 R1 4.5 30 5.0 3.0 2.0 5.0 _ _ BFR93A R2 5.0 30 5.0 1.6 4.0 8.0 _ _ _ MMBR931 7D 3.5 1.0 1.0 2.7 0.5 1.0 18 1.0 1.0 500 MMBR2060 7E 2.5 20 10 2.0 1.5 10 13 20 10 500 MMBR5179 7H 1.5 5.0 6.0 4.0 15 6.0 11.0 5.0 6.0 450 MMBR920 7B 5.0 14 10 2.4 2.0 10 17 14 10 1000 MMBR901 7A 4.0 15 10 2.3 5.0 6.0 10.5 15 10 1000 MMBR5031 7G 2.0 5.0 6.0 1.9 1.0 6.0 13.5 5.0 6.0 450 MMBR2857 7K 1.0 4.0 10 _ _ _ _ _ _ _ BFS17 E1 1.0 2.0 5.0 5.0 2.0 5.0 _ _ _ 30 BFS175 E5 1.0 2.0 5.0 5.0 2.0 5.0 _ 30 PNP MMBR4957 7F 2.0 2.0 10 25 2.0 10 14.5 2.0 10 450 RF Junction Field-Effect SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-Collector N-CHANNEL NF Vis Device Marking Typ (dB) f (MHz) Min (mmhos) | Max (mmhos) Vs (V) V(BR)GSS MMBFU310 6C 1.5 100 10 18 10 ~25 MMBF5484 6B 2.0 100 3.0 6.0 15 25 MMBF5486 6H 2.0 100 4.0 8.0 15 25 MMBF4416 6A 2.0 100 4.5 7.5 15 30 MMBFJ310 6T 4.0 450 8.0 18 10 25 General-Purpose Field-Effect SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-Collector N-CHANNEL Yfs ipss Device Marking V(BR)GSS Min (mmhes) | Max (mmhos) Vps (Vv) Min (mA) Max (mA) MMBF-5457 6D 25 1.0 5.0 15 1.0 5.0 BFR30 M1 -25 1.0 4.0 10 4.0 10 BFR31 M2 25 1.5 4.5 10 1.0 5.0 MMBF5459 6L 25 2.0 6.0 15 4.0 16 P-CHANNEL MMBF5460 6E 40 1.0 4.0 15 1.0 5.0 MMBFJ175 6W 30V _ _ 7.0 60.0 Chopper/Switches, Junction Field-Effect SOT-23 Transistors N-CHANNEL V(GS) off Ipss rDS(on) totf (GS) 0 , Device Marking Max (Ohms) Max (ns) V(BR)GSS Min (V) Max (V) Min (mA) Max (mA) MMBF4391 6U 30 20 30 4.0 -10 50 150 MMBF4860 6F 40 50 30 -2.0 6.0 20 100 MMBF4392 6K 60 35 ~ 30 -2.0 5.0 25 75 MMBF4393 6G 100 55 30 0.5 3.0 5.0 30 MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-142