TC7660COA713 - Microchip Technology

 2002 Microchip Technology Inc. DS21465B-page 1

MTC7660

Features

• Wide Input Voltage Range: +1.5V to +10V

• Efficient Voltage Conversion (99.9%, typ)

• Excellent Power Efficiency (98%, typ)

• Low Power Consumption: 80 µA (typ) @ VIN = 5V

• Low Cost and Easy to Use

- Only Two External Capacitors Required

• Available in 8-Pin Small Outline (SOIC), 8-Pin

PDIP and 8-Pin CERDIP Packages

• Improved ESD Protection (3 kV HBM)

• No External Diode Required for High-Voltage

Operation

Applications

• RS-232 Negative Power Supply

• Simple Conversion of +5V to ±5V Supplies

• Voltage Multiplication VOUT = ± n V+

• Negative Supplies for Data Acquisition Systems

and Instrumentation

Package Types

General Description

The TC7660 is a pin-compatible replacement for the

industry standard 7660 charge pump voltage

converter. It converts a +1.5V to +10V input to a

corresponding -1.5V to -10V output using only two low

cost capacitors, eliminating inductors and their

associated cost, size and electromagnetic interference

(EMI).

The on-board oscillator operates at a nominal

frequency of 10 kHz. Operation below 10 kHz (for

lower supply current applications) is possible by

connecting an external capacitor from OSC to ground.

The TC7660 is available in 8-Pin PDIP, 8-Pin Small

Outline (SOIC) and 8-Pin CERDIP packages in

commercial and extended temperature ranges.

Functional Block Diagram

TC7660

CAP+

GND

CAP-VOUT

LOW

VOLTAGE (LV)

OSC

PDIP/CERDIP/SOIC

V+

TC7660

GND

Internal

Vol tage

Regulator

Oscillator

Voltage

Level

Translator

CAP

OSC

Logic

Network

OUT

CAP-

Internal

Voltage

Regulator

Charge Pump DC-to-DC Voltage Converter

TC7660

DS21465B-page 2  2002 Microchip Technology Inc.

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage .............................................................+10.5V

LV and OSC Inputs Voltage: (Note 1)

.............................................. -0.3V to VSS for V+ < 5.5V

.....................................(V+ – 5.5V) to (V+) for V+ > 5.5V

Current into LV ......................................... 20 µA for V+ > 3.5V

Output Short Duration (VSUPPLY ≤ 5.5V)...............Continuous

Package Power Dissipation: (TA ≤ 70°C)

8-Pin CERDIP ....................................................800 mW

8-Pin PDIP .........................................................730 mW

8-Pin SOIC .........................................................470 mW

Operating Temperature Range:

C Suffix.......................................................0°C to +70°C

I Suffix .....................................................-25°C to +85°C

E Suffix ....................................................-40°C to +85°C

M Suffix .................................................-55°C to +125°C

Storage Temperature Range.........................-65°C to +160°C

ESD protection on all pins (HBM) ................... ..............≥ 3kV

Maximum Junction Temperature ........... ....................... 150°C

* Notice: Stresses above those listed under "Maximum Rat-

ings" may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

FIGURE 1-1: TC7660 Test Circuit.

ELECTRICAL SPECIFICATIONS

TC7660

V+

(+5V)

VOUT

10 µF

COSC

10 µF

Electrical Characteristics: Unless otherwise noted, specifications measured over operating temperature range with V+ = 5V,

COSC = 0, refer to test circuit in Figure 1-1.

Parameters Sym Min Typ Max Units Conditions

Supply Current I+—80180µAR

L = ∞

Supply Voltage Range, High V+H3.0 — 10 V Min ≤ TA ≤ Max, RL = 10 kΩ, LV Open

Supply Voltage Range, Low V+L1.5 — 3.5 V Min ≤ TA ≤ Max, RL = 10 kΩ, LV to GND

Output Source Resistance ROUT —70100ΩIOUT=20 mA, TA = +25°C

——120 I

OUT=20 mA, TA ≤ +70°C (C Device)

——130 I

OUT=20 mA, TA ≤ +85°C (E and I Device)

—104150 I

OUT=20 mA, TA ≤ +125°C (M Device)

—150300 V

+ = 2V, IOUT = 3 mA, LV to GND

0°C ≤ TA ≤ +70°C

—160600 V

+ = 2V, IOUT = 3 mA, LV to GND

-55°C ≤ TA ≤ +125°C (M Device)

Oscillator Frequency fOSC — 10 — kHz Pin 7 open

Power Efficiency PEFF 95 98 — % RL = 5 kΩ

Voltage Conversion Efficiency VOUTEFF 97 99.9 — % RL = ∞

Oscillator Impedance ZOSC —1.0—MΩV+ = 2V

—100—kΩV+ = 5V

Note 1: Destructive latch-up may occur if voltages greater than V+ or less than GND are supplied to any input pin.

 2002 Microchip Technology Inc. DS21465B-page 3

TC7660

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, C1 = C2 = 10 µF, ESRC1 = ESRC2 = 1 Ω, TA = 25°C. See Figure 1-1.

FIGURE 2-1: Operating Voltage vs.

Temperature.

FIGURE 2-2: Output Source Resistance

vs. Supply Voltage.

FIGURE 2-3: Frequency of Oscillation vs.

Oscillator Capacitance.

FIGURE 2-4: Power Conversion

Efficiency vs. Oscillator Frequency.

FIGURE 2-5: Output Source Resistance

vs. Temperature.

FIGURE 2-6: Unloaded Oscillator

Frequency vs. Temperature.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

-2

+12

SUPPLY VOLTAGE (V)

TEMPERATURE

(

)

PPLY V

LTA

E RAN

7 8

10k

100Ω

OUTPUT SOURCE RESISTANCE (Ω)

6543210

SUPPLY VOLTAGE (V)

10Ω

OSCILLATOR CAPACITANCE (pF)

10k

OSCILLATOR FREQUENCY (Hz)

100

10 100 1000 10k

V+ = +5V

OSCILLATOR FREQUENCY (Hz)

100

POWER CONVERSION EFFICIENCY (%)

100 1k 10

V+ = +5V

IOUT = 1 mA

IOUT = 15 mA

500

450

400

200

150

100

-55 -25 0 +25 +50 +75 +100 +125

TEMPERATURE (°C)

OUTPUT SOURCE RESISTANCE (Ω)

V+ = +2V

V + = +5V

IOUT = 1 mA

TEMPERATURE (°C)

OSCILLATOR FREQUENCY (kHz)

-55

-25 0 +25 +50 +75 +100 +125

V+ = +5V

TC7660

DS21465B-page 4  2002 Microchip Technology Inc.

Note: Unless otherwise indicated, C1 = C2 = 10 µF, ESRC1 = ESRC2 = 1 Ω, TA = 25°C. See Figure 1-1.

FIGURE 2-7: Output Voltage vs. Output

Current.

FIGURE 2-8: Supply Current and Power

Conversion Efficiency vs. Load Current.

FIGURE 2-9: Output Voltage vs. Load

Current.

FIGURE 2-10: Output Voltage vs. Load

Current.

FIGURE 2-11: Supply Current and Power

Conversion Efficiency vs. Load Current.

OUTPUT CURRENT (mA)

OUTPUT VOLTAGE (V)

-1

-2

-3

-4

-5

-6

-7

-8

-9

-10

10 20 30 40 50 60 70 80 90 100

LV OPEN

POWER CONVERSION EFFICIENCY (%)

LOAD CURRENT (mA)

100

1.5 3.0 4.5 6.0 7.5 9.0

SUPPLY CURRENT (mA)

V+ = 2V

OUTPUT VOLTAGE (V)

-1

-2

123 4 5 67 8

LOAD CURRENT (mA)

SLOPE 150Ω

V+ = +2V

LOAD CURRENT (mA)

OUTPUT VOLTAGE (V)

-1

-2

-3

-4

-5

10 20 30 40 50 60 70 80

V+ = +5V

SLOPE 55Ω

LOAD CURRENT (mA)

POWER CONVERSION EFFICIENCY (%)

100

SUPPLY CURRENT (mA)

10 20 30 40 50 60

V+ = +5V

 2002 Microchip Technology Inc. DS21465B-page 5

TC7660

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

3.1 Charge Pump Capacitor (CAP+)

Positive connection for the charge pump capacitor, or

flying capacitor, used to transfer charge from the input

source to the output. In the voltage-inverting configura-

tion, the charge pump capacitor is charged to the input

voltage during the first half of the switching cycle. Dur-

ing the second half of the switching cycle, the charge

pump capacitor is inverted and charge is transferred to

the output capacitor and load.

It is recommended that a low ESR (equivalent series

resistance) capacitor be used. Additionally, larger

values will lower the output resistance.

3.2 Ground (GND)

Input and output zero volt reference.

3.3 Charge Pump Capacitor (CAP-)

Negative connection for the charge pump capacitor, or

flying capacitor, used to transfer charge from the input

to the output. Proper orientation is imperative when

using a polarized capacitor.

3.4 Output Voltage (VOUT)

Negative connection for the charge pump output

capacitor. In the voltage-inverting configuration, the

charge pump output capacitor supplies the output load

during the first half of the switching cycle. During the

second half of the switching cycle, charge is restored to

the charge pump output capacitor.

It is recommended that a low ESR (equivalent series

resistance) capacitor be used. Additionally, larger

values will lower the output ripple.

3.5 Low Voltage Pin (LV)

The low voltage pin ensures proper operation of the

internal oscillator for input voltages below 3.5V. The low

voltage pin should be connected to ground (GND) for

input voltages below 3.5V. Otherwise, the low voltage

pin should be allowed to float.

3.6 Oscillator Control Input (OSC)

The oscillator control input can be utilized to slow down

or speed up the operation of the TC7660. Refer to

Section 5.4, “Changing the TC7660 Oscillator

Frequency”, for details on altering the oscillator

frequency.

3.7 Power Supply (V+)

Positive power supply input voltage connection. It is

recommended that a low ESR (equivalent series resis-

tance) capacitor be used to bypass the power supply

input to ground (GND).

Pin No. Symbol Description

1 NC No connection

2CAP

+Charge pump capacitor positive terminal

3 GND Ground terminal

4CAP

-Charge pump capacitor negative terminal

OUT Output voltage

6 LV Low voltage pin. Connect to GND for V+ < 3.5V

7 OSC Oscillator control input. Bypass with an external capacitor to slow the oscillator

+Power supply positive voltage input

TC7660

DS21465B-page 6  2002 Microchip Technology Inc.

4.0 DETAILED DESCRIPTION

4.1 Theory of Operation

The TC7660 charge pump converter inverts the voltage

applied to the V+ pin. The conversion consists of a two-

phase operation (Figure 4-1). During the first phase,

switches S2 and S4 are open and switches S1 and S3

are closed. C1 charges to the voltage applied to the V+

pin, with the load current being supplied from C2. Dur-

ing the second phase, switches S2 and S4 are closed

and switches S1 and S3 are open. Charge is trans-

ferred from C1 to C2, with the load current being

supplied from C1.

FIGURE 4-1: Ideal Switched Capacitor

Inverter.

In this manner, the TC7660 performs a voltage inver-

sion, but does not provide regulation. The average out-

put voltage will drop in a linear manner with respect to

load current. The equivalent circuit of the charge pump

inverter can be modeled as an ideal voltage source in

series with a resistor, as shown in Figure 4-2.

FIGURE 4-2: Switched Capacitor Inverter

Equivalent Circuit Model.

The value of the series resistor (ROUT) is a function of

the switching frequency, capacitance and equivalent

series resistance (ESR) of C1 and C2 and the on-resis-

tance of switches S1, S2, S3 and S4. A close

approximation for ROUT is given in the following

equation:

EQUATION

4.2 Switched Capacitor Inverter

Power Losses

The overall power loss of a switched capacitor inverter

is affected by four factors:

1. Losses from power consumed by the internal

oscillator, switch drive, etc. These losses will

vary with input voltage, temperature and

oscillator frequency.

2. Conduction losses in the non-ideal switches.

3. Losses due to the non-ideal nature of the

external capacitors.

4. Losses that occur during charge transfer from

C1 to C2 when a voltage difference between the

capacitors exists.

Figure 4-3 depicts the non-ideal elements associated

with the switched capacitor inverter power loss.

FIGURE 4-3: Non-Ideal Switched

Capacitor Inverter.

The power loss is calculated using the following

equation:

EQUATION

V+

GND S3

S1S2

VOUT = -VIN

ROUT

VOUT

V+

ROUT

fPUMP C1×

----------------------------- 8RSW 4ESRC1 ESRC2

++ +=

RSW on-resistance of the switches=

ESRC1 equivalent series resistance of C1

ESRC2 equivalent series resistance of C2

fPUMP

fOSC

-----------

Where:

LOAD

C1C2

RSW

IDD

ESRC1

V+

RSW

RSW S3RSW S4

ESRC2

IOUT

PLOSS IOUT

2ROUT

×IDD V+

×+=

 2002 Microchip Technology Inc. DS21465B-page 7

TC7660

5.0 APPLICATIONS INFORMATION

5.1 Simple Negative Voltage

Converter

Figure 5-1 shows typical connections to provide a

negative supply where a positive supply is available. A

similar scheme may be employed for supply voltages

anywhere in the operating range of +1.5V to +10V,

keeping in mind that pin 6 (LV) is tied to the supply

negative (GND) only for supply voltages below 3.5V.

FIGURE 5-1: Simple Negative Converter.

The output characteristics of the circuit in Figure 5-1

are those of a nearly ideal voltage source in series with

a 70Ω resistor. Thus, for a load current of -10 mA and

a supply voltage of +5V, the output voltage would be

-4.3V.

5.2 Paralleling Devices

To reduce the value of ROUT

, multiple TC7660 voltage

converters can be connected in parallel (Figure 5-2).

The output resistance will be reduced by approximately

a factor of n, where n is the number of devices

connected in parallel.

EQUATION

While each device requires its own pump capacitor

(C1), all devices may share one reservoir capacitor

(C2). To preserve ripple performance, the value of C2

should be scaled according to the number of devices

connected in parallel.

5.3 Cascading Devices

A larger negative multiplication of the initial supply volt-

age can be obtained by cascading multiple TC7660

devices. The output voltage and the output resistance

will both increase by approximately a factor of n, where

n is the number of devices cascaded.

EQUATION

FIGURE 5-2: Paralleling Devices Lowers Output Impedance.

FIGURE 5-3: Increased Output Voltage By Cascading Devices.

V+

TC7660

VOUT*

10 µF

* VOUT = -V+ for 1.5V ≤ V+ ≤ 10V

10 µF

ROUT

ROUT of TC7660()

n number of devices()

---------------------------------------------------

VOUT n–V+

()=

ROUT nR×OUT of TC7660()=

“n”

“1”

V+

TC7660

VOUT *

“1”

V+

TC7660

10 µF

* VOUT = -n V+ for 1.5V ≤ V+ ≤ 10V

“n”

TC7660

10 µF

+10 µF

TC7660

DS21465B-page 8  2002 Microchip Technology Inc.

5.4 Changing the TC7660 Oscillator

Frequency

The operating frequency of the TC7660 can be

changed in order to optimize the system performance.

The frequency can be increased by over-driving the

OSC input (Figure 5-4). Any CMOS logic gate can be

utilized in conjunction with a 1 kΩ series resistor. The

resistor is required to prevent device latch-up. While

TTL level signals can be utilized, an additional 10 kΩ

pull-up resistor to V+ is required. Transitions occur on

the rising edge of the clock input. The resultant output

voltage ripple frequency is one half the clock input.

Higher clock frequencies allow for the use of smaller

pump and reservoir capacitors for a given output volt-

age ripple and droop. Additionally, this allows the

TC7660 to be synchronized to an external clock, elimi-

nating undesirable beat frequencies.

At light loads, lowering the oscillator frequency can

increase the efficiency of the TC7660 (Figure 5-5). By

lowering the oscillator frequency, the switching losses

are reduced. Refer to Figure 2-3 to determine the typi-

cal operating frequency based on the value of the

external capacitor. At lower operating frequencies, it

may be necessary to increase the values of the pump

and reservoir capacitors in order to maintain the

desired output voltage ripple and output impedance.

FIGURE 5-4: External Clocking.

FIGURE 5-5: Lowering Oscillator

Frequency.

5.5 Positive Voltage Multiplication

Positive voltage multiplication can be obtained by

employing two external diodes (Figure 5-6). Refer to

the theory of operation of the TC7660 (Section 4.1).

During the half cycle when switch S2 is closed, capaci-

tor C1 of Figure 5-6 is charged up to a voltage of

V+ - VF1, where VF1 is the forward voltage drop of diode

D1. During the next half cycle, switch S1 is closed, shift-

ing the reference of capacitor C1 from GND to V+. The

energy in capacitor C1 is transferred to capacitor C2

through diode D2, producing an output voltage of

approximately:

EQUATION

FIGURE 5-6: Positive Voltage Multiplier.

5.6 Combined Negative Voltage

Conversion and Positive Supply

Multiplication

Simultaneous voltage inversion and positive voltage

multiplication can be obtained (Figure 5-7). Capacitors

C1 and C3 perform the voltage inversion, while capaci-

tors C2 and C4, plus the two diodes, perform the posi-

tive voltage multiplication. Capacitors C1 and C2 are

the pump capacitors, while capacitors C3 and C4 are

the reservoir capacitors for their respective functions.

Both functions utilize the same switches of the TC7660.

As a result, if either output is loaded, both outputs will

drop towards GND.

CMOS

GATE

1kΩ

VOUT

“1”

V+

TC7660

10 µF

V+

VOUT

TC7660

V+

COSC

VOUT 2V

×VF1 VF2

+()–=

where:

VF1 is the forward voltage drop of diode D1

and

VF2 is the forward voltage drop of diode D2.

+C2

D1D2

+C1

VOUT =

TC7660

V+

(2 V+) - (2 VF)

 2002 Microchip Technology Inc. DS21465B-page 9

TC7660

FIGURE 5-7: Combined Negative

Converter And Positive Multiplier.

5.7 Efficient Positive Voltage

Multiplication/Conversion

Since the switches that allow the charge pumping

operation are bidirectional, the charge transfer can be

performed backwards as easily as forwards.

Figure 5-8 shows a TC7660 transforming -5V to +5V

(or +5V to +10V, etc.). The only problem here is that the

internal clock and switch-drive section will not operate

until some positive voltage has been generated. An ini-

tial inefficient pump, as shown in Figure 5-7, could be

used to start this circuit up, after which it will bypass the

other (D1 and D2 in Figure 5-7 would never turn on), or

else the diode and resistor shown dotted in Figure 5-8

can be used to "force" the internal regulator on.

FIGURE 5-8: Positive Voltage

Conversion.

VOUT =

TC7660

V+

(2 V+) - (2 VF)

VOUT

= -V+

VOUT = -V -

1MΩ

V-

input

TC7660

10 µF

TC7660

DS21465B-page 10  2002 Microchip Technology Inc.

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

XXXXXXXX

XXXXXNNN

YYWW

8-Lead PDIP (300 mil) Example:

8-Lead CERDIP (300 mil) Example:

Legend: XX...X Customer specific information*

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanumeric traceability code

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line thus limiting the number of available characters

for customer specific information.

*Standard marking consists of Microchip part number, year code, week code, traceability code (facility

code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please

check with your Microchip Sales Office.

TC7660

CPA061

0221

XXXXXXXX

XXXXXNNN

YYWW

TC7660

MJA061

0221

8-Lead SOIC (150 mil) Example:

XXXXXXXX

XXXXYYWW

NNN

TC7660

COA0221

061

 2002 Microchip Technology Inc. DS21465B-page 11

TC7660

8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)

Units INCHES* MILLIMETERS

Dimension Limits MIN NOM MAX MIN NOM MAX

Number of Pins n88

Pitch p.100 2.54

Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32

Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68

Base to Seating Plane A1 .015 0.38

Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26

Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60

Overall Length D .360 .373 .385 9.14 9.46 9.78

Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43

Lead Thickness c.008 .012 .015 0.20 0.29 0.38

Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78

Lower Lead Width B .014 .018 .022 0.36 0.46 0.56

Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92

Mold Draft Angle Top α51015 51015

Mold Draft Angle Bottom β51015 51015

* Controlling Parameter

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

JEDEC Equivalent: MS-001

Drawing No. C04-018

.010” (0.254mm) per side.

§ Significant Characteristic

TC7660

DS21465B-page 12  2002 Microchip Technology Inc.

8-Lead Ceramic Dual In-line – 300 mil (CERDIP)

Packaging diagram not available at this time.

 2002 Microchip Technology Inc. DS21465B-page 13

TC7660

8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)

Foot Angle φ048048

1512015120

Mold Draft Angle Bottom

1512015120

Mold Draft Angle Top

0.510.420.33.020.017.013BLead Width

0.250.230.20.010.009.008

Lead Thickness

0.760.620.48.030.025.019LFoot Length

0.510.380.25.020.015.010hChamfer Distance

5.004.904.80.197.193.189DOverall Length

3.993.913.71.157.154.146E1Molded Package Width

6.206.025.79.244.237.228EOverall Width

0.250.180.10.010.007.004A1Standoff §

1.551.421.32.061.056.052A2Molded Package Thickness

1.751.551.35.069.061.053AOverall Height

1.27.050

Pitch

Number of Pins

MAXNOMMINMAXNOMMINDimension Limits

MILLIMETERSINCHES*Units

45°

* Controlling Parameter

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-012

Drawing No. C04-057

§ Significant Characteristic

TC7660

DS21465B-page 14  2002 Microchip Technology Inc.

NOTES:

 2002 Microchip Technology Inc. DS21465B-page15

TC7660

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-

mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

PART NO. X/XX

PackageTemperature

Range

Device

Device: TC7660: DC-to-DC Voltage Converter

Temperature Range: C = 0°C to +70°C

E = -40°C to +85°C

I = -25°C to +85°C (CERDIP only)

M = -55°C to +125°C (CERDIP only)

Package: PA = Plastic DIP, (300 mil body), 8-lead

JA = Ceramic DIP, (300 mil body), 8-lead

OA = SOIC (Narrow), 8-lead

OA713 = SOIC (Narrow), 8-lead (Tape and Reel)

Examples:

a) TC7660COA: Commercial Temp., SOIC

package.

b) TC7660COA713:Tape and Reel, Commercial

Temp., SOIC package.

c) TC7660CPA: Commercial Temp., PDIP

package.

d) TC7660EOA: Extended Temp., SOIC

package.

e) TC7660EOA713: Tape and Reel, Extended

Temp., SOIC package.

f) TC7660EPA: Extended Temp., PDIP

package.

g) TC7660IJA: Industrial Temp., CERDIP

package

h) TC7660MJA: Military Temp., CERDIP

package.

TC7660

DS21465B-page 16  2002 Microchip Technology Inc.

NOTES:

 2002 Microchip Technology Inc. DS21465B - page 17

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microchip Technology Incorporated with respect

to the accuracy or use of such information, or infringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical com-

ponents in life support systems is not authorized except with

express written approval by Microchip. No licenses are con-

veyed, implicitly or otherwise, under any intellectual property

rights.

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MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select

Mode and Total Endurance are trademarks of Microchip

Technology Incorporated in the U.S.A. and other countries.

Serialized Quick Turn Programming (SQTP) is a service mark

of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received QS-9000 quality system

certification for its worldwide headquarters,

design and wafer fabrication facilities in

Chandler and Tempe, Arizona in July 1999

and Mountain View, California in March 2002.

The Company’s quality system processes and

procedures are QS-9000 compliant for its

PICmicro® 8-bit MCUs, KEELOQ® code hopping

devices, Serial EEPROMs, microperipherals,

non-volatile memory and analog products. In

addition, Microchip’s quality system for the

design and manufacture of development

systems is ISO 9001 certified.

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowl-

edge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products.

DS21465B-page 18  2002 Microchip Technology Inc.

AMERICAS

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200 Fax: 480-792-7277

Technical Support: 480-792-7627

Web Address: http://www.microchip.com

Rocky Mountain

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7966 Fax: 480-792-4338

Atlanta

3780 Mansell Road, Suite 130

Alpharetta, GA 30022

Tel: 770-640-0034 Fax: 770-640-0307

Boston

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978-692-3848 Fax: 978-692-3821

Chicago

333 Pierce Road, Suite 180

Itasca, IL 60143

Tel: 630-285-0071 Fax: 630-285-0075

Dallas

4570 Westgrove Drive, Suite 160

Addison, TX 75001

Tel: 972-818-7423 Fax: 972-818-2924

Detroit

Tri-Atria Office Building

32255 Northwestern Highway, Suite 190

Farmington Hills, MI 48334

Tel: 248-538-2250 Fax: 248-538-2260

Kokomo

2767 S. Albright Road

Kokomo, Indiana 46902

Tel: 765-864-8360 Fax: 765-864-8387

Los Angeles

18201 Von Karman, Suite 1090

Irvine, CA 92612

Tel: 949-263-1888 Fax: 949-263-1338

San Jose

Microchip Technology Inc.

2107 North First Street, Suite 590

San Jose, CA 95131

Tel: 408-436-7950 Fax: 408-436-7955

Toronto

6285 Northam Drive, Suite 108

Mississauga, Ontario L4V 1X5, Canada

Tel: 905-673-0699 Fax: 905-673-6509

ASIA/PACIFIC

Australia

Microchip Technology Australia Pty Ltd

Suite 22, 41 Rawson Street

Epping 2121, NSW

Australia

Tel: 61-2-9868-6733 Fax: 61-2-9868-6755

China - Beijing

Microchip Technology Consulting (Shanghai)

Co., Ltd., Beijing Liaison Office

Unit 915

Bei Hai Wan Tai Bldg.

No. 6 Chaoyangmen Beidajie

Beijing, 100027, No. China

Tel: 86-10-85282100 Fax: 86-10-85282104

China - Chengdu

Microchip Technology Consulting (Shanghai)

Co., Ltd., Chengdu Liaison Office

Rm. 2401-2402, 24th Floor,

Ming Xing Financial Tower

No. 88 TIDU Street

Chengdu 610016, China

Tel: 86-28-86766200 Fax: 86-28-86766599

China - Fuzhou

Microchip Technology Consulting (Shanghai)

Co., Ltd., Fuzhou Liaison Office

Unit 28F, World Trade Plaza

No. 71 Wusi Road

Fuzhou 350001, China

Tel: 86-591-7503506 Fax: 86-591-7503521

China - Shanghai

Microchip Technology Consulting (Shanghai)

Co., Ltd.

Room 701, Bldg. B

Far East International Plaza

No. 317 Xian Xia Road

Shanghai, 200051

Tel: 86-21-6275-5700 Fax: 86-21-6275-5060

China - Shenzhen

Microchip Technology Consulting (Shanghai)

Co., Ltd., Shenzhen Liaison Office

Rm. 15-16, 13/F, Shenzhen Kerry Centre,

Renminnan Lu

Shenzhen 518001, China

Tel: 86-755-82350361 Fax: 86-755-82366086

China - Hong Kong SAR

Microchip Technology Hongkong Ltd.

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Kwai Fong, N.T., Hong Kong

Tel: 852-2401-1200 Fax: 852-2401-3431

India

Microchip Technology Inc.

India Liaison Office

Divyasree Chambers

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalore, 560 025, India

Tel: 91-80-2290061 Fax: 91-80-2290062

Japan

Microchip Technology Japan K.K.

Benex S-1 6F

3-18-20, Shinyokohama

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81-45-471- 6166 Fax: 81-45-471-6122

Korea

Microchip Technology Korea

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

Tel: 82-2-554-7200 Fax: 82-2-558-5934

Singapore

Microchip Technology Singapore Pte Ltd.

200 Middle Road

#07-02 Prime Centre

Singapore, 188980

Tel: 65-6334-8870 Fax: 65-6334-8850

Taiwa n

Microchip Technology (Barbados) Inc.,

Taiwan Branch

11F-3, No. 207

Tung Hua North Road

Taipei, 105, Taiwan

Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

EUROPE

Austria

Microchip Technology Austria GmbH

Durisolstrasse 2

A-4600 Wels

Austria

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark

Microchip Technology Nordic ApS

Regus Business Centre

Lautrup hoj 1-3

Ballerup DK-2750 Denmark

Tel: 45 4420 9895 Fax: 45 4420 9910

France

Microchip Technology SARL

Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

Batiment A - ler Etage

91300 Massy, France

Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79

Germany

Microchip Technology GmbH

Steinheilstrasse 10

D-85737 Ismaning, Germany

Tel: 49-89-627-144 0 Fax: 49-89-627-144-44

Italy

Microchip Technology SRL

Centro Direzionale Colleoni

Palazzo Taurus 1 V. Le Colleoni 1

20041 Agrate Brianza

Milan, Italy

Tel: 39-039-65791-1 Fax: 39-039-6899883

United Kingdom

Microchip Ltd.

505 Eskdale Road

Winnersh Triangle

Wokingham

Berkshire, England RG41 5TU

Tel: 44 118 921 5869 Fax: 44-118 921-5820

11/15/02

WORLDWIDE SALES AND SERVICE