PZT2907AT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1997 Jun 02

1999 Apr 14

DISCRETE SEMICONDUCTORS

PZT2907A

PNP switching transistor

handbook, halfpage

M3D087

1999 Apr 14 2

NXP Semiconductors Product data sheet

PNP switching transistor PZT2907A

FEATURES

•High current (max. 600 mA)

•Low voltage (max. 60 V).

APPLICATIONS

•Switching and linear amplification.

DESCRIPTION

PNP switching transistor in a SOT223 plastic package.

NPN complement: PZT2222A.

PINNING

PIN DESCRIPTION

1base

2, 4 collector

3emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

123

MAM288

Top view

2, 4

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter − −60 V

VCEO collector-emitter voltage open base − −60 V

VEBO emitter-base vo ltage open collector − −5 V

ICcollector current (DC) − −600 mA

ICM peak collector current − −800 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C−1.15 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

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NXP Semiconductors Pr oduct data shee t

PNP switching transistor PZT2907A

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a pr inted-circuit board, single-s ided copper, tinplate d, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT2 23 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 106 K/W

Rth j-s thermal resistance from junction to soldering point 25 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −50 V − −10 nA

IE = 0; VCB = −50 V; Tamb = 150 °C− −10 µA

IEBO emitter cut-off current IC = 0; VEB = −5 V − −50 nA

hFE DC current gain IC = −0.1 mA; VCE = −10 V 75 −

IC = −1 mA; VCE = −10 V 100 −

IC = −10 mA; VCE = −10 V 100 −

IC = −150 mA; VCE = −10 V; note 1 100 300

IC = −500 mA; VCE = −10 V; note 1 50 −

VCEsat collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −400 mV

IC = −500 mA; IB = −50 mA; note 1 − −1.6 V

VBEsat base-emitt er saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −1.3 V

IC = −500 mA; IB = −50 mA; note 1 − −2.6 V

Cccollector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz −8pF

Ceemitter cap a citance IC = ic = 0; VEB = −2 V; f = 1 MHz −30 pF

fTtransition freque ncy IC = −50 mA; VCE = −20 V;

f = 100 MHz; note 1 200 −MHz

Switching times (between 10% and 90% levels); (see Fig.2)

ton turn-on time ICon = −150 mA; IBon = −15 mA;

IBoff = 15 mA −40 ns

tddelay time −12 ns

trrise time −30 ns

toff turn-off time −365 ns

tsstorage time −300 ns

tffall time −65 ns

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NXP Semiconductors Pr oduct data shee t

PNP switching transistor PZT2907A

Fig.2 Test circuit for switching times.

handbook, full pagewidth

DUT

MGD624

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.

VBB = 3.5 V; VCC = −29.5 V.

Oscillosc ope input impedance Z i = 50 Ω.

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NXP Semiconductors Pr oduct data shee t

PNP switching transistor PZT2907A

PACKAGE OUTLINE

UNIT A1bpcDEe1HELpQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22

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NXP Semiconductors Pr oduct data shee t

PNP switching transistor PZT2907A

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property ri gh ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document d oes not form part o f an y q uot ation or co nt ra ct, is believed to be accurate a nd reliable and may be change d

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands 115002/00/03/pp7 Date of releas e: 1999 Apr 14 Document orde r number: 9397 750 05637