PESD5V0U2BT,215 - NXP - Datasheet.World

1. Product proﬁle

1.1 General description

Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode

in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed

to protect two data lines from the damage caused by ESD.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection

diode

Rev. 01 — 27 March 2007 Product data sheet

nBidirectional ESD protection of two lines nUltra low leakage current: IRM =5nA

nUltra low diode capacitance: Cd= 2.9 pF nESD protection of up to 10 kV

nIEC 61000-4-2; level 4 (ESD)

nComputers and peripherals nCommunication systems

nAudio and video equipment nPortable electronics

nCellular handsets and accessories nSubscriber Identity Module (SIM) card

protection

n10/100/1000 Ethernet nFireWire

nLocal Area Network (LAN) equipment nHigh-speed data lines

Table 1. Quick reference data

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage - - 5 V

Cddiode capacitance f = 1 MHz; VR= 0 V - 2.9 3.5 pF

Product data sheet Rev. 01 — 27 March 2007 2 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 2. Pinning

Pin Description Simpliﬁed outline Symbol

1 cathode 1

2 cathode 2

3 common cathode

006aaa155

Table 3. Ordering information

Type number Package

Name Description Version

PESD5V0U2BT - plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

PESD5V0U2BT 1U*

Product data sheet Rev. 01 — 27 March 2007 3 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

5. Limiting values

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1 to pin 2.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 6. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

Per diode

VESD electrostatic discharge

voltage IEC 61000-4-2

(contact discharge) [1][2] -10kV

MIL-STD-883 (human

body model) -8kV

Table 7. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Fig 1. ESD pulse waveform according to IEC 61000-4-2

001aaa631

IPP

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 ns to 1 ns

Product data sheet Rev. 01 — 27 March 2007 4 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

6. Characteristics

Table 8. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage - - 5 V

IRM reverse leakage current VRWM = 5 V - 5 100 nA

VBR breakdown voltage IR= 5 mA 5.5 7 9.5 V

Cddiode capacitance f=1MHz

VR= 0 V - 2.9 3.5 pF

VR= 5 V - 1.9 - pF

rdif differential resistance IR= 1 mA - - 100 Ω

f = 1 MHz; Tamb =25°C

Fig 2. Diode capacitance as a function of reverse

voltage; typical values Fig 3. V-I characteristics for a bidirectional ESD

protection diode

VR (V)

054231

006aab036

2.2

2.6

3.0

(pF)

1.8

006aaa676

−VCL −VBR −VRWM VCL

VBR

VRWM

−IRM

IRM

−IR

−IPP

IPP

−+

Product data sheet Rev. 01 — 27 March 2007 5 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

Fig 4. ESD clamping test setup and waveforms

006aab037

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

GND

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 10 A/div

horizontal scale = 15 ns/div

vertical scale = 10 A/div

horizontal scale = 15 ns/div vertical scale = 10 V/div

horizontal scale = 100 ns/div

vertical scale = 10 V/div

horizontal scale = 100 ns/div

Product data sheet Rev. 01 — 27 March 2007 6 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

7. Application information

The PESD5V0U2BT is designed for the bidirectional protection of two signal lines from

the damage caused by ESD pulses. The PESD5V0U2BT may be used on lines where the

signal polarities are either positive or negative with respect to ground.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the PESD5V0U2BT as close to the input terminal or connector as possible.

2. The path length between the PESD5V0U2BT and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

Fig 5. Bidirectional protection of two lines

006aab039

PESD5V0U2BT

GND

line 2 to be protected

line 1 to be protected

Product data sheet Rev. 01 — 27 March 2007 7 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

Fig 6. Package outline SOT23 (TO-236AB)

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1 1.4

1.2

0.48

0.38 0.15

0.09

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

PESD5V0U2BT SOT23 4 mm pitch, 8 mm tape and reel -215 -235

Product data sheet Rev. 01 — 27 March 2007 8 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

10. Soldering

Fig 7. Reﬂow soldering footprint SOT23 (TO-236AB)

Fig 8. Wave soldering footprint SOT23 (TO-236AB)

solder resist

occupied area

solder lands

solder paste

Dimensions in mm

sot023

1.00

0.60

(3x)

1.30

2.50

3.00

0.85

2.70

2.90

0.50 (3x)

0.60 (3x)

3.30

0.85

sot023

4.004.60

2.80

4.50

1.20

3.40

1.20 (2x)

preferred transport direction during soldering

Dimensions in mm

solder resist

occupied area

solder lands

Product data sheet Rev. 01 — 27 March 2007 9 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5V0U2BT_1 20070327 Product data sheet - -

Product data sheet Rev. 01 — 27 March 2007 10 of 11

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a NXP Semiconductors product can reasonably be expected to

result in personal injury, death or severe property or environmental damage.

NXP Semiconductors accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or applications and therefore

such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 27 March 2007

Document identifier: PESD5V0U2BT_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 6

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Contact information. . . . . . . . . . . . . . . . . . . . . 10

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11