FDS6679Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. * -13 A, -30 V. RDS(ON) = 9 m @ V GS = -10 V RDS(ON) = 13 m @ V GS = - 4.5 V * Extended V GSS range (-25V) for battery applications These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D D * High power and current handling capability D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter -30 V V GSS Gate-Source Voltage -25/+20 V ID Drain Current -13 A - Continuous (Note 1a) - Pulsed PD -50 Power Dissipation for Single Operation TJ , TSTG (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1.0 W -55 to +175 C (Note 1a) 50 C/W (Note 1) 25 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6679Z FDS6679Z 13'' 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS6679Z Rev C (W) FDS6679Z October 2001 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min ID = -250 A -30 Typ Max Units Off Characteristics BV DSS BV DSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, V DS = -24 V, V GS = 0 V -1 IGSSF Gate-Body Leakage, Forward V GS = -25 V, V DS = 0 V -10 A A IGSSR Gate-Body Leakage, Reverse V GS = 20 V, V DS = 0 V 10 A -3 V On Characteristics ID = -250 A,Referenced to 25C V -22 mV/C (Note 2) V DS = V GS , ID = -250 A ID = -250 A,Referenced to 25C V GS(th) V GS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current V GS = -10 V, ID = -13 A V GS = -4.5 V, ID = -11 A V GS =-4.5 V, ID =-13A, TJ =125C V GS = -4.5 V, V DS = -5 V gFS Forward Transconductance V DS = -5 V, -1 -1.7 4.9 7.2 10 10 mV/C 9 13 13 -50 ID = -13 A m A 43 S 3803 pF 974 pF 490 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge V DS = -15 V, V GS = 0 V, f = 1.0 MHz (Note 2) V DD = -15 V, ID = -1 A, V GS = -10 V, RGEN = 6 18 32 ns 9 18 ns Turn-Off Delay Time 92 147 ns Turn-Off Fall Time 54 86 ns 67 94 nC V DS = -15 V, ID = -13 A, V GS = -10 V 11 nC 15 nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -2.1 A Voltage (Note 2) -0.7 -2.1 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W (10 sec) 62.5C/W steady state when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS6679Z Rev C(W) FDS6679Z Electrical Characteristics FDS6679Z Typical Characteristics 2.2 60 V GS = -10V VGS = - 3.5V -ID , DRAIN CURRENT (A) -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V -3.5V 45 30 -3.0V 15 0 0 0.5 1 1.5 2 2 1.8 -4.5V 1.6 -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V 1 0.8 2.5 0 15 -V DS , DRAIN TO SOURCE VOLTAGE (V) 45 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 1.6 ID = -13A V GS = -10V 1.5 ID = -6.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 -I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.03 0.02 T A = 125o C T A = 25o C 0.01 0.00 -50 -25 0 25 50 75 100 125 150 175 2 4 T J , JUNCTION TEMPERATURE (oC) 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 80 V GS = 0V -IS , REVERSE DRAIN CURRENT (A) T A = -55o C V DS = -5V -ID , DRAIN CURRENT (A) -10V 25o C 60 125o C 40 20 10 T A = 125o C 1 25 oC -55 oC 0.1 0.01 0.001 0 1.5 2 2.5 3 3.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6679Z Rev C(W) FDS6679Z Typical Characteristics 5000 f = 1 MHz V GS = 0 V V DS = -5V ID = -13A -10V 8 CISS 4000 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 6 4 3000 2000 C OSS 2 1000 0 0 CRSS 0 10 20 30 40 50 60 70 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100s 1ms -ID , DRAIN CURRENT (A) 10 -V D S, DRAIN TO SOURCE VOLTAGE (V) 10 10ms 100ms 1s 1 DC VGS = -10V SINGLE PULSE RJA = 125o C/W 0.1 T A = 25o C 0.01 0.01 0.1 1 10 SINGLE PULSE RJA = 125C/W TA = 25C 40 30 20 10 0 0.001 100 0.01 0.1 1 10 100 1000 t1 , TIME (sec) -V D S, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 R JA(t) = r(t) + RJA 0.2 0.1 o RJA = 125 C/W 0.1 0.05 P(pk) 0.02 t1 0.01 t2 T J - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6679Z Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4