FDS6679Z Rev C(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA,Referenced to 25°C –22 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = –25 V, VDS = 0 V –10 µA
IGSSR Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V 10 µA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = –250 µA,Referenced to 25°C
4.9 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –13 A
VGS = –4.5 V, ID = –11 A
VGS=–4.5 V, ID =–13A, TJ=125°C
7.2
10
10
9
13
13
mΩ
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
gFS Forward Transconductance VDS = –5 V, ID = –13 A 43 S
Dynamic Characteristics
Ciss Input Capacitance 3803 pF
Coss Output Capacitance 974 pF
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz 490 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 18 32 ns
tr Turn–On Rise Time 9 18 ns
td(off) Turn–Off Delay Time 92 147 ns
tf Turn–Off Fall Time
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
54 86 ns
Qg Total Gate Charge 67 94 nC
Qgs Gate–Source Charge 11 nC
Qgd Gate–Drain Charge
VDS = –15 V, ID = –13 A,
VGS = –10 V
15 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.