SQJ858AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * TrenchFET(R) Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0075 ID (A) * AEC-Q101 Qualified * 100 % Rg and UIS Tested * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 58 Configuration Single PowerPAK(R) SO-8L Single m 5m 6.1 D 5.1 3m m G D 4 G S 3 S S 2 S 1 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ858AEP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current TC = 25 C TC = 125 C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range ID 33 IS 43 230 IAS 35 EAS 61 TJ, Tstg Soldering Recommendations (Peak Temperature)d, e V 58 IDM PD UNIT 48 16 - 55 to + 175 260 A mJ W C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountb SYMBOL LIMIT RthJA 85 RthJC 3.1 UNIT C/W Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S12-1170-Rev. A, 21-May-12 Document Number: 63470 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ858AEP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage 40 - - 1.5 2.0 2.5 VDS = 0 V, VGS = 20 V IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0, ID = 250 A VDS = VGS, ID = 250 A IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs - - 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 C - - 250 VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 14 A - 0.0050 0.0063 VGS = 4.5 V ID = 10 A - 0.0060 0.0075 VGS = 10 V ID = 14 A, TJ = 125 C - - 0.0120 VGS = 10 V ID = 14 A, TJ = 175 C - - 0.0150 - 99 - - 1951 2450 - 295 370 - 110 140 VDS = 14 V, ID = 16 A V nA A A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VDS = 20 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 20 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 tf - 36 55 - 8 - - 6 - 1.5 2.97 4.5 - 10 15 pF nC - 9 14 - 26 40 - 8 12 - - 230 A - 0.8 1.1 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 15 A, VGS = 0 Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1170-Rev. A, 21-May-12 Document Number: 63470 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ858AEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 50 45 VGS = 10 V thru 4 V 36 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 VGS = 3 V 27 TC = 25 C 18 10 9 0 0 TC = 125 C TC = - 55 C 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 150 0.030 TC = - 55 C TC = 25 C 120 0.024 RDS(on) - On-Resistance () gfs - Transconductance (S) 10 90 TC = 125 C 60 30 0.018 0.012 VGS = 4.5 V 0.006 VGS = 10 V 0 0.000 0 5 10 15 ID - Drain Current (A) 20 25 0 10 20 30 40 50 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 3000 10 ID = 20 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2400 Ciss 1800 1200 600 Coss Crss 0 8 VDS = 20 V 6 4 2 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance S12-1170-Rev. A, 21-May-12 40 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge Document Number: 63470 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ858AEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 100 2.1 1.8 10 VGS = 10 V 1.5 TJ = 150 C IS - Source Current (A) RDS(on) - On-Resistance (Normalized) ID = 14 A VGS = 4.5 V 1.2 1 0.1 TJ = 25 C 0.9 0.01 0.6 - 50 - 25 0.001 0 25 50 75 100 125 150 0.0 175 0.2 0.05 0.4 0.04 0.1 0.03 0.02 TJ = 25 C 4 6 1.0 1.2 - 0.2 ID = 5 mA - 0.5 - 0.8 - 1.1 - 50 0.00 2 0.8 ID = 250 A TJ = 150 C 0 0.6 Source Drain Diode Forward Voltage VGS(th) Variance (V) RDS(on) - On-Resistance () On-Resistance vs. Junction Temperature 0.01 0.4 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (C) 8 10 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 55 VDS - Drain-to-Source Voltage (V) ID = 1 mA 52 49 46 43 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Drain Source Breakdown vs. Junction Temperature S12-1170-Rev. A, 21-May-12 Document Number: 63470 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ858AEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 1000 IDM Limited 100 ID - Drain Current (A) Limited by RDS(on)* 100 s 10 1 ms 10 ms 100ms, 1 s, 10 s, DC 1 0.1 0.01 0.01 TC = 25 C Single Pulse BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S12-1170-Rev. A, 21-May-12 Document Number: 63470 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ858AEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63470. S12-1170-Rev. A, 21-May-12 Document Number: 63470 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) SO-8L Case Outline for Al Parts Revision: 07-Sep-15 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0 - 0.117 10 0 - 10 ECN: C15-1203-Rev. A, 07-Sep-15 DWG: 6044 Note * Millimeters will gover Revision: 07-Sep-15 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK(R) SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SQJ858AEP-T1-GE3 SQJ858AEP-T1_GE3