SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3508
Issue 4
Page 1 of 3
2N2907ACSM
• Low Power, High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage -60V
VCEO Collector – Emitter Voltage -60V
VEBO Emitter – Base Voltage -5V
IC Continuous Collector Current -600mA
PD Total Power Dissipation at TA = 25°C 500mW
Derate Above 37.5°C 3.08mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
(Each Device)
Symbols Parameters Min. Typ. Max. Units
RθJA Thermal Resistance, Junction To Ambient 325 °C/W
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907ACSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3508
Issue 4
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = -10mA IB = 0 -60 V
VCB = -60V IE = 0 -10 µA
VCB = -50V IE = 0 -10 nA
ICBO Collector Cut-Off Current
TA = 150°C -10 µA
VEB = -5V IC = 0 -10 µA
IEBO Emitter Cut-Off Current VEB = -4V IC = 0 -50 nA
ICES Collector Cut-Off Current VCE = -50V -50 nA
IC = -150mA IB = -15mA -0.4
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = -500mA IB = -50mA -1.6
IC = -150mA IB = -15mA -0.6 -1.3
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = -500mA IB = -50mA -2.6
V
IC = -0.1mA VCE = -10V 75
IC = -1.0mA VCE = -10V 100 450
IC = -10mA VCE = -10V 100
TA = -55°C 50
IC = -150mA VCE = -10V 100 300
hFE
(1)
Forward-current transfer
ratio
IC = -500mA VCE = -10V 50
DYNAMIC CHARACTERISTICS
IC = -20mA VCE = -20V
| hfe | Small signal forward-current
transfer ratio f = 100MHz
2
IC = -1.0mA VCE = -10V
hfe Small Signal Current Gain f = 1.0KHz 100
VCB = -10V IE = 0
Cobo Output Capacitance f = 1.0MHz 8
VEB = -2V IC = 0
Cibo Input Capacitance f = 1.0MHz 30
pF
IC = -150mA VCC = -30V
ton Turn-On Time IB1 = -15mA 45
IC = -150mA VCC = -30V
toff Turn-Off Time IB1 = - IB2 = -15mA 300
ns
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907ACSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3508
Issue 4
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
LCC1
Underside View
Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector
2 1
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012) rad.
rad.
A =
3
