BC107/ BC108/ BC109
Low Power Bipolar Transistors
Page 1 30/05/05 V1.0
TO-18 Features:
NPN Silicon Planar Epitaxial Transistors.
Suitable for applications requiring low noise and good hFE linearity, eg. audio
pre-amplifiers, and instrumentation.
Pin Configuration
1. Emitter.
2. Base.
3. Collector.
TO-18 Metal Can Package
Dimensions : Millimetres
Dimension Minimum Maximum
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E-0.76
F-1.27
G-2.97
H 0.91 1.17
J 0.71 1.21
K 12.70 -
L 45°
BC107/ BC108/ BC109
Low Power Bipolar Transistors
Page 2 30/05/05 V1.0
Absolute Maximum Ratings
Electrical Characteristics (Ta= 25°C Unless Otherwise Specified)
DESCRIPTION SYMBOL BC107 BC108 BC109 UNIT
Collector-Emitter Voltage VCEO 45 25 25 V
Collector-Base Voltage VCBO 50 30 30 V
Emitter-Base Voltage VEBO 6.0 5.0 5.0 V
Collector Current Continuous IC0.2 A
Power Dissipation at Ta = 25°C PD0.6 W
Derate Above 25°C 2.28 mW/°C
Power Dissipation at Tc = 25°C PD 1.0 W
Derate Above 25°C 6.67 mW/°C
Operating And Storage Junction Tj, Tstg -65 to +200 °C
Temperature Range
Thermal Resistance
Junction to Case Rth (j-c) 175 °C/W
Description Symbol Test Condition Minimum Maximum Unit
Collector-Emitter Voltage VCEO IC = 2mA, IB = 0 BC107 45 V
BC108/109 20 V
Emitter-Base Voltage VEBO IE = 10uA, IC = 0 BC107 6.0 V
BC108/109 5.0 V
Collector-Cut off Current ICBO VCB = 45V, IE = 0 BC107 15 nA
VCB = 25V, IE = 0 BC108/109 15 nA
Tamb = 125°C
VCB = 45V, IE = 0 BC107 4.0 uA
VCB = 25V, IE = 0 BC108/109 4.0 uA
BC107/ BC108/ BC109
Low Power Bipolar Transistors
Page 3 30/05/05 V1.0
Description Symbol Test Condition Minimum Maximum Unit
DC Current hFE IC = 10uA, VCE = 5V B Group 40
C Group 100
IC = 2mA, VCE = 5V BC107 110 450
BC108 110 800
BC109 200 800
A Group 110 220
B Group 200 450
C Group 420 800
Base Emitter Saturation Voltage VBE (Sat) IC = 10mA, IB = 0.5mA 0.83 V
IC = 100mA, IB = 5mA 1.05 V
Collector Emitter Saturation Voltage VCE (Sat) IC = 10mA, IB = 0.5mA 0.25 V
IC = 100mA, IB = 5mA 0.60 V
Base Emitter on Voltage VBE (on) IC = 2mA, VCE = 5V 0.55 0.70 V
IC = 10mA, VCE = 5V 0.77 V
Collector Knee Voltage VCE (K) IC = 10mA, IB = The Value for 0.60 V
which IC = 11mA, at VCE = 1V
Transition Frequency ftVCE = 5V, IC =10mA, f = 100MHz 150 MHz
Noise Figure NF VCE = 5V, IC = 0.2mA
Rg = 2kohms,
F = 30Hz to 15 KHz BC109 4.0 dB
F = 1kHz, B = 200Hz BC109 4.0 dB
BC107/108 10 dB
Output Capacitance Cobo VCB = 10V, f = 1MHz 4.5 pF
ALL f = 1kHz
Small Signal Current Gain hFE
IC = 2mA,VCE = 5V BC107 125 500
BC108 125 900
BC109 240 900
A Group 125 260
B Group 240 500
C Group 450 900
ALL f = 1kHz
Input Impedance hie IC = 2mA,VCE = 5V A Group 1.6 4.5 KΩ
B Group 3.2 8.5 KΩ
C Group 6.0 15 KΩ
ALL f = 1kHz
Output Admittance hoe IC = 2mA,VCE = 5V A Group 30 umhos
B Group 60 umhos
C Group 110 umhos
BC107/ BC108/ BC109
Low Power Bipolar Transistors
Page 4 30/05/05 V1.0
VCEO
maximum
(V)
VCBO
maximum
(V)
IC
maximum
(A)
hFE minimum
at IC= 2 (mA)
Noise Figure
maximum
(dB)
Transition
Frequency
minimum
(MHz)
Ptot at
Ta= 25°C
(mW)
Package and
pin out
Part Number
(NPN)
45 50
0.2
125 10
150 600 TO-18
BC107
BC107A
BC107B
25 30
BC108
BC108B
BC108C
240 4
BC109
BC109B
BC109C
Specifications
For enquiries from all other markets
BC107/ BC108/ BC109
Low Power Bipolar Transistors
Page 5 30/05/05 V1.0
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