DS30031 Rev. B-5 2 of 5 BRF92A
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Electrical DC Characteristics @ TA = 25°C unless otherwise specified
Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5 cm2 area.
Characteristic Symbol Min Typ Max Unit Test Condition
DC Current Gain hFE 65 ¾150 ¾VCE = 10V, IC = 14mA
Collector - Emitter Cutoff Current ICES ¾¾100 mAVBE = 0V, VCE = 20V
Collector - Base Cutoff Current ICBO ¾¾50 nA IE = 0V, VCB = 10V
Collector-Base Breakdown Voltage V(BR)CBO 20 ¾¾ VIC = 10mA, IE= 0
Collector-Emitter Breakdown Voltage V(BR)CEO 15 ¾¾ VIC = 1.0mA, IB = 0
Emitter- Base Breakdown Voltage V(BR)EBO 2.0 ¾¾ VIE = 10mA, IC = 0
Characteristic Symbol Min Typ Max Unit Test Condition
Transition Frequency fT5.0 ¾¾GHz VCE = 10V, IC = 14mA,
f = 500MHz
Collector - Base Capacitance Ccbo ¾0.3 ¾pF VCB = 10V, f = 1.0MHz
Collector - Emitter Capacitance Cceo ¾0.15 ¾pF VCE = 10V, f =1.0MHz
Emitter - Base Capacitance Cebo ¾0.65 pF VEB = 0.5V, f =1.0MHz
Noise Figure NF ¾1.8 ¾dB VCE = 10V, IC = 2.0mA,
ZS = 50W, f = 800MHz
Power Gain Gpe ¾16 ¾dB
VCE = 10V, IC = 14mA,
ZS = 50W, ZL = Zlopt,
f = 800MHz
Linear Fall Time V1 = V2¾120 ¾mV
VCE = 10V, IC = 14mA,
dIM = 60dB, ZS = ZL = 50W,
f1 = 806MHz, f2 = 810MHz
Third Order Intercept Point IP3¾24 ¾dBm VCE = 10V, IC = 14mA,
f = 800MHz
Electrical AC Characteristics @ TA = 25°C unless otherwise specified