1
2
TAB
3
H2PAK-2
D(TAB)
G(1)
S(2,3) NCHG1DTABS23TZ
Features
Order code VDS RDS(on) max. IDPTOT
STH13N120K5-2AG 1200 V 690 mΩ 12 A 219 W
• AEC-Q101 qualified
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5
technology based on an innovative proprietary vertical structure. The result is a
dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.
Product status link
STH13N120K5-2AG
Product summary
Order code STH13N120K5-2AG
Marking 13N120K5
Package H²PAK-2
Packing Tape and reel
Automotive-grade N-channel 1200 V, 630 mΩ typ., 12 A, MDmesh K5 Power
MOSFET in an H²PAK‑2 package
STH13N120K5-2AG
Datasheet
DS12917 - Rev 2 - September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ±30 V
ID
Drain current at TC = 25 °C 12 A
Drain current at TC = 100 °C 7.6 A
IDM(1) Drain current (pulsed) 28 A
PTOT Total power dissipation at TC = 25 °C 219 W
IAR(2) Maximum current during repetitive or single-pulse avalanche 4 A
EAS(3) Single-pulse avalanche energy 600 mJ
dv/dt(4) Peak diode recovery voltage slope 4.5 V/ns
dv/dt(5) MOSFET dv/dt ruggedness 50 V/ns
TjOperating junction temperature range
-55 to 150 °C
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. Pulse width limited by TJmax.
3. Starting TJ = 25 °C, ID=IAR, VDD= 50 V
4. ISD ≤ 12 A, di/dt ≤ 100 A/µs, VDS (peak) ≤ V(BR)DSS
5. VDS ≤ 960 V
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.57 °C/W
Rthj-pcb(1) Thermal resistance junction-pcb 30 °C/W
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
STH13N120K5-2AG
Electrical ratings
DS12917 - Rev 2 page 2/15
2Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1200 V
IDSS Zero gate voltage drain current
VGS = 0 V, VDS = 1200 V 1 µA
VGS = 0 V, VDS = 1200 V,
Tc = 125 °C(1) 100 µA
IGSS Gate body leakage current VDS = 0 V, VGS = ± 20 V ±5 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V
RDS(on) Static drain-source on- resistance VGS = 10 V, ID= 6 A 630 690 mΩ
1. Defined by design, not subject to production test.
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VGS = 0 V, VDS = 100 V,
f = 1 MHz
- 1360 - pF
Coss Output capacitance - 105 - pF
Crss Reverse transfer capacitance - 0.9 - pF
Co(tr)(1) Time-related equivalent
capacitance VGS = 0 V, VDS = 0 to 960 V
- 118 - pF
Co(er)(2) Energy-related equivalent
capacitance - 42 - pF
RGIntrinsic gate resistance f = 1 MHz, ID = 0 A - 3.2 - Ω
QgTotal gate charge VDD = 960 V, ID = 12 A
VGS = 0 to 10 V
(see Figure 14. Test circuit for gate
charge behavior)
- 41.1 - nC
Qgs Gate-source charge - 9.9 - nC
Qgd Gate-drain charge - 25.2 - nC
1. Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases
from 0 to 80% VDSS.
2. Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases
from 0 to 80% VDSS .
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 600 V, ID = 6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13. Test circuit for
resistive load switching times and
Figure 18. Switching time
waveform)
- 17.5 - ns
trRise time - 9 - ns
td(off) Turn-off delay time - 56 - ns
tfFall time - 22 - ns
STH13N120K5-2AG
Electrical characteristics
DS12917 - Rev 2 page 3/15
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 12 A
ISDM Source-drain current (pulsed) - 28 A
VSD(1) Forward on voltage ISD = 12 A, VGS = 0 V - 1.5 V
trr Reverse recovery time ISD = 12 A, VDD = 60 V
di/dt = 100 A/µs,
(see Figure 15. Test circuit for
inductive load switching and diode
recovery times)
- 650 ns
Qrr Reverse recovery charge - 11 µC
IRRM Reverse recovery current - 33 A
trr Reverse recovery time ISD = 12 A,VDD = 60 V
di/dt = 100 A/µs, Tj = 150 °C
(see Figure 15. Test circuit for
inductive load switching and diode
recovery times)
- 950 ns
Qrr Reverse recovery charge - 13.5 µC
IRRM Reverse recovery current - 31.5 A
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 7. Gate-source Zener diode
Symbol Parameter Test conditions Min Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A 30 - V
The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the
device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity.
These integrated Zener diodes thus eliminate the need for external components.
STH13N120K5-2AG
Electrical characteristics
DS12917 - Rev 2 page 4/15
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
GADG100920191147SOA
10 1
10 0
10 -1
10 -2
10 -1 10 0 10 1 10 2 10 3
ID
(A)
VDS (V)
Operation in this area
is limited by RDS(on)
RDS(on) max.
Single pulse, TC =25°C
TJ ≤150°C, VGS =10V
V(BR)DSS
tp =10ms
tp =10µs
tp =100µs
tp =1ms
tp =1µs
IDM
Figure 2. Maximum transient thermal impedance
GADG100920191147ZTH
10 -1
10 -2
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
ZthJ-C
tp (s)
(°C/W)
duty = 0.5
RthJ-C = 0.57 °C/W
0.4 0.3 0.2
0.1
0.05
Single pulse
Figure 3. Typical output characteristics
GADG100920191149RCC-50
24
20
16
12
8
4
00 4 8 12 16 20 24
ID
(A)
VDS (V)
VGS = 10V
VGS = 9V
VGS = 8V
VGS = 7V
VGS = 6V
Figure 4. Typical transfer characteristics
GADG100920191149TCH
24
20
16
12
8
4
04 5 6 7 8 9
ID
(A)
VGS (V)
VDS = 20V
Figure 5. Typical gate charge characteristics
GADG100920191150QVG
1000
800
600
400
200
0
10
8
6
4
2
0
0 8 16 24 32 40
VDS
(V)
VGS
(V)
Qg (nC)
VDD = 960V, ID = 12A
Qg
Qgs Qgd
Figure 6. Typical drain-source on-resistance
GADG100920191158RID
690
670
650
630
610
5900 2 4 6 8 10 12
RDS(on)
(mΩ)
ID (A)
VGS =10V
STH13N120K5-2AG
Electrical characteristics (curves)
DS12917 - Rev 2 page 5/15
Figure 7. Typical capacitance characteristics
GADG100920191159CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 -1 10 0 10 1 10 2 10 3
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 8. Typical output capacitance stored energy
Eoss
8
4
0
0200 VDS(V)
(µJ)
800
400 600
12
1000
16
20
24
GIPD300320151232MT
Figure 9. Normalized gate threshold vs temperature
VGS(th)
1.0
0.8
0.6
0.4
-75 TJ(°C)
(norm)
-25
1.2
25 75
ID=100µA
125
GIPD300320151241MT
Figure 10. Normalized on-resistance vs temperature
1.5
1.0
0.5
0.0
TJ(°C)
2.0
2.5
RDS(on)
(norm)
VGS=10V
-75 -25 25 75 125
GIPD300320151244MT
Figure 11. Normalized breakdown voltage vs temperature
V(BR)DSS
-75 TJ(°C)
(norm)
-25 75
25 125
0.84
0.92
1.00
1.08
ID=1mA
GIPD300320151249MT
Figure 12. Typical reverse diode forward characteristics
VSD
4ISD(A)
(V)
210
68
0.5
0.6
0.7
0.8
TJ=-50°C
TJ=150°C
TJ=25°C
0.9
GIPD300320151251MT
STH13N120K5-2AG
Electrical characteristics (curves)
DS12917 - Rev 2 page 6/15
3Test circuits
Figure 13. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200
μF VDD
3.3
μF
+
pulse width
VGS
Figure 14. Test circuit for gate charge behavior
AM01469v1
47 kΩ 1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST 100 Ω
100 nF
D.U.T.
+
pulse width
VGS
2200
μF
VG
VDD
Figure 15. Test circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T.
SB
G
25 Ω
AA
BB
RG
G
D
S
100 µH
µF
3.3 1000
µF VDD
D.U.T.
+
_
+
fast
diode
Figure 16. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD
+
pulse width
Vi
3.3
µF
2200
µF
Figure 17. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
Figure 18. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STH13N120K5-2AG
Test circuits
DS12917 - Rev 2 page 7/15
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
STH13N120K5-2AG
Package information
DS12917 - Rev 2 page 8/15
4.1 H²PAK-2 package information
Figure 19. H²PAK-2 package outline
STH13N120K5-2AG
H²PAK-2 package information
DS12917 - Rev 2 page 9/15
Table 8. H²PAK-2 package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.30
-
4.70
A1 0.03 0.20
C 1.17 1.37
e 4.98 5.18
E 0.50 0.90
F 0.78 0.85
H 10.00 10.40
H1 7.40 7.80
L 15.30 15.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.85 7.25
L4 1.5 1.7
M 2.6 2.9
R 0.20 0.60
V 0° 8°
Figure 20. H²PAK-2 recommended footprint
Note: Dimensions are in mm.
STH13N120K5-2AG
H²PAK-2 package information
DS12917 - Rev 2 page 10/15
4.2 H²PAK-2 packing information
Figure 21. Tape outline
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
STH13N120K5-2AG
Packing information
DS12917 - Rev 2 page 11/15
Figure 22. Reel outline
A
D
B
Full radius
Tape slot
In core for
Tape start
G measured
At hub
C
N
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
T
Table 9. Tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
STH13N120K5-2AG
Packing information
DS12917 - Rev 2 page 12/15
Revision history
Table 10. Document revision history
Date Version Changes
14-Feb-2019 1 First release.
10-Sep-2019 2
Updated title and features in cover page.
Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and
Section 2.1 Electrical characteristics (curves).
Minor text changes.
STH13N120K5-2AG
DS12917 - Rev 2 page 13/15
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3Test circuits .......................................................................7
4Package information...............................................................8
4.1 H²PAK-2 package information ....................................................8
4.2 H²PAK-2 packing information....................................................10
Revision history .......................................................................13
STH13N120K5-2AG
Contents
DS12917 - Rev 2 page 14/15
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STH13N120K5-2AG
DS12917 - Rev 2 page 15/15