PZTA14 NPN Silicon Darlington Transistor * For general AF applications 4 * High collector current 3 2 * High current gain 1 * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking PZTA14 PZTA14 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 Collector current IC 300 Peak collector current, tp 10 ms ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1.5 W Junction temperature Tj 150 C Storage temperature Tstg V mA TS 124 C -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 17 K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-04 PZTA14 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CBO 30 - - V(BR)CES 30 - - V(BR)EBO 10 - - DC Characteristics Collector-base breakdown voltage V IC = 100 A, IE = 0 Collector-emitter breakdown voltage IC = 100 A, VBE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 C - - 10 - - 100 Emitter-base cutoff current IEBO nA VEB = 10 V, IC = 0 DC current gain1) - hFE IC = 10 mA, VCE = 5 V 10000 - - IC = 100 mA, VCE = 5 V 20000 - - VCEsat - - 1.5 VBEsat - - 2 125 - - MHz - 3 - pF Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency fT IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1Pulse test: t < 300s; D < 2% 2 2011-10-04 PZTA14 DC current gain hFE = (IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = (VCEsat ), hFE = 1000 PZTA 13/14 EHP00719 PZTA 13/14 10 3 EHP00720 mA 5 C 125 C 10 5 150 C 25 C -50 C 10 2 25 C 5 5 -55 C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 mA 10 10 0 3 0 0.5 1.0 V C V CEsat Collector cutoff current ICBO = (TA) VCBO = 30 V Base-emitter saturation voltage IC = (VBEsat), hFE = 1000 10 3 1.5 PZTA 13/14 EHP00721 10 4 mA PZTA 13/14 EHP00718 nA C CB0 150 C 25 C -50 C 10 2 max 10 3 5 5 typ 10 2 5 10 1 10 1 5 5 10 0 0 1.0 2.0 V 10 0 3.0 V BEsat 0 50 100 C 150 TA 3 2011-10-04 PZTA14 Transition frequency fT = (IC) VCE = 5 V, f = 200 MHz 10 3 MHz Emitter-base capacitance Ceb = (VEB) EHP00717 19 pF 5 CCB/CEB fT PZTA 13/14 Collector-base capacitance Ccb = (VCB) 15 13 11 10 2 CEB 9 5 7 5 CCB 3 10 1 10 0 5 10 1 5 10 2 mA 1 0 10 3 4 8 12 16 V C Total power dissipation P tot = (TS) 22 VCB/VEB Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 1650 mW PZTA 13/14 Ptot max 5 Ptot DC EHP00311 D= 1350 tp T tp T Ptot 1200 10 2 1050 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 900 750 600 10 1 450 5 300 150 0 0 15 30 45 60 75 90 105 120 C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-10-04 Package SOT223 1.60.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 15 MAX. 4 3.5 0.2 Package Outline PZTA14 4.6 0.28 0.04 0...10 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 5 2011-10-04 PZTA14 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-10-04