(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium-Power Complementary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. * High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage - @ 100 mAdc - VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 = 100 Vdc (Min) - 2N6042, 2N6045 * Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045 * Monolithic Construction with Built-In Base-Emitter Shunt Resistors * EPOXY MEETS UL 94, V-0 @ 0.125 in * ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V IIIIIIIIIIIIIIIIIII IIIIIIIIII III IIII IIII II IIIIIIIIIIIIIIIIIII IIIIIIIIII III IIII IIII II IIIIIIIIII III IIII IIII II IIIIIIIIII III IIIIIII II IIII IIII IIIIIIIIII III IIIIIII II II IIIIIIIIII III IIIIIII IIIIIIIIII III IIIIIII II IIIIIIIIII III IIIIIII II II IIIIIIIIII III IIIIIII IIIIIIIIII III IIIIIII II II IIIIIIIIII III IIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIII III IIIIIII II IIIIIIIIII III IIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIII III IIIIIII II IIIIIIIIII III IIIIIII II II IIIIIIIIII III IIIIIII IIIIIIIIII III IIIIIII II MAXIMUM RATINGS (Note 1) Rating Symbol 2N6040 2N6043 2N6042 2N6045 Unit Collector-Emitter Voltage VCEO 60 100 Vdc Collector-Base Voltage VCB 60 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 8.0 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 75 0.60 W W/C - 65 to + 150 C Collector Current- Continuous Peak Operating and Storage Junction, Temperature Range TJ, Tstg http://onsemi.com DARLINGTON, 8 A COMPLEMENTARY SILICON POWER TRANSISTORS 60 V - 100 V, 75 W MARKING DIAGRAM 4 AYWW 2Nxxxx 1 2 3 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR TO-220AB CASE 221A-09 Style 1 xxxx = Specific Device Code: 6040, 6042, 6043, 6045 A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Package Shipping 2N6040 Device TO-220AB 50 Units / Rail 2N6042 TO-220AB 50 Units / Rail 2N6043 TO-220AB 50 Units / Rail TO-220AB 50 Units / Rail THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case JC 1.67 C/W 2N6045 Thermal Resistance, Junction to Ambient JA 57 C/W *Preferred devices are recommended choices for future use and best overall value. 1. Indicates JEDEC Registered Data. Semiconductor Components Industries, LLC, 2003 August, 2003 - Rev. 5 1 Publication Order Number: 2N6040/D (PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III Figure 1. Power Derating *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 100 - - - 20 20 - - - - - 20 20 200 200 200 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) 2N6040, 2N6043 Vdc - 2N6042, 2N6045 A Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) 2N6040, 2N6043 2N6042, 2N6045 ICEO Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) 2N6040, 2N6043 - 20 2N6042, 2N6045 - 20 - 2.0 1000 1000 100 20.000 20,000 - - - - 2.0 2.0 4.0 A ICEX A ICBO (VCB = 100 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) 2N6040, 2N6043, 2N6042, 2N6045 All Types hFE Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 3.0 Adc, IB = 12 mAdc) (IC = 8.0 Adc, IB = 80 Adc) 2N6040, 2N6043, 2N6042, 2N6045 All Types - VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) VBE(sat) - 4.5 Vdc Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) - 2.8 Vdc Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |hfe| 4.0 - Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob - - 300 200 pF hfe 300 - - DYNAMIC CHARACTERISTICS 2N6040/2N6042 2N6043/2N6045 Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. http://onsemi.com 2 (PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* 5.0 RC SCOPE TUT V2 approx +8.0 V RB 51 0 V1 approx -12 V D1 8.0 k 120 +4.0 V 25 s for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities and D1. tr, tf 10 ns DUTY CYCLE = 1.0% ts 2.0 t, TIME (s) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 3.0 VCC -30 V 0.7 0.5 0.3 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 0.1 TJ = 25C PNP td @ VBE(off) = 0 V 0.07 NPN 0.05 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Equivalent Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.02 0.05 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.01 0.05 5.0 7.0 10 P(pk) JC(t) = r(t) JC JC = 1.67C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.03 tr Figure 3. Switching Times 0.2 0.1 0.07 0.05 tf 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 10 500 s 1.0ms dc 5.0ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040, 2N6043 2N6045 20 30 5.0 7.0 10 2.0 3.0 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area http://onsemi.com 3 (PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* 300 5000 3000 2000 200 TJ = 25C C, CAPACITANCE (pF) hfe, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 1.0 5.0 Cib 70 50 PNP NPN 2.0 Cob 100 PNP NPN 10 20 50 100 f, FREQUENCY (kHz) 30 0.1 500 1000 200 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 6. Small-Signal Current Gain http://onsemi.com 4 50 100 (PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* PNP 2N6040, 2N6042 NPN 2N6043, 2N6045 20,000 20,000 7000 5000 10,000 hFE , DC CURRENT GAIN 10,000 hFE , DC CURRENT GAIN VCE = 4.0 V VCE = 4.0 V TJ = 150C 3000 2000 25C 1000 700 500 -55 C 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 7000 5000 TJ = 150C 3000 2000 25C 1000 700 500 -55 C 300 200 0.1 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 TJ = 25C 2.6 IC = 2.0 A 6.0 A 4.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 20 5.0 7.0 10 2.0 3.0 IB, BASE CURRENT (mA) 30 3.0 TJ = 25C 2.6 IC = 2.0 A 6.0 A 4.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 7.0 10 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25C TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 0.5 7.010 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 5 5.0 (PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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