IRFH5007PbF HEXFET(R) Power MOSFET VDS 75 V R DS(on) max 5.9 m Qg (typical) 65 nC RG (typical) 1.2 (@V GS = 10V) ID (@Tmb = 25C) h 100 A PQFN 5X6 mm Applications * * * * Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 5.9m) Low Thermal Resistance to PCB ( 0.8C/W) 100% Rg tested Low Profile ( 0.9 mm) Lower Conduction Losses Enables Better Thermal Dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Base Part Number Package Type IRFH5007PBF PQFN 5mm x 6mm Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH5007TRPBF Absolute Maximum Ratings Max. Units VDS VGS Drain-to-Source Voltage Gate-to-Source Voltage 75 20 V ID @ TA = 25C ID @ TA = 70C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 17 13 ID @ Tmb = 25C ID @ Tmb = 100C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation 100 88 Parameter IDM PD @TA = 25C c PD @ Tmb = 25C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range h 400 3.6 156 g 0.029 -55 to + 150 A W W/C C Notes through are on page 9 1 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5007PbF Static @ TJ = 25C (unless otherwise specified) BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS Output Charge Min. 75 --- --- 2.0 --- --- --- --- --- 100 --- --- --- --- --- --- --- Typ. --- 0.09 5.1 --- -8.4 --- --- --- --- --- 65 11 4.5 20 29.5 24.5 21 Conditions Max. Units --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 5.9 m VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150A --- mV/C VDS = 75V, VGS = 0V 20 A VDS = 75V, VGS = 0V, TJ = 125C 250 VGS = 20V 100 nA VGS = -20V -100 --- S VDS = 15V, ID = 50A 98 --- VDS = 38V VGS = 10V --- nC --- ID = 50A --- See Fig.17 & 18 --- --- nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- --- --- --- --- --- 1.2 10 14 30 11 4290 510 210 --- --- --- --- --- --- --- --- Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e ns pF VDD = 38V, VGS = 10V ID = 50A RG=1.8 See Fig.15 VGS = 0V VDS = 25V = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics c Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton Typ. --- --- d Units mJ A Max. 250 50 Min. Typ. Max. Units h --- --- 100 c --- --- 400 A Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V TJ = 25C, IF = 50A, VDD = 38V di/dt = 500A/s --- --- 1.3 V --- 31 47 ns --- 170 255 nC Time is dominated by parasitic Inductance e S e Thermal Resistance Parameter Junction-to-Mounting Base Junction-to-Case Junction-to-Ambient R JC-mb R JC (Top) R JA f R JA (<10s) 2 g Junction-to-Ambient g www.irf.com (c) 2015 International Rectifier Typ. Max. Units 0.5 --- --- 0.8 15 35 C/W --- 22 Submit Datasheet Feedback May 19, 2015 IRFH5007PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.25V 4.0V 3.75V 100 10 1 3.75V BOTTOM 3.75V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 1 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 100 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 150C 10 T J = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 ID = 50A VGS = 10V 2.0 1.5 1.0 0.5 2 3 4 5 6 7 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 50A VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Crss 100 12.0 VDS= 60V VDS= 38V VDS= 15V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 8.0V 6.0V 5.0V 4.5V 4.25V 4.0V 3.75V www.irf.com (c) 2015 International Rectifier 0 20 40 60 80 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback May 19, 2015 IRFH5007PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150C 100 T J = 25C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 10 10msec 1 DC Tc = 25C Tj = 150C Single Pulse 0.1 VGS = 0V 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 120 4.0 VGS(th) , Gate threshold Voltage (V) Limited By Package 100 ID, Drain Current (A) 100sec 1msec 100 80 60 40 20 0 3.5 3.0 2.5 2.0 1.5 ID = 150A ID = 500A ID = 1.0mA ID = 1.0A 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (C) 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base 4 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 16 1100 ID = 50A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFH5007PbF 12 T J = 125C 10 8 T J = 25C 6 ID 6.6A 13A BOTTOM 50A 1000 14 4 2 TOP 900 800 700 600 500 400 300 200 100 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125C and Tstart =25C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 125C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5007PbF D.U.T Driver Gate Drive + - - D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * * * * * D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG Period P.W. + V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A I AS 0.01 tp Fig 16a. Unclamped Inductive Test Circuit V DS VGS RG Fig 16b. Unclamped Inductive Waveforms VDS RD 90% D.U.T. + -V DD 10% VGS V10V GS Pulse Width 1 s Duty Factor 0.1 td(on) Fig 17a. Switching Time Test Circuit tr td(off) tf Fig 17b. Switching Time Waveforms Id Vds Vgs L DUT 0 s VCC 1K Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com (c) 2015 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform Submit Datasheet Feedback May 19, 2015 IRFH5007PbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5007PbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPT ION Dimension design to accommodate the component width Dimens ion design to accommodate the component lenght Dimens ion design to accommodate the component thickness Overall width of the carrier tape Pitch between s uccess ive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package Type Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5007PbF Qualification information Industrial Qualification level (per JE DE C JES D47F Moisture Sensitivity Level PQFN 5mm x 6mm RoHS compliant guidelines ) MS L1 (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.20mH, RG = 25, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Revision History Date 4/28/2015 5/19/2015 Comment * Updated package outline for "option B" and added package outline for "option G" on page 7 * Updated tape and reel on page 8. * Updated package outline for "option G" on page 7. * Updated "IFX logo" on page 1 and page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 19, 2015