PZT2907AT3 - Motorola / Freescale Semiconductor

MOTOROU

SEMICONDUCTOR TECHNICAL DATA Order this document

by P~2907ATllD

PNP Silicon

EpitmiaI Wansistor

This PNP Silicon Epitaxial transistor is designed for use in linear and

switching applications. The device is housed in the SOT-223 package which is

designed for medium power surface mount applications.

●NPN Complement is PZT2222AT1

oThe SOT-223 package can be soldered using wave or reflow

oSOT-223 package ensures level mounting, resulting in improved thermal

conduction, and allows visual inspection of soldered joints. The formed

leads absorb thermal stress during soldering eliminating the possibili~ of

damage to the die.

aAvailable in 12 mm tape and reel

Use PZT2907AT1 to order the 7inc~l 000 unit reel.

Use PZT2907AT3 to order the 13 inch/4000 unit reel. BASE

P2T2907ATI

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MAXIMUM RATINGS WC= 25°C unless othewise noted) .$,,,ll,.,;!y’‘

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Rating c,.~~,~,\~\\ Symbol Value Unit

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Collector-Em.NerVoltage VCEO -60 Vdc

Collector-Base Voltage VCBO -60 Vdc

Emitter-Base Voltage ,$~; VEBO -5.0 Vdc

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Collector Current ,1,,*,, Ic -600 mAdc

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Total Power Dissipation @TA =25”C(1) pD 1.5 Watts

Derate above 25°C 12 mW/OC

TJI Tstg -65 to 150 ‘c

THERMAL CHARACTERISTICS “’ii.?$F“

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Thermal Resistance —Junctio~~&@ti~ent (sutiace mounted) R9JA 83.3 ‘CM

Lead Temperature for Sold@n&&@~@825”from case TL 260 ‘c

Time in Solder Bath ~t,*s~~&~W~$ 10 Sec

DEVICE MARKING ‘F’:,.f

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ELECTRl~~aARACTERISTICS flA =25°C unlessotherwise noted)

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~Symbol Min Typ Max Unit

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OF~!~H~$~CTERISTICS

r*Or-Base Breakdown Voltage (Ic =-10 @de, IE =O) IV~BR~CBO -601—1— Vdc

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‘$v’.YG’ollector-Emitier Breakdown Voltage (Ic =10 mAdc, IB =O) V(BR)CEO -60 — — Vdc

‘b Emitter-Base Breakdown Voltage (IE =-10 @de, Ic =O) V(BR)EBO -5.0 ——Vdc

Collector-Base Cutoff Cument (VCB =-50 Vdc, IE =O) iCBO — — -10 nAdc

Collector-Emitter Cutoff Current ~CE =-30 Vdo, VBE =0.5 Vdc) tCEX — — –50 nAdc

Bas&Emitier Cutoff Current (VCE =-30 Vdc, VBE =-0.5 Vdc) IBEX — — -50 nAdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x1.575 in. x0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

—Thermal Clad is atrademark ofthe Bergquist Company

Preferred devicesare Motorolareccmmend~ choices for future uae and beat overall value.

—

REV 4

@MO-ROLA

@Motorola,Inc.1994

ELECTRICAL CHARACTERISTICS — continued ~A =25°Cunlessothe~ise noted)

Characteristic Symbol Min ITyp IMax IUnit I

ONCHARACTERISTICS(2)

DC Current Gain hFE

(1C=-0.1 mAdc, VCE =-10 Vdc) 75 —

(1C=-1.0 rnAdc, VCE =-10 Vdc) 100 —

(Ic =-10 mAdc, VCE =-10 Vdc) 100 —

(Ic =-150 rnAdc, VCE =-10 Vdc) 100 —

(1C=-500 mAdc, VCE =-10 Vdc) 50 —

Colleotor-Emitter Saturation Voltages vCE(sat)

(ic =-150 rnAdc, IB =-15 mAdc) ——

(1C=-500 mAdc, IB =-50 mAdc) —

BaaeEmitier Saturation Voltages VBE(sat)

(1C=-150 rnAdc, IB =-15 mAdc)

(Ic =-500 mAdc, IB =-50 mAdc) — —

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DYNAMIC CHARACTERISTICS .!,

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Current-Gain —Bandwidth Product (1c=-50 mAdc, VCE =-20 Vdc, f=100 MHz) ~200+*?”:t.a?~”

!;’’!.i& —MHz

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Output Capacitance (VCB =-10 Vdc, IE =O,f=1.0 MHz) cc ;<s\.\:’‘.:?,—

q,~: ?,.,<+ 8.0 pF

Input Capacitance (VEB =-2.0 Vdc, IC =O,f=1.0 MHz) Ce

SWITCHINGTIMES

TurnQn Time

Delay ~me (VCC =-30 Vdc, IC =-150 mAdc,

IB1 =-15 rnAdc)

Rise Time .’

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.<+>,.s:,:,,,\‘*’ tr — — 40

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Turn-Off Tme ,w~+.,t~b:\

\]; tofi — — 100 ns

Storage Tme (VCC =-6.0 Vdc, IC =-150 mAdc, ,,, ~Q~~teY~5 t~ __80

iBI =IB2 =-15 mAdc) *J<::.;...:,.~+~.;?,.

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Fall Tme ‘ii tf — — 30 —

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2. Pulse Test Pulse Width< 300 W, Duty Cycle= 2.0%. ‘“’ “

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t15v -6.0 V

RISETIME <5.0 ns

INPUT ;? INPUT

~=50Q .!$ ZC=50Q l.Ok

PRF=150 Hz PRF=150 HZ

RISETIME<2.0 ns TOOSCILLOSCOPE RISETIMEs 2.0 mTOOSCILLOSCOPE

l,Ok

RISETIME <5.0 ns

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Figure 1. Delay and Rise Figure 2. Storage and Fall

Time Test Circuit Time Test Circuit

2Motorola Small+gnal Transistors, FHs and Diodes Device Data

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PZT2907AT1

TYPICALELECTRICAL CHARACTERISTICS

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1000

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‘;,,,.1111 I I 111111[

-1000 -1,0 -10 “dJ\$,, 7-1oo -1000

Ic, COLLECTORCURRENT (mA) lc,$M@CURRENT (MA)

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Figure 3. DC Current Gain

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-1.0 I I IIll 11111Ilffl 30

TJ =25°C 1111 1111111 1-

111II Ill I111111111M

[11111 II

I I I 111111 I [ M

7.0

5.0

3.0

2.0

REVERSEVOLTAGE~OLTS)

Figure 6. Capacitances

Motorola Small+gnal Transistors, FHs and Diodes Device Data 3

PZT2907AT1

INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

POWER DISSIPATION

The power dissipation of the SOT-223 is afunction of the

input pad size. These can vary from the minimum pad size

for soldering to the pad size given for maximum power

dissipation. Power dissipation for asurface mount device is

determined byTJ(m=), the maximum ratedjunction tempera-

ture of the die, ReJA, the thermal resistance from the device

junction to ambient; and the operating temperature, TA.

Using the values provided on the data sheet for the SOT-223

package, PD can be calculated as follows.

PD=TJ(m~) -TA

R9JA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

MOUNTING

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to ahigh temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

.Always preheat the device.

●The delta temperature between the preheat and soldering

should be 10O°C or less.*

.When preheating and soldering, the temperature of t~

the equation for an ambient temperature TA of 25°C, one can

calculate the power dissipation of the device which in this

case is 1.5 watts.

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$*$

The 83.3°CW for the SOT-223 package assu~~e~~g

recommended collector pad area of 965 sq. m~,~,~i~~fkss

epoxy printed circuit board to achieve apow$f m-~fion of

1.5 watts. If space is at apremium, q$~r&}ealistic

approach is to use the device at aPD ,~%m~ using the

footprint shown. Using aboard ma~erl~k~ch as Thermal

Clad, apower dissipation of 1.6 w~~~an be achieved using

the same footprint. ,1,‘.:%~\.,~

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●The soldering tewatuk and time should not exceed

260°C for more,t$@XO seconds.

●When shiftin~~~ro~,‘preheating to soldering, the maximum

temperat@,-nt should be 5°C or less.

.After sddek has been completed, the device should be

alloM,., to cool naturally for at least three minutes.

Q@~a~cooling should be used as the use of forced

‘~,$~/~& will increase the temperature gradient and result

:i$~:~~;latentfailure due to mechanical stress.

Y•’~~echanical stress or shock should not be applied during _

cooling

leads and the case must not exceed the maxi~~’~?:,

temperature ratings as shown on the data shee~.- —

●Soldering adevice without preheating can cause excessive

using infrared heating with the reflow solderin$~~$@d, thermal shock and stress which can result in damage to the

the difference should be a maximum of 10°C.:&Lk,yJF’$ device.

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MINIMUM RECOMMENQ~k+~OTPRINT FOR SURFACE MOUNTED APPLICATIONS ‘

Surface mount board layout is acri~$~ ##on of the total interface between the board and the package. With the

design. The footprint for the semi-r packages must correct pad geometry, the packages will self align when

be the correct size to insur~~~~$? solder connection subjected to asolder reflow process.

0.079 1

L0.059 0.059 0.059 (–)

inches

T1.5 Tmm —

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4Motorola Small+gnal Transistors, FETs and Diodes Device Data

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PZT2907ATI

PACKAGEDIMENSIONS

7:F NOWS

‘d 1. DIMENSIONINGANDTOERANCING PERANSI

Y14,5M,1%2.

4STYE 1: 2. OO~OWNG DIMENSION INCH.

sPIN1. SASE

1 13 B2. ~WCTOR

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M~ER

4, 00UE~OR

Motorola Small-gnal Transistors, FHs and Diodes Device Data 5

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Pm2907ATl

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Motorola reeervesthe rightto m#c@~&#wtihoM fuflhernoti~toany Products herein. Motorola makes nowarranty, representation or9uamntee re9ar~n9

the suitability of its products,for ~~@culsr Purpose, nor do- Motorola assume any litih~ arising out of the appfi=tion or use of any product or circuit,

and specifically disclaims ~,~pd ailtillw, includingWifhOUffimifationconsequential or incidental damages. ‘Typical” parameters can and do vary indifferent

applications.Alloperat@ .m@ers, includng'TWi~is'' muskvalidated foreachcusomer application bycustomer'stechni=le xWfis. M@orolado=

“Q

notconveyeny ficen~e~d ,.: patent rfghtsnorthe fi9htsofothers. Motorola Pr~u~arenot d=ign4, itiended, ora@hofizedfor use=comPone~in

systems intended ~~w .IImplant intothe My, Oro~er applications intended to support or sustain tife, or for any other apphmtion inwhich the failure of

the Motorola pr~d, ou create aSitUafiOnwhere personal injUV or death may occur. Should Buyer purchase or use Motorola products for any such

unintended orw- edappticstion, BuYershallindemnifi and hold Motorola and ksofficers, employees, su~~arfes, a~fiat*, and ~stfib~ors ha~less

against af~.~’~,:coefs; damages, and expanses, ~d r-nsble attorney fees arising out of, dire~y or indirectly, any claim of personal inju~ or death

~iat@,witkatich unintended or unamhodz~ use, even ifsuch claim alleges thet Motorola was n~tigent regarding the design or manufacture of the part.

Mot-~.~ are registered tradema* of Motorola, lnC.Motorola, Inc. is an Equal Opportunity/Affirmative Adon Employer.

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Literature Dietrfbution@nteM

USA Motorola Literature Distribution P.O. Box 20912 Phoenix, Arizona 85036.

EUROPE Motorola Ltd.; European Literature Centr% 88 Tanners Drive,Blakelands, Milton Keynes,MK145BP, England.

JAPAN Nippon Motorola Ltd; H2-1, NishiGotanda, Shinagewa-ku, Tokyo 141, Japan.

ASIA PACIFIC Motorola Semiconductors H.K. Ltd; Silicon HarbourCenter, No. 2Dai KingStreet, Tai Po Industrial Estate,Tai Po, N.T., Hong Kong.

@MO-ROLA P=2907ATIID

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