QS043-402-203922/5 94.0 80 0.25 12.0 11.0 12.0 11.0 12.0 7(G2) 6(E2) 2-O6.5 2 1 7 6 3 5 4 3-M5 23.0 9 30 +1.0 - 0 .5 14 23.0 9 14 17.0 14 4-fasten tab #110 t=0.5 21.2 7.5 5(E1) 4(G1) 4 (C1) 3 4 18.0 (E2) 2 48.0 16.0 14.0 (C2E1) 1 7 LABEL Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange , . . (kgfcm) ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 600V, = 0V . = 20V,= 0V . ollector-mitter aturation oltage = 200A,= 15V . . ate-mitter hreshold oltage = 5V,= 200mA . . 10,000 . . . . . . . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime 300V 1.5 3.6 15V orward urrent = 10V,= 0V,= 1MH = = = = eak orward oltage everse ecovery ime . . . = 200A,= 0V . . = 200A,= -10V i/t= 400A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc 00 QS043-402-203923/5 Fig.1- Output Characteristics (Typical) VGE=20V 350 VGE=20V 12V 350 15V 11V 300 250 200 10V 150 9V 100 15V 300 11V 250 10V 200 150 9V 100 50 8V 0 1 2 3 4 0 5 0 1 Collector to Emitter Voltage VCE (V) 400A 200A 12 10 8 6 4 2 0 4 8 12 16 IC=100A 14 200A 10 8 6 4 2 0 4 8 VGE=0V f=1MHZ T C=25C 14 VCE =300V 200 8 200V 150 6 100V 100 4 2 50 200 400 600 0 800 30000 Capacitance C (pF) 10 250 20 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 12 0 16 100000 16 300 0 12 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) 350 400A 12 0 20 Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) RL =1.5( TC=25C 5 T C=125C Gate to Emitter Voltage VGE (V) 400 4 16 Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) IC=100A 14 3 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C 16 2 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 0 12V 8V 50 0 T C=125C 400 Collector Current I C (A) Collector Current I C (A) Fig.2- Output Characteristics (Typical) T C=25C 400 Cies 10000 Coes 3000 Cres 1000 300 100 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 00 QS043-402-203924/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 0.6 tf 0.4 2 tON 0.2 1 0.5 toff 0.2 ton 0.1 tr(V CE) tf 0.05 tr(VCE) 0 VCC=300V IC=200A VGE=15V T C=25C Resistive Load 5 Switching Time t (s) Switching Time t (s) VCC=300V RG=3.6 ( VGE=15V T C=25C Resistive Load tOFF 0.8 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 0 50 100 150 200 250 0.02 300 1 3 Collector Current IC (A) VCC=300V RG=3.6( VGE=15V T C=125C Inductive Load tOFF tON tf 0.1 100 Fig.10- Series Gate Impedance vs. Switching Time 10 tr(Ic) 0.01 VCC=300V IC=200A VGE=15V T C=125C Inductive Load 5 2 Switching Time t (s) Switching Time t (s) 1 30 Series Gate Impedance RG (( ) Fig.9- Collector Current vs. Switching Time 10 10 1 0.5 toff 0.2 ton 0.1 tf 0.05 tr(IC ) 0.001 0 50 100 150 200 250 0.02 300 1 3 Collector Current IC (A) Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss EOFF EON 8 ERR 4 50 100 150 200 250 300 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) VCC=300V RG=3.6( VGE=15V T C=125C Inductive Load 0 100 300 12 0 30 Series Gate Impedance RG (( ) 20 16 10 VCC=300V IC=200A VGE=15V T C=125C Inductive Load 100 EON 30 EOFF 10 ERR 3 1 1 Collector Current IC (A) 3 10 30 Series Gate Impedance RG (( ) 00 QS043-402-203925/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25C Fig.14- Reverse Recovery Characteristics (Typical) 1000 T C=125C Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 400 300 250 200 150 100 50 0 1 2 3 500 trr 200 100 50 IRrM 20 10 4 IF=200A T C=25C T C=125C 0 200 400 Forward Voltage VF (V) 600 800 1000 1200 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 1000 RG=3.6 ( , VGE=15V, T C<125C 500 200 Collector Current I C (A) 0 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 350 1 FRD 3x10 -1 1x10 IGBT -1 3x10 -2 1x10 -2 3x10 -3 T C=25C 1x10 -3 3x10 -4 10 -5 1 Shot Pulse 10-4 10-3 10 -2 10 -1 1 10 1 Time t (s) 00