IRF7413GPbF
VDSS = 30V
RDS(on) = 0.011Ω
HEXFET® Power MOSFET
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
l100% RG Tested
lLead-Free
lHalogen-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
07/10/09
SO-8
S
y
mbol Parameter Units
VDS Drain-to-Source Volta
g
e
VGS Gate-to-Source Volta
g
e
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A
IDM
P
u
l
se
d D
ra
i
n
C
urren
t
c
PD @TA = 25°C Power Dissipation W
Linear Derating Factor mW/°C
EAS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
g
enc
y
d
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
TJ, TSTG Junction and Storage Temperature Range °C
S
y
mbol Parameter T
y
pMaxUnits
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient
g
––– 50
V
2.5
Max
30
± 20
13
Thermal Resistance Ratings
Absolute Maximum Ratings
°C/W
9.2
5.0
0.02
260
-55 to +150
58
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PD - 96250
IRF7413GPbF
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Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L = 9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board
Rθ is measured at TJ approximately 90°C
Symbol Parameter Min Typ Max Units
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C
––– ––– 0.011
––– ––– 0.018
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V
gfs Forward Transconductance 10 ––– ––– S
––– ––– 12
––– ––– 25
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
QgTotal Gate Charge ––– 52 79
Qgs Gate-to-Source Charge ––– 6.1 9.2 nC
Qgd Gate-to-Drain ("Miller") Charge ––– 16 23
RGGate Resistance ––– ––– 3.7 Ω
td(on) Turn-On Delay Time ––– 8.6 –––
trRise Time ––– 50 –––
td(off) Turn-Off Delay Time ––– 52 ––– ns
tfFall Time ––– 46 –––
Ciss Input Capacitance ––– 1800 –––
Coss Output Capacitance ––– 680 –––
Crss Reverse Transfer Capacitance ––– 240 –––
Symbol Parameter Min. Typ. Max. Units
Continuous Source Current
(Body Diode) A
Pulsed Source Current
(
Bod
y
Diode
)
c
VSD Diode Forward Voltage ––– ––– 1.0 V
trr Reverse Recovery Time ––– 74 110 ns
Qrr Reverse Recovery Charge ––– 200 300 nC
ISM ––– ––– 58
IS
IDSS Drain-to-Source Leakage Current µA
IGSS
pF
3.1––––––
nA
ΩVGS = 4.5V, ID = 3.7A
f
Static Drain-to-Source On-Resistance VGS = 10V, ID = 7.3A
f
RDS(on)
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
MOSFET symbol
VDS = 10V, ID = 3.7A
ID = 7.3A
VDS = 24V
Conditions
RG = 2.0Ω, See Fig. 10
f
VGS = 0V
RG = 6.2 Ω
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
TJ = 25°C, IS = 7.3A, VGS = 0V
e
TJ = 25°C, IF = 7.3A
di/dt = 100A/µs
e
showing the
integral reverse
p-n junction diode.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
VGS = 10V, See Fig. 6 and 9
f
VDD = 15V
ID = 7.3A
VGS = -20V
VGS = 20V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
IRF7413GPbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 7.3A
D
IRF7413GPbF
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1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
2800
3200
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 102030405060
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 7.3A
V = 24V
V = 15V
D
DS
DS
1
10
100
0.4 1.2 2.0 2.8 3.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
IRF7413GPbF
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0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
IRF7413GPbF
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
3.3A
6.0A
7.3A
IRF7413GPbF
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Fig 13. For N-Channel HEXFETS
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Peak Diode Recovery dv/dt Test Circuit
IRF7413GPbF
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SO-8 Package Outline(Mosfet & Fetky)
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Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7413GPbF
www.irf.com 9
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2009
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/