Germanium Transistors Type Case on Maximum Ratings at 25C amb. Characteristics SPECIAL No. 3 3 FEATURES eo 3 |-_ hee fr Vee(sat) a c A IC ir ~ Vea | Vce | Ves | le | Prot Io | Min.| Max.) Ie Min. le lg Max. Vv Vv Vv A Ww mA mA Mc/s mA mA Vv NPN 2N388 TOS A 25 20 15 | 0-2 0-15 200 30; 1 5-090 _ _ _ General 2N388A TOS A 40 40 15 | 0-2 0-15 200 30 | 1 5-00 _ _ _ Purpose 2N1302 TOS A 25 25 | 0-3 0-15 10 20] 1 3-00 10 0-5 0-2 and Switching 2N1304 TOS A 25 25) 0-3 0-15 10 40 | 200 1 5-00 10 0-25 0-2 2N1306 TOS A 25 25 | 0-3 0-15 10 60 | 300 1 10-09 10 017 0-2 2N1308 TO5 A 25 25 | 03 0-15 10 80 | 1 15-00 10 0-13 0-2 PNP 26301 $o2 A 20 | 20 | -10! 03 0-2 | -1 30*| | -1 3-0 100 | -40 0-22 General 26302 s$o2 A 20 | 20 | -10] 03 02 | -1 45*) | -1 70 ~100 | --4-0 0-22 Purpose 26303 $02 A 30 | 30 10 | 03 02 | -1 30*; | -1 3-0 100 | 4-0 0-22 and Switching 26304 $02 A 30 | -20 | 10] 03 02 | ~-1 45*; | -1 70 100 | 4:0 0-22 26306 $02 A 20 10 | 0-3 0-2 -1 go*; | 1 12-0 100 | 4-0 0-20 2N1303 TO5 A 30 25 | 0:3 0-15 | 10 20; | -1 3-09 10 0:5 0-2 2N1305 TO5 A 30 25 | 03 0-15 | -10 40 | 200 | -1 5-00 -10 0-25 0-2 2N1307 TOS A 30 25 | 0:3 0-15 | 10 60 | 300 | 1 10-00 10 0-17 0-2 2N1309 TOS A 30 25 | 0:3 0-15 | 10 80} | -1 15-00 10 0-13 0-2 PNP 26308 $02 A ~20 ~20 10 | 0-3 0-20 | -1 50*; | -1 3-0 _ NF <5dB General 26309 $02 A 20 20 10 | 03 0-20 | -1 170*|} | -1 42-0 _ _ at 1 Ke/s Purpose 26371 so2 A 20 | 20 10 | 03 0-20 | 1 35*] 130*) 1 1-0 _ Amplifiers 26374 $02 A 20 | 20 10 | .03 0-20 ) -1 75*) 265*) 1 1:0 _ _ _ 26377 $o2 A 60 | 60 10) 0-3 0-20 | 250 15] |-1 1:0 _ 2N404 TOS5 A 25 24 12 | 0-1 0-15 24 24); | -1 4-0 24 1-0 0-2 2N404A TOS A 40 35 25 | 0-1 0-15 24 24; | -1 4-0 24 10 0-2 PNP 2N705 TO18 M 15 15 35 |0-05 0-30t | 10 25; | 10 $300 10 ~ 0-4 03 26104 High Speed 2N711 TO18 M 12 12 | 1-0 }0-05 0-30f | 10 20 | | ~10 +300 -10 05 0:5 Total switching time Switches 275nS 2N711A TO18 M 15 15 2-0] 0:05 | 0-30t} 10 25; | 10 $3009 | 10 ~0-4 05 26103 2N711B TO18 M 18 15 2-0] 0-10 | 0-15 | 10 30 | 150 | 10 150 10 0-4 0-25 26106 PNP GM290A TO18-2 EM 20 15 0-3} 0-05 | 0-075) 3 20; | -3 700 _ N.F.< 9dB at 800 Mc/s High GM378A TO18-2 EM ~20 15 0-3] 0-05 | 0-075) 3 20; |-3 400 _ _ N.F.< 5-5dB at 200 Mc/s Frequency TIXM103) TI-LINE P 12 10 0-3 0-02 | 0-04 2 10 | 250 2 1800 _ _ N.F.7dB max. at3 G/Cs Amplifiers TIXM104 | TI-LINE P 12 10 0-3 0-02 | 0-04 2 10 | 250 2 1400 _ _ _ N.F. 5:5 dB : max. at 1-5 Ge/s TIXM105 | TI-LINE P 12 10 0:3 0-02 | 0-04 2 10 |} 250 2 2200 _ _ N.F. 4-5 dB max. at15 Gc/s available in modified pellet-pak TIXM106 2N5043 TOT2 P 15 7 0:3 0-03 ; 0:03 3 15 | 150 3 1500 _ _ _ N.F. 2:5 dB max. at 400 Mc/s 2N5044 TO72 P 15 7 0-3 | 0-03 | 0-03 3 15 | 150 3 1000 N.F. 2-5 dB max, at 400 Mc/s Temperature range 65C to 125C. Specified in S-parameters Also available in modified pellet-pak as TIXM107/8 NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: Under here: Under fr: Under Dissipation: A Alloyed * hte o fhip + dissipation at Tcase = 25C D Diffused A thte E Epitaxial + typical G Grown M Mesa P - Planar The transistor types tabulated in pp 7-17 form the Texas Instruments Limited Preferred and Guidance list for new designs. In addition, the types listed overleaf are readily available. Omission of a type from the Preferred list does not imply that a limit has been set to the production life. 17